IXFM12N90 MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: IXFM12N90

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd):

Maximale Drain-Source-Spannung (Uds): 900V

Maximale Gate-Source-Spannung (Ugs):

Maximaler Drainstrom (Id): 12

Höchste Sperrschichttemperatur (Tj), °C: 150

Anstiegszeit (tr):

Drain-Kapazität (Cd), pF:

Ausgangswiderstand (Rds), Ohm: 0.9

Transistorgehäuse: TO268

Ersatz (vergleichstyp) für IXFM12N90 Transistor

IXFM12N90 - PDF-Dokument zum Download bereitstellen...

1.1. ixfh10n90_ixfm10n90_ixfh12n90_ixfm12n90_ixfh13n90_ixfm13n90.pdf Size:179K _ixys

0 °C Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Md Mounting torque 1.13/10 Nm/lb.in. Unclamped Inductive Switching (UIS) Weight TO-204 = 18 g, TO-247 = 6 g rated Low package inductance - easy to drive and to protect Symbol Test Conditions Characteristic Values Fast intrinsic Rectifier (TJ = 25°C, unless otherwise specified) Applications min. typ. max. DC-DC converters Synchronous rectification VDSS VGS = 0 V, ID = 3 mA 900 V Batter

3.1. ixfh10n100_ixfm10n100_ixfh12n100_ixfm12n100.pdf Size:570K _ixys

gate cell structure Weight TO-204 = 18 g, TO-247 = 6 g Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic Rectifier Applications Symbol Test Conditions Characteristic Values DC-DC converters (TJ = 25°C, unless otherwise specified) Synchronous rectification min. typ. max. Battery chargers Switched-mode and resonant-mode VDSS VGS = 0 V, ID = 3 mA 1000 V power supplies VGS(th) VDS = VGS, ID = 4 mA 2.0

5.1. ixfh15n60_ixfh20n60_ixfm15n60_ixfm20n60.pdf Size:82K _ixys

/10 Nm/lb.in. • Low package inductance - easy to drive and to protect Weight TO-204 = 18 g, TO-247 = 6 g • Fast intrinsic Rectifier Applications Symbol Test Conditions Characteristic Values • DC-DC converters (TJ = 25°C, unless otherwise specified) • Synchronous rectification min. typ. max. • Battery chargers • Switched-mode and resonant-mode VDSS VGS = 0 V, ID = 250 mA 600 V power supplies • DC choppers VGS(th) VDS = VGS, ID = 4 mA 2.0 4.5 V • AC motor control IGSS VGS = ±20 V

5.2. ixfh13n50_ixfm13n50.pdf Size:82K _ixys

rive and to protect Fast intrinsic Rectifier Applications Symbol Test Conditions Characteristic Values DC-DC converters (TJ = 25°C, unless otherwise specified) Uninterruptible Power Supplies (UPS) min. typ. max. Battery chargers Switched-mode and resonant-mode VDSS VGS = 0 V, ID = 250 mA 500 V power supplies VGS(th) VDS = VGS, ID = 2.5 mA 2 4 V DC choppers Temperature and lighting controls IGSS VGS = ±20 VDC, VDS = 0 ±100 nA Low voltage relays IDSS VDS = 0.8 • VDSS TJ = 25°C 200

5.3. ixfh11n80_ixfh13n80_ixfm11n80_ixfm13n80.pdf Size:95K _ixys

/10 Nm/lb.in. • Low package inductance Weight TO-204 = 18 g, TO-247 = 6 g - easy to drive and to protect • Fast intrinsic Rectifier Applications • DC-DC converters Symbol Test Conditions Characteristic Values • Synchronous rectification (TJ = 25°C, unless otherwise specified) • Battery chargers min. typ. max. • Switched-mode and resonant-mode power supplies VDSS VGS = 0 V, ID = 3 mA 800 V • DC choppers VGS(th) VDS = VGS, ID = 4 mA 2.0 4.5 V • AC motor control IGSS VGS = ±20 VDC

Anderen MOSET... IXFK80N20Q , IXFK90N20 , IXFK90N20Q , IXFK90N30 , IXFM10N100 , IXFM10N90 , IXFM11N80 , IXFM12N100 , BSS138 , IXFM12N90Q , IXFM13N50 , IXFM13N80 , IXFM14N80 , IXFM15N60 , IXFM15N80 , IXFM20N60 , IXFM21N50 .