FDS6682 MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: FDS6682

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd):

Maximale Drain-Source-Spannung (Uds): 30V

Maximale Gate-Source-Spannung (Ugs):

Maximaler Drainstrom (Id): 14.0

Höchste Sperrschichttemperatur (Tj), °C:

Anstiegszeit (tr):

Drain-Kapazität (Cd), pF:

Ausgangswiderstand (Rds), Ohm: 0.0075

Transistorgehäuse: SOIC

Ersatz (vergleichstyp) für FDS6682 Transistor

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1.1. fds6682.pdf Size:118K _fairchild_semi

0 TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 50 R?JA °C/W Thermal Resistance, Junction-to-Case (Note 1) 25 R?JC °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6682 FDS6682 13’’ 12mm 2500 units ©2004 Fairchild Semiconductor Corporation FDS6682 Rev D(W) FDS6682 Electrical Characteristics TA = 25°C unless otherwise noted Symbol P

4.1. fds6680as.pdf Size:982K _fairchild_semi

G S 8 1 S SO-8 S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage V ±20 ID Drain Current – Continuous (Note 1a) 11.5 A – Pulsed 50 PD Power Dissipation for Single Operation (Note 1a) 2.5 W (Note 1b) 1.2 (Note 1c) 1 TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 50 R?JA

4.2. fds6680.pdf Size:107K _fairchild_semi

VGSS Gate-Source Voltage ±20 V ID Drain Current - Continuous (Note 1a) 11.5 A - Pulsed 50 PD Power Dissipation for Single Operation (Note 1a) 2.5 W (Note 1b) 1.2 (Note 1c) 1 TJ,TSTG Operating and Storage Temperature Range -55 to 150 °C THERMAL CHARACTERISTICS R?JA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W R?JC Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W FDS6680 Rev.E1 © 1998 Fairchild Semiconductor Corporation Electrical Characteristics (TA = 25 OC unless

4.3. fds6681z.pdf Size:104K _fairchild_semi

0 A – Pulsed –105 PD Power Dissipation for Single Operation (Note 1a) 2.5 W (Note 1b) 1.2 (Note 1c) 1.0 TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 50 R?JA °C/W Thermal Resistance, Junction-to-Case (Note 1) 25 R?JC °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6681Z FDS6681Z 13’’ 12mm 2500 units FDS6681Z Rev

4.4. fds6680a.pdf Size:102K _fairchild_semi

Pulsed 50 Power Dissipation for Single Operation (Note 1a) 2.5 PD W (Note 1b) 1.2 (Note 1c) 1.0 TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics R?JA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W R?JC Thermal Resistance, Junction-to-Ambient (Note 1) 25 Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6680A FDS6680A 13’’ 12mm 2500 units ©2004 Fairchild Semiconducto

Anderen MOSET... FDS6673BZ_F085 , FDS6675BZ , FDS6676AS , FDS6676AS , FDS6679AZ , FDS6680AS , FDS6680AS , FDS6681Z , 40673 , FDS6682 , FDS6690AS , FDS6690AS , FDS6692A , FDS6692A , FDS6699S , FDS6699S , FDS6892A .