MOSFET

Zwischen 3 und 20 Zeichen (nur Zahlen und Buchstaben)
 
FDS86141
  FDS86141
  FDS86141
 
FDS86141
  FDS86141
  FDS86141
 
FDS86141
  FDS86141
 
 
Liste
2N3824 ..2N6967JANTX
2N6967JANTXV ..2SJ205
2SJ206 ..2SK1189
2SK1190 ..2SK2131
2SK2132 ..2SK2866
2SK2869 ..2SK3444
2SK3445 ..2SK814
2SK875 ..3SK45
3SK47 ..APT40M82WVR
APT5010B2VFR ..AUIRFB3607
AUIRFB3806 ..BF1211WR
BF1212 ..BLF6G20S-230PRN
BLF6G20S-45 ..BSC076N06NS3G
BSC077N12NS3G ..BSZ086P03NS3EG
BSZ086P03NS3G ..BUK7510-100B
BUK7510-30 ..BUK9608-55B
BUK9609-40B ..C2T212
C2T213 ..CEF13N5A
CEF14N5 ..CEP830G
CEP83A3 ..DMG6898LSD
DMG6968U ..ECH8672
ECH8673 ..FDB4030L
FDB44N25 ..FDD7N20TM
FDD7N20TM ..FDMC86102
FDMC86102L ..FDP150N10
FDP150N10 ..FDS5670
FDS5672 ..FK10VS-9
FK14KM-10 ..FQD4N20
FQD4N25 ..FQS4901
FQS4901 ..FRX130D2
FRX130D3 ..H7N0405LS
H7N0602AB ..HAT2198R
HAT2198WP ..HUF76419D3
HUF76419D3S ..IPB320N20N3G
IPB34CN10NG ..IPD90N04S3-H4
IPD90N04S4-02 ..IPP114N03LG
IPP114N12N3G ..IRC531-008
IRC533 ..IRF520NS
IRF521 ..IRF7241
IRF730 ..IRF822FI
IRF823 ..IRFBC20S
IRFBC30 ..IRFIBC40GLC
IRFIBE20G ..IRFP9242
IRFP9243 ..IRFS440
IRFS440A ..IRFU212
IRFU214 ..IRL3215
IRL3302 ..IRLR3802
IRLR3915 ..IXFC80N085
IXFC96N15P ..IXFK180N15P
IXFK180N25T ..IXFN44N50U2
IXFN44N50U3 ..IXFT58N20Q
IXFT60N20 ..IXTA120N075T2
IXTA120P065T ..IXTH200N085T
IXTH200N10T ..IXTN320N10T
IXTN32P60P ..IXTQ280N055T
IXTQ30N50L ..IXTY50N085T
IXTY55N075T ..KMA4D5P20XA
KMA5D2N30XA ..KTK597
KTK597E ..NDF06N60Z
NDF06N62Z ..NTGS4141N
NTGS5120P ..PHB20N06T
PHB20NQ20T ..PMN45EN
PMN48XP ..R5009ANJ
R5009ANX ..RHP020N06
RHP030N03 ..RJK6015DPM
RJK6018DPK ..RW1E014SN
RW1E015RP ..SFI9624
SFI9630 ..SML1004R2GN
SML1004R2KN ..SML80T27
SMP3003 ..SSD40P04-20D
SSD40P04-20DE ..SSM3J135TU
SSM3J13T ..SSM6N37CTD
SSM6N37FE ..STB20NM60
STB20NM60D ..STD40N2LH5
STD40NF03L ..STF7N95K3
STF7NM60N ..STP10NM65N
STP11N52K3 ..STP4NK50Z
STP4NK50ZD ..STT3434N
STT3457P ..Si6821DQ
Si6923DQ ..TK75J04K3Z
TK7A45DA ..TPCA8027-H
TPCA8028-H ..WTD9575
WTD9973 ..ZXMP2120G4
ZXMP3A13F ..ZXMS6006SG
 
Alle MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt.
 

FDS86141 MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: FDS86141

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd):

Maximale Drain-Source-Spannung (Uds): 100V

Maximale Gate-Source-Spannung (Ugs):

Maximaler Drainstrom (Id): 7.0

Höchste Sperrschichttemperatur (Tj), °C:

Anstiegszeit (tr):

Drain-Kapazität (Cd), pF:

Ausgangswiderstand (Rds), Ohm: 0.023

Transistorgehäuse: SOIC

Ersatz (vergleichstyp) für FDS86141 Transistor

FDS86141 - PDF-Dokument zum Download bereitstellen...

1.1. fds86141.pdf Size:250K _fairchild_semi

FDS86141
 datasheet FDS86141
 Equivalent Storage Junction Temperature Range -55 to +150 °C Thermal Characteristics R?JC Thermal Resistance, Junction to Case (Note 1) 2.5 °C/W R?JA Thermal Resistance, Junction to Ambient (Note 1a) 50 Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDS86141 FDS86141 SO-8 13 ’’ 12 mm 2500 units ©2011 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDS86141 Rev. C3 FDS86141 N-Channel Power Trench MOSFET ® Electrical Characteris

3.1. fds86140.pdf Size:250K _fairchild_semi

FDS86141
 datasheet FDS86141
 Equivalent 2 ID A -Pulsed 50 EAS Single Pulse Avalanche Energy (Note 3) 264 mJ Power Dissipation TC = 25 °C (Note 1) 5.0 PD W Power Dissipation TA = 25 °C (Note 1a) 2.5 TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C Thermal Characteristics R?JC Thermal Resistance, Junction to Case (Note 1) 25 °C/W R?JA Thermal Resistance, Junction to Ambient (Note 1a) 50 Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDS86140 FDS8

4.1. fds86106.pdf Size:257K _fairchild_semi

FDS86141
 datasheet FDS86141
 Equivalent (Note 1a) 5.0 PD W Power Dissipation TA = 25 °C (Note 1b) 2.5 TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C Thermal Characteristics R?JC Thermal Resistance, Junction to Case (Note 1) 2.5 °C/W R?JA Thermal Resistance, Junction to Ambient (Note 1a) 50 Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDS86106 FDS86106 SO-8 13 ’’ 12 mm 2500 units ©2011 Fairchild Semiconductor Corporation 1 www.fairchildsemi.c

Anderen MOSET... FDS8447 , FDS8449 , FDS8449_F085 , FDS86106 , FDS86106 , FDS86140 , FDS86140 , FDS86141 , BFR84 , FDS86240 , FDS86242 , FDS86252 , FDS8638 , FDS8813NZ , FDS8813NZ , FDS8817NZ , FDS8817NZ .

(C) 2005 All Right reserved Bipolare || MOSFET || IGBT | | Hersteller Websites | | SMD-Codes | | Transistorgehäuse