FQPF3N80C MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: FQPF3N80C

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd):

Maximale Drain-Source-Spannung (Uds): 800V

Maximale Gate-Source-Spannung (Ugs):

Maximaler Drainstrom (Id): 3.0

Höchste Sperrschichttemperatur (Tj), °C:

Anstiegszeit (tr):

Drain-Kapazität (Cd), pF:

Ausgangswiderstand (Rds), Ohm: 4.8

Transistorgehäuse: TO220F

Ersatz (vergleichstyp) für FQPF3N80C Transistor

FQPF3N80C - PDF-Dokument zum Download bereitstellen...

1.1. fqp3n80c_fqpf3n80c.pdf Size:810K _fairchild_semi

00 V ID Drain Current - Continuous (TC = 25°C) 33 * A - Continuous (TC = 100°C) 1.9 1.9 * A IDM (Note 1) 12 12 * A Drain Current - Pulsed VGSS Gate-Source Voltage ± 30 V EAS (Note 2) 320 mJ Single Pulsed Avalanche Energy IAR (Note 1) 3A Avalanche Current EAR (Note 1) 10.7 mJ Repetitive Avalanche Energy dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25°C) 107 39 W - Derate above 25°C 0.85 0.31 W/°C TJ, TSTG Operating and Storage Temperature Range

4.1. fqp3n50c_fqpf3n50c.pdf Size:1269K _fairchild_semi

Series S Absolute Maximum Ratings Symbol Parameter FQP3N50C FQPF3N50C Units VDSS Drain-Source Voltage 500 V ID Drain Current - Continuous (TC = 25°C) A 33 * - Continuous (TC = 100°C) A 1.8 1.8 * (Note 1) IDM Drain Current - Pulsed A 12 12 * VGSS Gate-Source Voltage ± 30 V (Note 2) EAS Single Pulsed Avalanche Energy 200 mJ (Note 1) IAR Avalanche Current 3A (Note 1) EAR Repetitive Avalanche Energy 6.2 mJ (Note 3) dv/dt Peak Diode Recovery dv/dt 4.5 V/ns

5.1. fqpf33n10l.pdf Size:657K _fairchild_semi

nt - Continuous (TC = 25°C) 18 A - Continuous (TC = 100°C) 12.7 A IDM (Note 1) 72 A Drain Current - Pulsed VGSS Gate-Source Voltage ± 20 V EAS (Note 2) 430 mJ Single Pulsed Avalanche Energy IAR (Note 1) 18 A Avalanche Current EAR (Note 1) 4.1 mJ Repetitive Avalanche Energy dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns PD Power Dissipation (TC = 25°C) 41 W - Derate above 25°C 0.27 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +175 °C Maximum lead temperature

5.2. fqpf33n10.pdf Size:591K _fairchild_semi

rain Current - Continuous (TC = 25°C) 18 A - Continuous (TC = 100°C) 12.7 A IDM (Note 1) 72 A Drain Current - Pulsed VGSS Gate-Source Voltage ± 25 V EAS (Note 2) 430 mJ Single Pulsed Avalanche Energy IAR (Note 1) 18 A Avalanche Current EAR (Note 1) 4.1 mJ Repetitive Avalanche Energy dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns PD Power Dissipation (TC = 25°C) 41 W - Derate above 25°C 0.27 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +175 °C Maximum lead t

5.3. fqpf30n06l.pdf Size:653K _fairchild_semi

ource Voltage 60 V ID Drain Current - Continuous (TC = 25°C) 22.5 A - Continuous (TC = 100°C) 15.9 A IDM (Note 1) 90 A Drain Current - Pulsed VGSS Gate-Source Voltage ± 20 V EAS (Note 2) 350 mJ Single Pulsed Avalanche Energy IAR (Note 1) 22.5 A Avalanche Current EAR (Note 1) 3.8 mJ Repetitive Avalanche Energy dv/dt Peak Diode Recovery dv/dt (Note 3) 7.0 V/ns PD Power Dissipation (TC = 25°C) 38 W - Derate above 25°C 0.25 W/°C TJ, TSTG Operating and Storage Junction Temperatur

5.4. fqp32n20c_fqpf32n20c.pdf Size:1208K _fairchild_semi

s VDSS Drain-Source Voltage 200 V ID Drain Current - Continuous (TC = 25°C) 28.0 28.0 * A - Continuous (TC = 100°C) 17.8 17.8 * A IDM (Note 1) 112 112 * A Drain Current - Pulsed VGSS Gate-Source Voltage ± 30 V EAS (Note 2) 955 mJ Single Pulsed Avalanche Energy IAR (Note 1) 28.0 A Avalanche Current EAR (Note 1) 15.6 mJ Repetitive Avalanche Energy dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns PD Power Dissipation (TC = 25°C) 156 50 W - Derate above 25°C 1.25 0.4 W/°C TJ,

Anderen MOSET... FQPF2N80 , FQPF30N06L , FQPF32N20C , FQPF32N20C , FQPF33N10 , FQPF33N10 , FQPF33N10L , FQPF33N10L , HRF3205 , FQPF3N80C , FQPF45N15V2 , FQPF47P06 , FQPF4N90C , FQPF5N40 , FQPF5N40 , FQPF5N90 , FQPF5P20 .