FDMA1032CZ MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: FDMA1032CZ

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd):

Maximale Drain-Source-Spannung (Uds): 20V

Maximale Gate-Source-Spannung (Ugs):

Maximaler Drainstrom (Id): 3.7

Höchste Sperrschichttemperatur (Tj), °C:

Anstiegszeit (tr):

Drain-Kapazität (Cd), pF:

Ausgangswiderstand (Rds), Ohm: 0.068

Transistorgehäuse: MicroFET

Ersatz (vergleichstyp) für FDMA1032CZ Transistor

FDMA1032CZ - PDF-Dokument zum Download bereitstellen...

1.1. fdma1032cz.pdf Size:374K _fairchild_semi

mpounds and antimony oxides PIN 1 S1 G1 D2 1 6 D1 S1 D1 D2 2 5 G1 G2 3 4 D2 S2 D1 G2 S2 MicroFET 2x2 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Q1 Q2 Units VDS Drain-Source Voltage 20 –20 V VGS Gate-Source Voltage ±12 ±12 V A Drain Current – Continuous (Note 1a) 3.7 –3.1 ID – Pulsed 6 –6 PD Power Dissipation for Single Operation (Note 1a) 1.4 W (Note 1b) 0.7 TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C The

4.1. fdma1027pt.pdf Size:379K _fairchild_semi

PIN 1 S1 G1 D2 1 6 S1 D1 D1 D2 5 G2 G1 2 D2 4 S2 3 D1 G2 S2 MicroFET 2X2 Thin MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol Parameter Ratings Units VDS Drain to Source Voltage -20 V VGS Gate to Source Voltage ±8 V ID Drain Current -Continuous TA = 25 °C (Note 1a) -3 A -Pulsed -6 Power Dissipation for Single Operation TA = 25 °C (Note 1a) 1.4 PD W Power Dissipation for Single Operation TA = 25 °C (Note 1b) 0.7 TJ, TSTG Operating and Storage Junction Temperatu

4.2. fdma1029pz.pdf Size:256K _fairchild_semi

um Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings Units VDS Drain-Source Voltage –20 V VGS Gate-Source Voltage 12 V A Drain Current – Continuous (Note 1a) –3.1 ID – Pulsed –6 PD Power Dissipation for Single Operation (Note 1a) 1.4 W (Note 1b) 0.7 TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 C Thermal Characteristics R JA Thermal Resistance, Junction-to-Ambient (Note 1a) 86 (Single Operation) R JA Thermal Resistance, Junction-t

4.3. fdma1024nz.pdf Size:402K _fairchild_semi

2 2 G2 G1 5 D2 3 S2 4 D1 G2 S2 MicroFET 2x2 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol Parameter Ratings Units VDS Drain to Source Voltage 20 V VGS Gate to Source Voltage ±8 V Drain Current -Continuous (Note 1a) 5.0 ID A -Pulsed 6.0 Power Dissipation (Note 1a) 1.4 PD W Power Dissipation (Note 1b) 0.7 TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics R?JA Thermal Resistance, Junction to Ambient (Note 1a) 86 (S

4.4. fdma1025p.pdf Size:339K _fairchild_semi

gs TA = 25°C unless otherwise noted Symbol Parameter Ratings Units VDS Drain to Source Voltage –20 V VGS Gate to Source Voltage ±12 V Drain Current -Continuous (Note 1a) –3.1 ID A -Pulsed –6 Power Dissipation for Single Operation (Note 1a) 1.4 PD W Power Dissipation (Note 1b) 0.7 TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics R?JA Thermal Resistance Single Operation, Junction to Ambient (Note 1a) 86 R?JA Thermal Resistance Single Op

4.5. fdma1028nz.pdf Size:321K _fairchild_semi

Gate-Source Voltage ±12 V A Drain Current – Continuous (Note 1a) 3.7 ID – Pulsed 6 PD Power Dissipation for Single Operation (Note 1a) 1.4 W (Note 1b) 0.7 TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics R?JA Thermal Resistance, Junction-to-Ambient (Note 1a) 86 (Single Operation) R?JA Thermal Resistance, Junction-to-Ambient (Note 1b) 173 (Single Operation) °C/W R?JA Thermal Resistance, Junction-to-Ambient (Note 1c) 69 (Dual Operatio

4.6. fdma1023pz.pdf Size:417K _fairchild_semi

oxides Pin 1 S1 G1 D2 6 D1 S1 1 D1 D2 5 G2 G1 2 D2 4 3 S2 D1 G2 S2 MicroFET 2X2 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter Ratings Units VDS Drain to Source Voltage –20 V VGS Gate to Source Voltage ±8 V Drain Current -Continuous (Note 1a) –3.7 ID A -Pulsed –6 1.5 Power Dissipation (Note 1a) PD W (Note 1b) 0.7 TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics R?JA Thermal Resistance for Sin

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