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FDS86141
MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt. Typenbezeichnung: FDS86141
Typ von Feldeffekttransistors: MOSFET
Kanaltyp: N
Gesamt-Verlustleistung (Pd):
Maximale Drain-Source-Spannung (Uds): 100V
Maximale Gate-Source-Spannung (Ugs):
Maximaler Drainstrom (Id): 7.0
Höchste Sperrschichttemperatur (Tj), °C:
Anstiegszeit (tr):
Drain-Kapazität (Cd), pF:
Ausgangswiderstand (Rds), Ohm: 0.023
Transistorgehäuse: SOIC
Ersatz (vergleichstyp) für FDS86141
Transistor FDS86141
- PDF-Dokument zum Download bereitstellen...
1.1. fds86141.pdf Size:250K _fairchild_semi |
| Storage Junction Temperature Range -55 to +150 °C
Thermal Characteristics
R?JC Thermal Resistance, Junction to Case (Note 1) 2.5
°C/W
R?JA Thermal Resistance, Junction to Ambient (Note 1a) 50
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDS86141 FDS86141 SO-8 13 ’’ 12 mm 2500 units
©2011 Fairchild Semiconductor Corporation 1
www.fairchildsemi.com
FDS86141 Rev. C3
FDS86141 N-Channel Power Trench
MOSFET
®
Electrical Characteris |
3.1. fds86140.pdf Size:250K _fairchild_semi |
| 2
ID A
-Pulsed 50
EAS Single Pulse Avalanche Energy (Note 3) 264 mJ
Power Dissipation TC = 25 °C (Note 1) 5.0
PD W
Power Dissipation TA = 25 °C (Note 1a) 2.5
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C
Thermal Characteristics
R?JC Thermal Resistance, Junction to Case (Note 1) 25
°C/W
R?JA Thermal Resistance, Junction to Ambient (Note 1a) 50
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDS86140 FDS8 |
4.1. fds86106.pdf Size:257K _fairchild_semi |
| (Note 1a) 5.0
PD W
Power Dissipation TA = 25 °C (Note 1b) 2.5
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C
Thermal Characteristics
R?JC Thermal Resistance, Junction to Case (Note 1) 2.5
°C/W
R?JA Thermal Resistance, Junction to Ambient (Note 1a) 50
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDS86106 FDS86106 SO-8 13 ’’ 12 mm 2500 units
©2011 Fairchild Semiconductor Corporation 1
www.fairchildsemi.c |
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