FDPF17N60NT MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: FDPF17N60NT

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd):

Maximale Drain-Source-Spannung (Uds): 600V

Maximale Gate-Source-Spannung (Ugs):

Maximaler Drainstrom (Id): 17.0

Höchste Sperrschichttemperatur (Tj), °C:

Anstiegszeit (tr):

Drain-Kapazität (Cd), pF:

Ausgangswiderstand (Rds), Ohm: 0.34

Transistorgehäuse: TO220F

Ersatz (vergleichstyp) für FDPF17N60NT Transistor

FDPF17N60NT - PDF-Dokument zum Download bereitstellen...

1.1. fdp17n60n_fdpf17n60nt.pdf Size:761K _fairchild_semi

±30 V -Continuous (TC = 25oC) 17 17* ID Drain Current A -Continuous (TC = 100oC) 10.2 10.2* IDM Drain Current - Pulsed (Note 1) 68 68* A EAS Single Pulsed Avalanche Energy (Note 2) 838 mJ IAR Avalanche Current (Note 1) 17 A EAR Repetitive Avalanche Energy (Note 1) 24.5 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 10 V/ns (TC = 25oC) 245 62.5 W PD Power Dissipation - Derate above 25oC2.0 0.5 W/oC o TJ, TSTG Operating and Storage Temperature Range -55 to +150 C Maximum Lead Temperatur

5.1. fdp18n20f_fdpf18n20f.pdf Size:685K _fairchild_semi

tage ±30 V -Continuous (TC = 25oC) 18 18* ID Drain Current A -Continuous (TC = 100oC) 10.8 10.8* IDM Drain Current - Pulsed (Note 1) 72 72* A EAS Single Pulsed Avalanche Energy (Note 2) 324 mJ IAR Avalanche Current (Note 1) 18 A EAR Repetitive Avalanche Energy (Note 1) 10 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns (TC = 25oC) 100 41 W PD Power Dissipation - Derate above 25oC 0.83 0.33 W/oC o TJ, TSTG Operating and Storage Temperature Range -55 to +150 C Maximum Lead Tempe

5.2. fdp10n50u_fdpf10n50ut.pdf Size:483K _fairchild_semi

te to Source Voltage ±30 V -Continuous (TC = 25oC) 8 8* ID Drain Current A -Continuous (TC = 100oC) 4.8 4.8* IDM Drain Current - Pulsed (Note 1) 32 32* A EAS Single Pulsed Avalanche Energy (Note 2) 320 mJ IAR Avalanche Current (Note 1) 8 A EAR Repetitive Avalanche Energy (Note 1) 12.5 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns (TC = 25oC) 125 42 W PD Power Dissipation - Derate above 25oC1.0 0.33 W/oC o TJ, TSTG Operating and Storage Temperature Range -55 to +150 C Maximum

5.3. fdp16n50u_fdpf16n50ut.pdf Size:241K _fairchild_semi

Source Voltage ±30 V -Continuous (TC = 25oC) 15 15* ID Drain Current A -Continuous (TC = 100oC) 9 9* IDM Drain Current - Pulsed (Note 1) 60 60* A EAS Single Pulsed Avalanche Energy (Note 2) 610 mJ IAR Avalanche Current (Note 1) 15 A EAR Repetitive Avalanche Energy (Note 1) 20 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns (TC = 25oC) 200 38.5 W PD Power Dissipation - Derate above 25oC 1.59 0.3 W/oC o TJ, TSTG Operating and Storage Temperature Range -55 to +150 C Maximum Lead

5.4. fdp15n40_fdpf15n40.pdf Size:250K _fairchild_semi

ge ±30 V -Continuous (TC = 25oC) 15 15* ID Drain Current A -Continuous (TC = 100oC) 9 9* IDM Drain Current - Pulsed (Note 1) 60 60* A EAS Single Pulsed Avalanche Energy (Note 2) 731 mJ IAR Avalanche Current (Note 1) 15 A EAR Repetitive Avalanche Energy (Note 1) 17 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 15 V/ns (TC = 25oC) 170 40 W PD Power Dissipation - Derate above 25oC 1.45 0.3 W/oC o TJ, TSTG Operating and Storage Temperature Range -55 to +150 C Maximum Lead Temperature for

5.5. fdp10n50f_fdpf10n50ft.pdf Size:409K _fairchild_semi

ce Voltage ±30 V -Continuous (TC = 25oC) 9 9* ID Drain Current A -Continuous (TC = 100oC) 5.4 5.4* IDM Drain Current - Pulsed (Note 1) 36 36* A EAS Single Pulsed Avalanche Energy (Note 2) 364 mJ IAR Avalanche Current (Note 1) 9 A EAR Repetitive Avalanche Energy (Note 1) 12.5 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns (TC = 25oC) 125 42 W PD Power Dissipation - Derate above 25oC1.0 0.33 W/oC o TJ, TSTG Operating and Storage Temperature Range -55 to +150 C Maximum Lead Tempe

5.6. fdp14n30_fdpf14n30.pdf Size:483K _fairchild_semi

ote 1) IDM Drain Current - Pulsed 56 56 ? A VGSS Gate-Source voltage ±30 V (Note 2) EAS Single Pulsed Avalanche Energy 330 mJ IAR Avalanche Current (Note 1) 14 A EAR Repetitive Avalanche Energy (Note 1) 14 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25°C) 140 35 W - Derate above 25°C 1.12 0.28 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum Lead Temperature for Soldering Purpose, 300 °C 1/8” from Case for 5 Seconds

5.7. fdp19n40_fdpf19n40.pdf Size:258K _fairchild_semi

-Continuous (TC = 25oC) 19 19* ID Drain Current A -Continuous (TC = 100oC) 11.4 11.4* IDM Drain Current - Pulsed (Note 1) 76 76* A EAS Single Pulsed Avalanche Energy (Note 2) 542 mJ IAR Avalanche Current (Note 1) 19 A EAR Repetitive Avalanche Energy (Note 1) 21.5 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 15 V/ns (TC = 25oC) 215 40 W PD Power Dissipation - Derate above 25oC 1.65 0.3 W/oC o TJ, TSTG Operating and Storage Temperature Range -55 to +150 C Maximum Lead Temperature for

5.8. fdp12n50nz_fdpf12n50nz.pdf Size:377K _fairchild_semi

ge 500 V VGSS Gate to Source Voltage ±25 V - Continuous (TC = 25oC) 11.5 11.5* ID Drain Current A - Continuous (TC = 100oC) 6.9 6.9* IDM Drain Current - Pulsed (Note 1) 46 46* A EAS Single Pulsed Avalanche Energy (Note 2) 560 mJ IAR Avalanche Current (Note 1) 11.5 A EAR Repetitive Avalanche Energy (Note 1) 17 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns (TC = 25oC) 170 42 W PD Power Dissipation - Derate above 25oC 1.37 0.33 W/oC o TJ, TSTG Operating and Storage Temperature

5.9. fdp18n50_fdpf18n50.pdf Size:466K _fairchild_semi

ote 1) IDM Drain Current - Pulsed 72 72 ? A VGSS Gate-Source voltage ±30 V (Note 2) EAS Single Pulsed Avalanche Energy 945 mJ IAR Avalanche Current (Note 1) 18 A EAR Repetitive Avalanche Energy (Note 1) 23.5 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25°C) 235 38.5 W - Derate above 25°C 1.88 0.3 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum Lead Temperature for Soldering Purpose, 300 °C 1/8” from Case for 5 Secon

5.10. fdp12n50_fdpf12n50.pdf Size:446K _fairchild_semi

±30 V -Continuous (TC = 25oC) 11.5 11.5 * ID Drain Current A -Continuous (TC = 100oC) 6.9 6.9 * IDM Drain Current - Pulsed (Note 1) 46 46 * A EAS Single Pulsed Avalanche Energy (Note 2) 456 mJ IAR Avalanche Current (Note 1) 11.5 A EAR Repetitive Avalanche Energy (Note 1) 16.7 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns (TC = 25oC) 165 42 W PD Power Dissipation - Derate above 25oC1.33 0.3 W/oC o TJ, TSTG Operating and Storage Temperature Range -55 to +150 C Maximum Lead Tem

5.11. fdp13n50f_fdpf13n50ft.pdf Size:625K _fairchild_semi

ce Voltage ±30 V -Continuous (TC = 25oC) 12 12* ID Drain Current A -Continuous (TC = 100oC) 7.2 7.2* IDM Drain Current - Pulsed (Note 1) 48 48* A EAS Single Pulsed Avalanche Energy (Note 2) 684 mJ IAR Avalanche Current (Note 1) 12 A EAR Repetitive Avalanche Energy (Note 1) 19.5 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns (TC = 25oC) 195 42 W PD Power Dissipation - Derate above 25oC 1.53 0.33 W/oC o TJ, TSTG Operating and Storage Temperature Range -55 to +150 C Maximum Lead

5.12. fdp12n50u_fdpf12n50ut.pdf Size:646K _fairchild_semi

Gate to Source Voltage ±30 V -Continuous (TC = 25oC) 10 10* ID Drain Current A -Continuous (TC = 100oC) 6 6* IDM Drain Current - Pulsed (Note 1) 40 40* A EAS Single Pulsed Avalanche Energy (Note 2) 456 mJ IAR Avalanche Current (Note 1) 10 A EAR Repetitive Avalanche Energy (Note 1) 16.5 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns (TC = 25oC) 165 42 W PD Power Dissipation - Derate above 25oC 1.33 0.3 W/oC o TJ, TSTG Operating and Storage Temperature Range -55 to +150 C Maxi

5.13. fdp15n65_fdpf15n65.pdf Size:490K _fairchild_semi

ote 1) IDM Drain Current - Pulsed A 60 60* VGSS Gate-Source voltage ± 30 V (Note 2) EAS Single Pulsed Avalanche Energy 637 mJ IAR Avalanche Current (Note 1) 15 A EAR Repetitive Avalanche Energy (Note 1) 25.0 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25°C) 250 38.5 W - Derate above 25°C 2.0 0.3 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum Lead Temperature for Soldering Purpose, 300 °C 1/8” from Case for 5 Secon

5.14. fdp12n60nz_fdpf12n60nz.pdf Size:284K _fairchild_semi

Voltage 600 V VGSS Gate to Source Voltage ±30 V -Continuous (TC = 25oC) 12 12* ID Drain Current A -Continuous (TC = 100oC) 7.2 7.2* IDM Drain Current - Pulsed (Note 1) 48 48* A EAS Single Pulsed Avalanche Energy (Note 2) 565 mJ IAR Avalanche Current (Note 1) 12 A EAR Repetitive Avalanche Energy (Note 1) 24 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 10 V/ns (TC = 25oC) 240 39 W PD Power Dissipation - Derate above 25oC2.0 0.3 W/oC o TJ, TSTG Operating and Storage Temperature Range

5.15. fdp10n60zu_fdpf10n60zut.pdf Size:554K _fairchild_semi

VGSS Gate to Source Voltage ±30 V -Continuous (TC = 25oC) 9 9* ID Drain Current A -Continuous (TC = 100oC) 5.4 5.4* IDM Drain Current - Pulsed (Note 1) 36 36* A EAS Single Pulsed Avalanche Energy (Note 2) 100 mJ IAR Avalanche Current (Note 1) 9 A EAR Repetitive Avalanche Energy (Note 1) 18 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns (TC = 25oC) 180 42 W PD Power Dissipation - Derate above 25oC 1.45 0.3 W/oC o TJ, TSTG Operating and Storage Temperature Range -55 to +150 C Ma

5.16. fdp16n50_fdpf16n50.pdf Size:464K _fairchild_semi

1) IDM Drain Current - Pulsed 64 64 ? A VGSS Gate-Source voltage ±30 V (Note 2) EAS Single Pulsed Avalanche Energy 780 mJ IAR Avalanche Current (Note 1) 16 A EAR Repetitive Avalanche Energy (Note 1) 20 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25°C) 200 38.5 W - Derate above 25°C 1.59 0.3 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum Lead Temperature for Soldering Purpose, 300 °C 1/8” from Case for 5 Seconds *

5.17. fdp12n50f_fdpf12n50ft.pdf Size:695K _fairchild_semi

rce Voltage ±30 V -Continuous (TC = 25oC) 11.5 11.5* ID Drain Current A -Continuous (TC = 100oC) 6.9 6.9* IDM Drain Current - Pulsed (Note 1) 46 46* A EAS Single Pulsed Avalanche Energy (Note 2) 456 mJ IAR Avalanche Current (Note 1) 11.5 A EAR Repetitive Avalanche Energy (Note 1) 16.5 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns (TC = 25oC) 165 42 W PD Power Dissipation - Derate above 25oC1.33 0.33 W/oC o TJ, TSTG Operating and Storage Temperature Range -55 to +150 C Maximu

Anderen MOSET... FDPF12N60NZ , FDPF12N60NZ , FDPF13N50FT , FDPF14N30 , FDPF15N65 , FDPF16N50 , FDPF16N50T , FDPF16N50UT , 2SK2996 , FDPF17N60NT , FDPF18N20FT , FDPF18N20FT , FDPF18N50 , FDPF18N50T , FDPF190N15A , FDPF20N50 , FDPF20N50FT .