PHP10N10E MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: PHP10N10E

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 60

Maximale Drain-Source-Spannung (Uds): 100V

Maximale Gate-Source-Spannung (Ugs):

Maximaler Drainstrom (Id): 5.5

Höchste Sperrschichttemperatur (Tj), °C: 150

Anstiegszeit (tr):

Drain-Kapazität (Cd), pF:

Ausgangswiderstand (Rds), Ohm: 0.25

Transistorgehäuse: SOT78

Ersatz (vergleichstyp) für PHP10N10E Transistor

PHP10N10E - PDF-Dokument zum Download bereitstellen...

1.1. php10n10e_1.pdf Size:56K _philips2

rrent (DC) Tmb = 100 ?C - 7.7 A IDM Drain current (pulse peak value) Tmb = 25 ?C - 44 A Ptot Total power dissipation Tmb = 25 ?C - 60 W Tstg Storage temperature - - 55 175 ?C Tj Junction Temperature - - 175 ?C THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Rth j-mb Thermal resistance junction to - - 2.5 K/W mounting base Rth j-a Thermal resistance junction to - 60 - K/W ambient September 1997 1 Rev 1.000 Philips Semiconductors Product Specification PowerMOS tr

4.1. php10n40_1.pdf Size:53K _philips2

A IDM Pulsed drain current Tmb = 25 ?C - 43 A PD Total dissipation Tmb = 25 ?C - 147 W ?PD/?Tmb Linear derating factor Tmb > 25 ?C - 1.176 W/K VGS Gate-source voltage - ± 30 V EAS Single pulse avalanche VDD ? 50 V; starting Tj = 25?C; RGS = 50 ?; - 520 mJ energy VGS = 10 V IAS Peak avalanche current VDD ? 50 V; starting Tj = 25?C; RGS = 50 ?; - 10 A VGS = 10 V Tj, Tstg Operating junction and - 55 150 ?C storage temperature range THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. T

5.1. php1025_1.pdf Size:51K _philips2

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage (DC) --12 V VSD source-drain diode forward voltage IS = -1.25 A; VGD =0 --1.3 V VGSO gate-source voltage (DC) open drain -±8 V VGSth gate-source threshold voltage ID = -1 mA; VDS =VGS -0.4 - V ID drain current (DC) Ts =80°C --10 A RDSon drain-source on-state resistance ID = -5 A; VGS = -2.5 V - 25 m? Ptot total power dissipation Ts =80°C - 4W 1998 Feb 18 2 Philips Semiconductors Objective specification P-channel enhan

5.2. php1035_1.pdf Size:51K _philips2

METER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage (DC) --30 V VSD source-drain diode forward voltage IS = -1.25 A; VGD =0 --1.3 V VGSO gate-source voltage (DC) open drain -±20 V VGSth gate-source threshold voltage ID = -1 mA; VDS =VGS -1 - V ID drain current (DC) Ts =80°C --8 A RDSon drain-source on-state resistance ID = -4 A; VGS = -10 V - 35 m? Ptot total power dissipation Ts =80°C - 4W 1998 Feb 18 2 Philips Semiconductors Preliminary specification P-channel enhancement mode

5.3. php101nq04t_phb101nq04t.pdf Size:94K _philips2

FET 3. Ordering information Table 2: Ordering information Type number Package Name Description Version PHP101NQ04T TO-220AB Plastic single-ended package; heatsink mounted; 1 mounting hole; 3 leads SOT78 PHB101NQ04T D2-PAK Plastic single-ended surface mounted package; 3 leads (one lead cropped) SOT404 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC) 25 °

5.4. php101nq03lt_phu101nq03lt.pdf Size:91K _philips2

e; SOT78 3-lead TO-220AB PHU101NQ03LT IPAK plastic single-ended package; 3 leads (in-line) SOT533 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage 25 °C ? Tj ? 175 °C - 30 V VDGR drain-gate voltage (DC) 25 °C ? Tj ? 175 °C; RGS =20k? -30 V VGS gate-source voltage - ±20 V VGSM peak gate-source voltage tp ? 50 µs; pulsed; duty cycle = 25 %; Tj ? 150 °C - ±25 V

5.5. php109_2.pdf Size:81K _philips2

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage (DC) --30 V VSD source-drain diode forward voltage IS = -1.25 A --1.3 V VGS gate-source voltage (DC) -±20 V VGSth gate-source threshold voltage ID = -1 mA; VDS =VGS -1 -2.8 V ID drain current (DC) Ts =80°C --5 A RDSon drain-source on-state resistance ID = -2.5 A; VGS = -10 V - 0.09 ? Ptot total power dissipation Ts =80°C - 4W 1997 Jun 18 2 Philips Semiconductors Product specification P-channel enhancement mode PHP1

Anderen MOSET... PHD2N60E , PHD3055E , PHD3N40E , PHD45N03LT , PHD50N03LT , PHD55N03LT , PHD69N03LT , PHD6N10E , J111 , PHP10N60E , PHP11N50E , PHP125N06LT , PHP12N10E , PHP130N03LT , PHP18N20E , PHP21N06LT , PHP2N50E .