NDP6020P
MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt. Typenbezeichnung: NDP6020P
Typ von Feldeffekttransistors: MOSFET
Kanaltyp: P
Gesamt-Verlustleistung (Pd): 60
Maximale Drain-Source-Spannung (Uds): 20V
Maximale Gate-Source-Spannung (Ugs):
Maximaler Drainstrom (Id): 24
Höchste Sperrschichttemperatur (Tj), °C: 150
Anstiegszeit (tr):
Drain-Kapazität (Cd), pF:
Ausgangswiderstand (Rds), Ohm: 0.05
Transistorgehäuse: TO220
Ersatz (vergleichstyp) für NDP6020P
Transistor NDP6020P
- PDF-Dokument zum Download bereitstellen...
1.1. ndp6020p_ndb6020p.pdf  Size:62K _fairchild_semi  |
 | rcuits where fast switching, low in-line power loss, and
resistance to transients are needed.
High density cell design for extremely low RDS(ON).
TO-220 and TO-263 (D2PAK) package for both through
hole and surface mount applications.
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Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol Parameter NDP6020P NDB6020P Units
VDSS Drain-Source Voltage -20 V
VGSS Gate-Source Voltage - Continuo |
5.1. ndp6030pl_ndb6030pl.pdf Size:56K _fairchild_semi  |
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Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol Parameter NDP6030PL NDB6030PL Units
VDSS Drain-Source Voltage -30 V
VGSS Gate-Source Voltage - Continuous ±16 V
ID Drain Current - Continuous -30 A
- Pulsed -90
PD Total Power Dissipation @ TC = 25°C 75 W
Derate above 25°C 0.5
TJ,TSTG Operating and Storage Temperature Range -65 to 175 °C
TL Maximum lead temperature for soldering purposes, 275 °C
1/8" from case for 5 seconds
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5.2. ndp6060l_ndb6060l.pdf Size:360K _fairchild_semi 5.3. ndp6060_ndb6060.pdf Size:360K _fairchild_semi Anderen MOSET... NDP4060L
, NDP408A
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, NDP6020
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, NDP6030L
, NDP6030PL
, NDP603AL
, NDP6050
, NDP6050L
, NDP6051
, NDP6051L
.
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