PHP125N06LT MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: PHP125N06LT

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 250

Maximale Drain-Source-Spannung (Uds): 55V

Maximale Gate-Source-Spannung (Ugs):

Maximaler Drainstrom (Id): 25

Höchste Sperrschichttemperatur (Tj), °C: 150

Anstiegszeit (tr):

Drain-Kapazität (Cd), pF:

Ausgangswiderstand (Rds), Ohm: 0.008

Transistorgehäuse: SOT78

Ersatz (vergleichstyp) für PHP125N06LT Transistor

PHP125N06LT - PDF-Dokument zum Download bereitstellen...

1.1. php125n06lt_4.pdf Size:58K _philips2

ith the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDSS Drain-source voltage Tj = 25 ?C to 175?C - 55 V VDGR Drain-gate voltage Tj = 25 ?C to 175?C; RGS = 20 k? -55 V VGS Gate-source voltage - ± 13 V ID Continuous drain current Tmb = 25 ?C - 75 A Tmb = 100 ?C - 75 A IDM Pulsed drain current Tmb = 25 ?C - 240 A PD Total power dissipation Tmb = 25 ?C - 250 W Tj, Tstg Operating junction and - 55 175 ?C storage temperature March 1998 1 Rev 1.400 Philips

1.2. php125n06t_1.pdf Size:51K _philips2

= 20 k? -55V ±VGS Gate-source voltage - - 20 V ID Drain current (DC)1 Tmb = 25 ?C - 75 A ID Drain current (DC)1 Tmb = 100 ?C - 75 A IDM Drain current (pulse peak value) Tmb = 25 ?C - 240 A Ptot Total power dissipation Tmb = 25 ?C - 250 W Tstg, Tj Storage & operating temperature - - 55 175 ?C ESD LIMITING VALUE SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VC Electrostatic discharge capacitor Human body model - 2 kV voltage, all pins (100 pF, 1.5 k?) 1 Current limited by package to 75A fr

4.1. php125_3.pdf Size:85K _philips2

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage (DC) --30 V VSD source-drain diode forward voltage IS = -1.25 A --1.6 V VGS gate-source voltage (DC) -±20 V VGSth gate-source threshold voltage ID = -1 mA; VDS =VGS -1 -2.8 V ID drain current (DC) Ts =80 °C --2.5 A RDSon drain-source on-state resistance ID = -1 A; VGS = -10 V - 0.25 ? Ptot total power dissipation Ts =80 °C - 2.8 W 1997 Jun 18 2 Philips Semiconductors Product specification P-channel enhancement mode

Anderen MOSET... PHD45N03LT , PHD50N03LT , PHD55N03LT , PHD69N03LT , PHD6N10E , PHP10N10E , PHP10N60E , PHP11N50E , IRL3803 , PHP12N10E , PHP130N03LT , PHP18N20E , PHP21N06LT , PHP2N50E , PHP2N60E , PHP3055E , PHP3055L .