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IXTM20N60
MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt. Typenbezeichnung: IXTM20N60
Typ von Feldeffekttransistors: MOSFET
Kanaltyp: N
Gesamt-Verlustleistung (Pd):
Maximale Drain-Source-Spannung (Uds): 600V
Maximale Gate-Source-Spannung (Ugs):
Maximaler Drainstrom (Id): 20
Höchste Sperrschichttemperatur (Tj), °C: 150
Anstiegszeit (tr):
Drain-Kapazität (Cd), pF:
Ausgangswiderstand (Rds), Ohm: 0.35
Transistorgehäuse: TO204
Ersatz (vergleichstyp) für IXTM20N60
Transistor IXTM20N60
- PDF-Dokument zum Download bereitstellen...
1.1. ixth20n60_ixtm20n60.pdf  Size:105K _ixys  |
 | se specified)
Switch-mode and resonant-mode
min. typ. max.
power supplies
Motor control
VDSS VGS = 0 V, ID = 250 µA 600 V
Uninterruptible Power Supplies (UPS)
VGS(th) VDS = VGS, ID = 250 µA 2 4.5 V
DC choppers
IGSS VGS = ±20 VDC, VDS = 0 ±100 nA
Advantages
IDSS VDS = 0.8 • VDSS TJ = 25°C 200 µA
VGS = 0 V TJ = 125°C1 mA
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
RDS(on) VGS = 10 V, ID = 0.5 ID25 0.35 ?
Space savings
Pulse test, t ? 300 µs, duty cycle d ? |
5.1. ixth21n50_ixth24n50_ixtm21n50_ixtm24n50.pdf Size:108K _ixys  |
 | TJ = 25°C, unless otherwise specified)
Applications
min. typ. max.
Switch-mode and resonant-mode
power supplies
VDSS VGS = 0 V, ID = 250 µA 500 V
Motor controls
VGS(th) VDS = VGS, ID = 250 µA2 4 V
Uninterruptible Power Supplies (UPS)
DC choppers
IGSS VGS = ±20 VDC, VDS = 0 ±100 nA
IDSS VDS = 0.8 • VDSS TJ = 25°C 200 µA
Advantages
VGS = 0 V TJ = 125°C1 mA
Easy to mount with 1 screw (TO-247)
RDS(on) VGS = 10 V, ID = 0.5 ID25 21N50 0.25 ?
(isolated mounting screw hole)
24N50 0.23 |
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.
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