IRFZ44N MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: IRFZ44N

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 83

Maximale Drain-Source-Spannung (Uds): 55V

Maximale Gate-Source-Spannung (Ugs): 10

Maximaler Drainstrom (Id): 41

Höchste Sperrschichttemperatur (Tj), °C: 150

Anstiegszeit (tr):

Drain-Kapazität (Cd), pF:

Ausgangswiderstand (Rds), Ohm: 0.024

Transistorgehäuse: TO220AB

Ersatz (vergleichstyp) für IRFZ44N Transistor

IRFZ44N - PDF-Dokument zum Download bereitstellen...

1.1. irfz44ns_1.pdf Size:57K _philips

ltage - - 55 V VDGR Drain-gate voltage RGS = 20 k? -55V ±VGS Gate-source voltage - - 20 V ID Drain current (DC) Tmb = 25 ?C - 49 A ID Drain current (DC) Tmb = 100 ?C - 35 A IDM Drain current (pulse peak value) Tmb = 25 ?C - 160 A Ptot Total power dissipation Tmb = 25 ?C - 110 W Tstg, Tj Storage & operating temperature - - 55 175 ?C ESD LIMITING VALUE SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VC Electrostatic discharge capacitor Human body model - 2 kV voltage, all pins (100 pF, 1.5 k

1.2. irfz44n_1.pdf Size:52K _philips

n-gate voltage RGS = 20 k? -55V ±VGS Gate-source voltage - - 20 V ID Drain current (DC) Tmb = 25 ?C - 49 A ID Drain current (DC) Tmb = 100 ?C - 35 A IDM Drain current (pulse peak value) Tmb = 25 ?C - 160 A Ptot Total power dissipation Tmb = 25 ?C - 110 W Tstg, Tj Storage & operating temperature - - 55 175 ?C ESD LIMITING VALUE SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VC Electrostatic discharge capacitor Human body model - 2 kV voltage, all pins (100 pF, 1.5 k?) THERMAL RESISTANCES

1.3. irfz44ns_1.pdf Size:57K _international_rectifier

ltage - - 55 V VDGR Drain-gate voltage RGS = 20 k? -55V ±VGS Gate-source voltage - - 20 V ID Drain current (DC) Tmb = 25 ?C - 49 A ID Drain current (DC) Tmb = 100 ?C - 35 A IDM Drain current (pulse peak value) Tmb = 25 ?C - 160 A Ptot Total power dissipation Tmb = 25 ?C - 110 W Tstg, Tj Storage & operating temperature - - 55 175 ?C ESD LIMITING VALUE SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VC Electrostatic discharge capacitor Human body model - 2 kV voltage, all pins (100 pF, 1.5 k

1.4. irfz44n_1.pdf Size:52K _international_rectifier

n-gate voltage RGS = 20 k? -55V ±VGS Gate-source voltage - - 20 V ID Drain current (DC) Tmb = 25 ?C - 49 A ID Drain current (DC) Tmb = 100 ?C - 35 A IDM Drain current (pulse peak value) Tmb = 25 ?C - 160 A Ptot Total power dissipation Tmb = 25 ?C - 110 W Tstg, Tj Storage & operating temperature - - 55 175 ?C ESD LIMITING VALUE SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VC Electrostatic discharge capacitor Human body model - 2 kV voltage, all pins (100 pF, 1.5 k?) THERMAL RESISTANCES

1.5. irfz44ns.pdf Size:151K _international_rectifier

connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRFZ44NL) is available for low- profile applications. Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 49 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 35 A IDM Pulsed Drain Current 160 PD @TA = 25°C Power Dissipation 3.8 W PD @TC = 25°C Power Dissipation 94 W Linear Derating Factor 0.63 W/°C VGS Gate-to-Source Vo

1.6. irfz44n.pdf Size:100K _international_rectifier

Continuous Drain Current, VGS @ 10V 49 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 35 A IDM Pulsed Drain Current 160 PD @TC = 25°C Power Dissipation 94 W Linear Derating Factor 0.63 W/°C VGS Gate-to-Source Voltage ± 20 V IAR Avalanche Current 25 A EAR Repetitive Avalanche Energy 9.4 mJ dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torque,

1.7. irfz44n.pdf Size:145K _inchange_semiconductor

METER MAX UNIT ?/W Rth j-c Thermal Resistance, Junction to Case 1.5 ?/W Rth j-a Thermal Resistance, Junction to Ambient 62 isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFZ44N ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA 55 V Gate Threshold Voltage VDS= VGS; ID= 0.25mA 2 4 V VGS(th) Drain-Source O

Anderen MOSET... IRFZ40 , IRFZ40FI , IRFZ42 , IRFZ44 , IRFZ44A , IRFZ44E , IRFZ44EL , IRFZ44ES , IRF5305 , IRFZ44NL , IRFZ44NS , IRFZ45 , IRFZ46N , IRFZ46NL , IRFZ46NS , IRFZ48N , IRFZ48NL .