J109 MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: J109

Typ von Feldeffekttransistors: FET

Kanaltyp: N

Gesamt-Verlustleistung (Pd):

Maximale Drain-Source-Spannung (Uds): 25V

Maximale Gate-Source-Spannung (Ugs):

Maximaler Drainstrom (Id): 0.04

Höchste Sperrschichttemperatur (Tj), °C: 150

Anstiegszeit (tr):

Drain-Kapazität (Cd), pF: 15

Ausgangswiderstand (Rds), Ohm: 12

Transistorgehäuse: TO92

Ersatz (vergleichstyp) für J109 Transistor

J109 - PDF-Dokument zum Download bereitstellen...

1.1. j108_j109_j110_1.pdf Size:45K _philips

5 V VGSoff gate-source cut-off voltage ID =1 µA; VDS =5V J108 -3 -10 V J109 -2 -6 V J110 -0.5 -4 V IDSS drain current VGS = 0; VDS =5V J108 80 - mA J109 40 - mA J110 10 - mA Ptot total power dissipation up to Tamb =50 °C - 400 mW 1996 Jul 30 2 Philips Semiconductors Product specification N-channel silicon junction FETs J108; J109; J110 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source volt

1.2. j108-j109-j110.pdf Size:34K _philips

5 V VGSoff gate-source cut-off voltage ID =1 µA; VDS =5V J108 -3 -10 V J109 -2 -6 V J110 -0.5 -4 V IDSS drain current VGS = 0; VDS =5V J108 80 - mA J109 40 - mA J110 10 - mA Ptot total power dissipation up to Tamb =50 °C - 400 mW 1996 Jul 30 2 Philips Semiconductors Product specification N-channel silicon junction FETs J108; J109; J110 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source volt

1.3. pmbfj108_pmbfj109_pmbfj110_cnv_2.pdf Size:32K _philips2

O drain-drain voltage - -25 V IG forward gate current 50 mA (DC) Ptot total power dissipation Tamb =25°C; - 250 mW note 1 Tstg storage temperature -65 150 °C Tj operating junction - 150 °C temperature April 1995 2 Philips Semiconductors Product specification PMBFJ108; N-channel junction FETs PMBFJ109; PMBFJ110 THERMAL RESISTANCE SYMBOL PARAMETER VALUE UNIT Rth j-a from junction to ambient (note 1) 500 K/W Notes 1. Mounted on an FR-4 printboard. STATIC CHARACTERISTICS Tj =25°C

1.4. pmbfj108_pmbfj109_pmbfj110.pdf Size:46K _philips2

in Hong Kong * = t: Made in Malaysia * = W: Made in China 5. Limiting values Table 4: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC) - ±25 V VGSO gate-source voltage - -25 V VGDO gate-drain voltage - -25 V IG forward gate current (DC) - 50 mA [1] Ptot total power dissipation Tamb =25°C - 250 mW Tstg storage temperature -65 +150 °C Tj junction temperature - 150 °C [1] Mounted

1.5. 2sj109.pdf Size:242K _toshiba

1.6. ssm3j109tu.pdf Size:205K _toshiba

ature/current/voltage, etc.) are within the JEITA ? absolute maximum ratings. Please design the appropriate reliability upon reviewing the TOSHIBA 2-2U1A Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual Weight: 6.6 mg (typ.) reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on a ceramic board (25.4 mm ? 25.4 mm ? 0.8 t, Cu Pad: 645 mm2) Note 2: Mounted on an FR4

1.7. j108_j109_j110_mmbfj108.pdf Size:129K _fairchild_semi

Gate-Source Breakdwon Voltage IG = -10µA, VDS = 0 -25 V IGSS Gate Reverse Current VGS = -15V, VDS = 0 -3.0 nA VGS = -15V, VDS = 0, TA = 100°C -200 nA VGS(off) Gate-Source Cutoff Voltage VDS = 15V, ID = 10nA 108 -3.0 -10 V 109 -2.0 -6.0 V 110 -0.5 -4.0 V On Characteristics IDSS Zero-Gate Voltage Drain Current * VDS = 15V, IGS = 0 108 80 mA 109 40 mA 110 10 mA rDS(on) Drain-Source On Resistance VDS ? 0.1V, VGS = 0 108 8.0 ? 109 12 ? 110 18 ? Small Signal Characteristics Cdg(on) Drai

1.8. j108_j109_j110_sst108_sst109_sst110.pdf Size:50K _vishay

bly (see Packaging Information). For similar products packaged in TO-206AC (TO-52), see the 2N5432/5433/5434 data The SST108 series is comprised of surface-mount sheet. devices featuring the lowest rDS(on) of any TO-236 (SOT-23) JFET device. TO-226AA TO-236 (TO-92) (SOT-23) D 1 1 D 3 G S 2 S 2 G 3 Top View SST108 (I8)* SST109 (I9)* SST110 (I0)* Top View *Marking Code for TO-236 J108, J109, J110 Document Number: 70231 www.vishay.com S-04028—Rev. E, 04-Jun-01 7-1 J/S

Anderen MOSET... IXTZ27N40MB , IXTZ35N25MA , IXTZ35N25MB , IXTZ42N20MA , IXTZ42N20MB , IXTZ67N10MA , IXTZ67N10MB , J108 , IRF540N , J110 , J111 , J112 , J113 , J211 , J212 , JANSR2N7272 , JANSR2N7275 .