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2SK3080
MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt. Typenbezeichnung: 2SK3080
Typ von Feldeffekttransistors: MOSFET
Kanaltyp: N
Gesamt-Verlustleistung (Pd): 50
Maximale Drain-Source-Spannung (Uds): 30V
Maximale Gate-Source-Spannung (Ugs): 20
Maximaler Drainstrom (Id): 30
Höchste Sperrschichttemperatur (Tj), °C: 150
Anstiegszeit (tr):
Drain-Kapazität (Cd), pF: 750
Ausgangswiderstand (Rds), Ohm: 0.035
Transistorgehäuse: TO220AB
Ersatz (vergleichstyp) für 2SK3080
Transistor 2SK3080
- PDF-Dokument zum Download bereitstellen...
4.1. 2sk3085.pdf  Size:177K _toshiba  |
 | nder heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual re |
4.2. rej03g1065_2sk3082lsds.pdf Size:108K _renesas  |
 | and careful attention to
additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website.
2. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights
of third parties by or arising from the use of Renesas Electronics products or technical information described in this document.
No license, express, implied or otherwise, is granted hereby under any patents, copyr |
4.3. 2sk3082.pdf Size:94K _renesas  |
 | PW ? 10 µs, duty cycle ? 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ? 50 ?
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V(BR)DSS 60 — — V ID = 10 mA, VGS = 0
Gate to source breakdown voltage V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0
Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0
Zero gate voltage drain current IDSS — — 10 µA VDS = 60 V, VGS = 0
Gate to source cutoff voltage V |
Anderen MOSET... 2SK2958
, 2SK2959
, 2SK2978
, 2SK2979
, 2SK2980
, 2SK3000
, 2SK3069
, 2SK3070
, IRF9540N
, 2SK3081
, 2SK3082
, 2SK3133
, 2SK3134
, 2SK3135
, 2SK3136
, 2SK3140
, 2SK3141
.
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