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IRF9540 MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: IRF9540

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: P

Gesamt-Verlustleistung (Pd): 150

Maximale Drain-Source-Spannung (Uds): 100

Maximale Gate-Source-Spannung (Ugs):

Maximaler Drainstrom (Id): 19

Höchste Sperrschichttemperatur (Tj), °C: 150

Anstiegszeit (tr):

Drain-Kapazität (Cd), pF:

Ausgangswiderstand (Rds), Ohm: 0.2

Transistorgehäuse: TO220AB

Ersatz (vergleichstyp) für IRF9540 Transistor

IRF9540 PDF doc:

1.1. irf9540_rf1s9540sm.pdf Size:99K _fairchild_semi

IRF9540
IRF9540

IRF9540, RF1S9540SM Data Sheet January 2002 19A, 100V, 0.200 Ohm, P-Channel Power Features MOSFETs • 19A, 100V These are P-Channel enhancement mode silicon gate power • rDS(ON) = 0.200Ω field effect transistors. They are advanced power MOSFETs • Single Pulse Avalanche Energy Rated designed, tested, and guaranteed to withstand a specified level of energy in the breakdown ava

1.2. irf9540s.pdf Size:321K _international_rectifier

IRF9540
IRF9540

PD - 95699 IRF9540SPbF Lead-Free 9/10/04 Document Number: 91079 www.vishay.com 1 IRF9540SPbF Document Number: 91079 www.vishay.com 2 IRF9540SPbF Document Number: 91079 www.vishay.com 3 IRF9540SPbF Document Number: 91079 www.vishay.com 4 IRF9540SPbF Document Number: 91079 www.vishay.com 5 IRF9540SPbF Document Number: 91079 www.vishay.com 6 IRF9540SPbF Peak Diode Recove

1.3. irf9540.pdf Size:926K _international_rectifier

IRF9540
IRF9540

PD - 94884 IRF9540PbF Lead-Free 12/11/03 Document Number: 91078 www.vishay.com 1 IRF9540PbF Document Number: 91078 www.vishay.com 2 IRF9540PbF Document Number: 91078 www.vishay.com 3 IRF9540PbF Document Number: 91078 www.vishay.com 4 IRF9540PbF Document Number: 91078 www.vishay.com 5 IRF9540PbF Document Number: 91078 www.vishay.com 6 IRF9540PbF TO-220AB Package Outlin

1.4. irf9540n.pdf Size:125K _international_rectifier

IRF9540
IRF9540

PD - 91437B IRF9540N HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = -100V 175C Operating Temperature Fast Switching RDS(on) = 0.117? P-Channel G Fully Avalanche Rated ID = -23A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Th

1.5. irf9540ns.pdf Size:286K _international_rectifier

IRF9540
IRF9540

PD - 91483D IRF9540NS/L HEXFET Power MOSFET l Advanced Process Technology D l Surface Mount (IRF9540S) VDSS = -100V l Low-profile through-hole (IRF9540L) l 175C Operating Temperature RDS(on) = 0.117? l Fast Switching G l P-Channel ID = -23A l Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achie

1.6. irfp9140-43_irf9540-43.pdf Size:378K _samsung

IRF9540
IRF9540



1.7. irf9540s_sihf9540s.pdf Size:172K _vishay

IRF9540
IRF9540

IRF9540S, SiHF9540S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 100 Surface Mount RDS(on) (?)VGS = - 10 V 0.20 Available in Tape and Reel Qg (Max.) (nC) 61 Dynamic dV/dt Rating Repetitive Avalanche Rated Qgs (nC) 14 P-Channel Qgd (nC) 29 175 C Operating Temperature Fast Switching Configurat

1.8. irf9540_sihf9540.pdf Size:202K _vishay

IRF9540
IRF9540

IRF9540, SiHF9540 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 100 Available Repetitive Avalanche Rated RDS(on) (?)VGS = - 10 V 0.20 RoHS* P-Channel COMPLIANT Qg (Max.) (nC) 61 175 C Operating Temperature Qgs (nC) 14 Fast Switching Qgd (nC) 29 Ease of Paralleling Configuration Single Simple Drive Requirements S Complia

1.9. irf9540_irf9541_irf9542_irf9543.pdf Size:352K _no

IRF9540
IRF9540

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Anderen MOSFET... IRF9530 , IRF9530N , APT5015BLC , IRF9530NL , IRF9530NS , IRF9531 , IRF9532 , IRF9533 , IRF640 , IRF9540N , IRF9540NL , IRF9540NS , IRF9541 , IRF9542 , IRF9543 , IRF9610 , IRF9610S .

 


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