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IRFZ48N MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: IRFZ48N

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 94

Maximale Drain-Source-Spannung (Uds): 55

Maximale Gate-Source-Spannung (Ugs): 10

Maximaler Drainstrom (Id): 53

Höchste Sperrschichttemperatur (Tj), °C: 150

Anstiegszeit (tr):

Drain-Kapazität (Cd), pF:

Ausgangswiderstand (Rds), Ohm: 0.016

Transistorgehäuse: TO220AB

Ersatz (vergleichstyp) für IRFZ48N Transistor

 

IRFZ48N PDF doc:

1.1. irfz48n_1.pdf Size:53K _philips

IRFZ48N
IRFZ48N

Philips Semiconductors Product specification N-channel enhancement mode IRFZ48N TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V trench technology. The device ID Drain current (DC) 64 A features very low on-state re

1.2. irfz48n.pdf Size:102K _international_rectifier

IRFZ48N
IRFZ48N

PD - 91406 IRFZ48N HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 55V Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 14m? Fast Switching G Fully Avalanche Rated ID = 64A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per sil

1.3. irfz48n_1.pdf Size:53K _international_rectifier

IRFZ48N
IRFZ48N

Philips Semiconductors Product specification N-channel enhancement mode IRFZ48N TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V trench technology. The device ID Drain current (DC) 64 A features very low on-state re

1.4. irfz48ns.pdf Size:131K _international_rectifier

IRFZ48N
IRFZ48N

PD - 9.1408B IRFZ48NS IRFZ48NL Advanced Process Technology HEXFET Power MOSFET Surface Mount (IRFZ48NS) Low-profile through-hole (IRFZ48NL) D 175C Operating Temperature VDSS = 55V Fast Switching Fully Avalanche Rated RDS(on) = 0.014? Description G Advanced HEXFET Power MOSFETs from ID = 64A International Rectifier utilize advanced processing S techniques to achieve extre

1.5. irfz48n.pdf Size:144K _inchange_semiconductor

IRFZ48N
IRFZ48N

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFZ48N FEATURES ·Drain Current –ID= 64A@ TC=25? ·Drain Source Voltage- : VDSS= 55V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.014?(Max) ·Fast Switching DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta

Anderen MOSFET... IRFZ44ES , IRFZ44N , IRFZ44NL , IRFZ44NS , IRFZ45 , IRFZ46N , IRFZ46NL , IRFZ46NS , BS170 , IRFZ48NL , IRFZ48NS , IRL1004 , IRL1004L , IRL1004S , IRL2203N , IRL2203NL , IRL2203NS .

 


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