PHP42N03LT
MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt. Typenbezeichnung: PHP42N03LT
Typ von Feldeffekttransistors: MOSFET
Kanaltyp: N
Gesamt-Verlustleistung (Pd): 86
Maximale Drain-Source-Spannung (Uds): 30V
Maximale Gate-Source-Spannung (Ugs):
Maximaler Drainstrom (Id): 25
Höchste Sperrschichttemperatur (Tj), °C: 150
Anstiegszeit (tr):
Drain-Kapazität (Cd), pF:
Ausgangswiderstand (Rds), Ohm: 0.026
Transistorgehäuse: SOT78
Ersatz (vergleichstyp) für PHP42N03LT
Transistor PHP42N03LT
- PDF-Dokument zum Download bereitstellen...
1.1. php42n03lt_4.pdf  Size:51K _philips2  |
 | he Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDSS Drain-source voltage Tj = 25 ?C to 175?C - 30 V
VDGR Drain-gate voltage Tj = 25 ?C to 175?C; RGS = 20 k? -30 V
VGS Gate-source voltage - ± 15 V
ID Continuous drain current Tmb = 25 ?C; VGS = 5 V - 42 A
Tmb = 100 ?C; VGS = 5 V - 30 A
IDM Pulsed drain current Tmb = 25 ?C - 168 A
PD Total power dissipation Tmb = 25 ?C - 86 W
Tj, Tstg Operating junction and - 55 175 ?C
storage temperature
November 1998 1 |
2.1. php42n03t_1.pdf Size:50K _philips2  |
 | 20 k? -30V
±VGS Gate-source voltage - - 20 V
ID Drain current (DC) Tmb = 25 ?C - 42 A
ID Drain current (DC) Tmb = 100 ?C - 33 A
IDM Drain current (pulse peak value) Tmb = 25 ?C - 168 A
Ptot Total power dissipation Tmb = 25 ?C - 86 W
Tstg, Tj Storage & operating temperature - - 55 175 ?C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Rth j-mb Thermal resistance junction to - - 1.75 K/W
mounting base
Rth j-a Thermal resistance junction to in free air 60 - K/W
ambient
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