FDS6692A MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: FDS6692A

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd):

Maximale Drain-Source-Spannung (Uds): 30V

Maximale Gate-Source-Spannung (Ugs):

Maximaler Drainstrom (Id): 9.0

Höchste Sperrschichttemperatur (Tj), °C:

Anstiegszeit (tr):

Drain-Kapazität (Cd), pF:

Ausgangswiderstand (Rds), Ohm: 0.0115

Transistorgehäuse: SOIC

Ersatz (vergleichstyp) für FDS6692A Transistor

FDS6692A - PDF-Dokument zum Download bereitstellen...

1.1. fds6692a.pdf Size:458K _fairchild_semi

= 25oC, VGS = 10V, R?JA = 85oC/W) ID Continuous (TA = 25oC, VGS = 4.5V, R?JA = 85oC/W) 8.2 A Pulsed 48 A EAS Single Pulse Avalanche Energy (Note 1) 79 mJ PD Power dissipation 1.47 W o TJ, TSTG Operating and Storage Temperature -55 to 150 C Thermal Characteristics o R?JA Thermal Resistance, Junction to Ambient at 10 seconds (Note 3) 50 C/W o R?JA Thermal Resistance, Junction to Ambient at 1000 seconds (Note 3) 85 C/W Package Marking and Ordering Information Device Marking Device P

4.1. fds6699s.pdf Size:527K _fairchild_semi

ce Voltage 30 V VGSS Gate-Source Voltage ±20 V ID Drain Current – Continuous (Note 1a) 21 A – Pulsed 105 PD Power Dissipation for Single Operation (Note 1a) 2.5 W (Note 1b) 1.2 (Note 1c) 1 TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics R?JA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W R?JC Thermal Resistance, Junction-to-Case (Note 1) 25 Package Marking and Ordering Information Device Marking Device Reel Size Tape width Q

4.2. fds6694.pdf Size:116K _fairchild_semi

5 PD W (Note 1b) 1.4 (Note 1c) 1.2 TJ, TSTG Operating and Storage Junction Temperature Range –55 to +175 °C Thermal Characteristics R?JA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W R?JA Thermal Resistance, Junction-to-Ambient (Note 1c) 125 °C/W R?JC Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6694 FDS6694 13’’ 12mm 2500 units ©2004 Fairchild Semiconductor Corporat

4.3. fds6690a.pdf Size:452K _fairchild_semi

nt – Continuous (Note 1a) 11 A – Pulsed 50 Power Dissipation for Single Operation (Note 1a) 2.5 PD W (Note 1b) 1.0 EAS Single Pulse Avalanche Energy (Note 3) 96 mJ TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics R?JA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W R?JA Thermal Resistance, Junction-to-Ambient (Note 1b) 125 R?JC Thermal Resistance, Junction-to-Case (Note 1) 25 Package Marking and Ordering Informat

4.4. fds6690as.pdf Size:746K _fairchild_semi

s TA=25oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage V ±20 ID Drain Current – Continuous (Note 1a) 10 A – Pulsed 50 PD Power Dissipation for Single Operation (Note 1a) 2.5 W (Note 1b) 1.2 (Note 1c) 1 TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 50 R?JA °C/W Thermal Resistance, Junction-to-Case (No

4.5. fds6690.pdf Size:78K _fairchild_semi

S6690 Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 V ID Drain Current - Continuous (Note 1a) 10 A - Pulsed 50 PD Power Dissipation for Single Operation (Note 1a) 2.5 W (Note 1b) 1.2 (Note 1c) 1 TJ,TSTG Operating and Storage Temperature Range -55 to 150 °C THERMAL CHARACTERISTICS R?JA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W R?JC Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W © 1998 Fairchild Semiconductor Corporation FDS6690 Rev.B FDS 66

Anderen MOSET... FDS6679AZ , FDS6680AS , FDS6680AS , FDS6681Z , FDS6682 , FDS6682 , FDS6690AS , FDS6690AS , IRF630 , FDS6692A , FDS6699S , FDS6699S , FDS6892A , FDS6898A , FDS6898AZ , FDS6898AZ_F085 , FDS6900AS .