FDG6335N MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: FDG6335N

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd):

Maximale Drain-Source-Spannung (Uds): 20V

Maximale Gate-Source-Spannung (Ugs):

Maximaler Drainstrom (Id): 0.7

Höchste Sperrschichttemperatur (Tj), °C:

Anstiegszeit (tr):

Drain-Kapazität (Cd), pF:

Ausgangswiderstand (Rds), Ohm: 0.3

Transistorgehäuse: SC70

Ersatz (vergleichstyp) für FDG6335N Transistor

FDG6335N - PDF-Dokument zum Download bereitstellen...

1.1. fdg6335n.pdf Size:66K _fairchild_semi

ge 20 V VGSS Gate-Source Voltage ± 12 V ID Drain Current – Continuous (Note 1) 0.7 A – Pulsed 2.1 PD Power Dissipation for Single Operation (Note 1) 0.3 W TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics R?JA Thermal Resistance, Junction-to-Ambient (Note 1) 415 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .35 FDG6335N 7’’ 8mm 3000 units ©2001 Fairchild Semiconductor Corporation FDG6335

4.1. fdg6332c.pdf Size:93K _fairchild_semi

um Ratings TA=25oC unless otherwise noted Symbol Parameter Q1 Q2 Units VDSS Drain-Source Voltage 20 –20 V VGSS Gate-Source Voltage ±12 ±12 V ID Drain Current – Continuous (Note 1) 0.7 –0.6 A – Pulsed 2.1 –2 PD Power Dissipation for Single Operation (Note 1) 0.3 W TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics °C/W R?JA Thermal Resistance, Junction-to-Ambient (Note 1) 415 Package Marking and Ordering Information Device Marking Device R

5.1. fdg6303n.pdf Size:414K _fairchild_semi

hangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device. Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter FDG6303N Units VDSS Drain-Source Voltage 25 V - 0.5 to +8 VGSS Gate-Source Voltage V ID Drain/Output Current - Continuous 0.5 A - Pulsed 1.5 PD Maximum Power Dissipation (Note 1) 0.3 W TJ,TSTG Operating and Storage Temperature Range -55 to 150 °C ESD Electrostatic Discharge Rating MIL-STD-883D

5.2. fdg6320c.pdf Size:73K _fairchild_semi

l). SC70-6 SOT-8 SO-8 SOT-23 SuperSOTTM-6 SOIC-14 S2 6 1 G2 D1 2 D2 G1 3 4 pin 1 S1 SC70-6 Absolute Maximum Ratings TA = 25oC unless other wise noted Symbol Parameter N-Channel P-Channel Units Drain-Source Voltage -25 V 25 VDSS VGSS Gate-Source Voltage 8 -8 V ID Drain Current - Continuous 0.22 -0.14 A - Pulsed 0.65 -0.4 PD Maximum Power Dissipation (Note 1) 0.3 W TJ,TSTG Operating and Storage Temperature Ranger -55 to 150 °C ESD Electrostatic Discharge Rating MIL-STD-

5.3. fdg6322c.pdf Size:669K _fairchild_semi

SC70-6 SOT-8 SO-8 SOT-23 SuperSOTTM-6 SOIC-14 S2 6 1 6 G2 Q1 D1 2 D2 Q2 G1 pin 1 3 4 S1 SC70-6 Mark: .22 Absolute Maximum Ratings TA = 25oC unless other wise noted Symbol Parameter N-Channel P-Channel Units Drain-Source Voltage 25 -25 V VDSS VGSS Gate-Source Voltage 8 -8 V ID Drain Current - Continuous 0.22 -0.41 A - Pulsed 0.65 -1.2 PD Maximum Power Dissipation (Note 1) 0.3 W TJ,TSTG Operating and Storage Temperature Range -55 to 150 °C ESD Electrostatic Discharge R

5.4. fdg6306p.pdf Size:61K _fairchild_semi

(Note 1) –0.6 A D – Pulsed –2.0 P Power Dissipation for Single Operation (Note 1) 0.3 W D T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1) 415 °C/W ?JA Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .06 FDG6306P 7’’ 8mm 3000 units ©2001 Fairchild Semiconductor Corporation FDG6306P Rev C(W) FDG6306P Electrical Characteristi

5.5. fdg6318p.pdf Size:123K _fairchild_semi

e Voltage –20 V VGSS Gate-Source Voltage ±12 V ID Drain Current – Continuous (Note 1) –0.5 A – Pulsed –1.8 PD Power Dissipation for Single Operation (Note 1) 0.3 W TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics R?JA Thermal Resistance, Junction-to-Ambient (Note 1) 415 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .38 FDG6318P 7’’ 8mm 3000 units ©2003 Fairchild Semiconductor Cor

5.6. fdg6302p.pdf Size:179K _fairchild_semi

rchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device. Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter FDG6302P Units VDSS Drain-Source Voltage -25 V VGSS Gate-Source Voltage -8 V ID Drain/Output Current - Continuous -0.14 A - Pulsed -0.4 PD Maximum Power Dissipation (Note 1) 0.3 W TJ,TSTG Operating and Storage Temperature Range -55 to 150 °C ESD Electrostatic Discharge Rating MIL-STD-883D 6.0 k

5.7. fdg6317nz.pdf Size:344K _fairchild_semi

e Voltage 20 V VGSS Gate-Source Voltage ± 12 V ID Drain Current – Continuous (Note 1) 0.7 A – Pulsed 2.1 PD Power Dissipation for Single Operation (Note 1) 0.3 W TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics R?JA Thermal Resistance, Junction-to-Ambient (Note 1) 415 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .67 FDG6317NZ 7’’ 8mm 3000 units ©2009 Fairchild Semiconductor Corporation

5.8. fdg6301n_f085.pdf Size:346K _fairchild_semi

re symmetrical; pin 1 and 4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device. Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter FDG6301N_F085 Units VDSS Drain-Source Voltage 25 V VGSS Gate-Source Voltage 8 V ID Drain/Output Current - Continuous 0.22 A - Pulsed 0.65 PD Maximum Power Dissipation (Note 1) 0.3 W TJ,TSTG Operating and Storage Temperature Range -55 to 150 °C ESD Electrostat

5.9. fdg6304p.pdf Size:104K _fairchild_semi

changeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device. Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter FDG6304P Units VDSS Drain-Source Voltage -25 V VGSS Gate-Source Voltage -8 V ID Drain/Output Current - Continuous -0.41 A - Pulsed -1.5 PD Maximum Power Dissipation (Note 1) 0.3 W TJ,TSTG Operating and Storage Temperature Range -55 to 150 °C ESD Electrostatic Discharge Rating MIL-STD-883D 6.0 kV

5.10. fdg6321c.pdf Size:72K _fairchild_semi

). SC70-6 SOT-23 SuperSOTTM-6 SOT-8 SO-8 SOIC-14 S2 6 1 G2 D1 2 D2 G1 3 4 S1 SC70-6 Absolute Maximum Ratings TA = 25oC unless otherwise noted Symbol Parameter N-Channel P-Channel Units VDSS Drain-Source Voltage 25 -25 V VGSS Gate-Source Voltage 8 -8 V ID Drain Current - Continuous 0.5 -0.41 A - Pulsed 1.5 -1.2 PD Maximum Power Dissipation (Note 1) 0.3 W TJ,TSTG Operating and Storage Temperature Ranger -55 to 150 °C ESD Electrostatic Discharge Rating MIL-STD-883D 6 kV Hum

5.11. fdg6308p.pdf Size:85K _fairchild_semi

le Operation (Note 1) 0.3 W TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics R?JA Thermal Resistance, Junction-to-Ambient (Note 1) 415 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .08 FDG6308P 7’’ 8mm 3000 units ©2000 Fairchild Semiconductor Corporation FDG6308P Rev B(W) FDG6308P Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Un

5.12. fdg6301n.pdf Size:103K _fairchild_semi

e. Units inside the carrier can be of either orientation and will not affect the functionality of the device. Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter FDG6301N Units VDSS Drain-Source Voltage 25 V VGSS Gate-Source Voltage 8 V ID Drain/Output Current - Continuous 0.22 A - Pulsed 0.65 PD Maximum Power Dissipation (Note 1) 0.3 W TJ,TSTG Operating and Storage Temperature Range -55 to 150 °C ESD Electrostatic Discharge Rating MIL-STD-883D 6.0 kV Human Body

5.13. fdg6316p.pdf Size:149K _fairchild_semi

ion for Single Operation (Note 1) 0.3 W TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics R?JA Thermal Resistance, Junction-to-Ambient (Note 1) 415 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .16 FDG6316P 7’’ 8mm 3000 units ©2001 Fairchild Semiconductor Corporation FDG6316P Rev D W) FDG6316P Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Condit

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