FQPF630 MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: FQPF630

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd):

Maximale Drain-Source-Spannung (Uds): 200V

Maximale Gate-Source-Spannung (Ugs):

Maximaler Drainstrom (Id): 6.3

Höchste Sperrschichttemperatur (Tj), °C:

Anstiegszeit (tr):

Drain-Kapazität (Cd), pF:

Ausgangswiderstand (Rds), Ohm: 0.4

Transistorgehäuse: TO220F

Ersatz (vergleichstyp) für FQPF630 Transistor

FQPF630 - PDF-Dokument zum Download bereitstellen...

1.1. fqpf630.pdf Size:765K _fairchild_semi

= 25°C) 6.3 A - Continuous (TC = 100°C) 4.0 A IDM (Note 1) 25.2 A Drain Current - Pulsed VGSS Gate-Source Voltage ± 25 V EAS (Note 2) 164 mJ Single Pulsed Avalanche Energy IAR (Note 1) 6.3 A Avalanche Current EAR (Note 1) 3.8 mJ Repetitive Avalanche Energy dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns PD Power Dissipation (TC = 25°C) 38 W - Derate above 25°C 0.30 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C Maximum lead temperature for soldering p

5.1. fqp6n40c_fqpf6n40c.pdf Size:851K _fairchild_semi

FQP6N40C FQPF6N40C Units VDSS Drain-Source Voltage 400 V ID Drain Current - Continuous (TC = 25°C) 66 * A - Continuous (TC = 100°C) 3.6 3.6 * A IDM (Note 1) 24 24 * A Drain Current - Pulsed VGSS Gate-Source Voltage ± 30 V EAS (Note 2) 270 mJ Single Pulsed Avalanche Energy IAR (Note 1) 6A Avalanche Current EAR (Note 1) 7.3 mJ Repetitive Avalanche Energy dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25°C) 73 38 W - Derate above 25°C 0.58 0.3 W/°

5.2. fqpf6n80t.pdf Size:1001K _fairchild_semi

(TC = 100°C) 2.1 A IDM (Note 1) 13.2 A Drain Current - Pulsed VGSS Gate-Source Voltage ± 30 V EAS (Note 2) 680 mJ Single Pulsed Avalanche Energy IAR (Note 1) 3.3 A Avalanche Current EAR (Note 1) 5.1 mJ Repetitive Avalanche Energy dv/dt Peak Diode Recovery dv/dt (Note 3) 4.0 V/ns PD Power Dissipation (TC = 25°C) 51 W - Derate above 25°C 0.41 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C Maximum lead temperature for soldering purposes, TL 300 °C 1/8? fr

5.3. fqp6n60c_fqpf6n60c.pdf Size:931K _fairchild_semi

otherwise noted Symbol Parameter FQP6N60C FQPF6N60C Units VDSS Drain-Source Voltage 600 V ID Drain Current - Continuous (TC = 25°C) 5.5 5.5 * A - Continuous (TC = 100°C) 3.3 3.3 * A IDM (Note 1) 22 22 * A Drain Current - Pulsed VGSS Gate-Source Voltage ± 30 V EAS (Note 2) 300 mJ Single Pulsed Avalanche Energy IAR (Note 1) 5.5 A Avalanche Current EAR (Note 1) 12.5 mJ Repetitive Avalanche Energy dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25°C)

5.4. fqpf65n06.pdf Size:681K _fairchild_semi

oltage 60 V ID Drain Current - Continuous (TC = 25°C) 40 A - Continuous (TC = 100°C) 28.3 A IDM (Note 1) 160 A Drain Current - Pulsed VGSS Gate-Source Voltage ± 25 V EAS (Note 2) 645 mJ Single Pulsed Avalanche Energy IAR (Note 1) 40 A Avalanche Current EAR (Note 1) 5.6 mJ Repetitive Avalanche Energy dv/dt Peak Diode Recovery dv/dt (Note 3) 7.0 V/ns PD Power Dissipation (TC = 25°C) 56 W - Derate above 25°C 0.37 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +175

5.5. fqp6n90c_fqpf6n90c.pdf Size:860K _fairchild_semi

V ID Drain Current - Continuous (TC = 25°C) 66 * A - Continuous (TC = 100°C) 3.8 3.8 * A IDM (Note 1) 24 24 * A Drain Current - Pulsed VGSS Gate-Source Voltage ± 30 V EAS (Note 2) 650 mJ Single Pulsed Avalanche Energy IAR (Note 1) 6A Avalanche Current EAR (Note 1) 16.7 mJ Repetitive Avalanche Energy dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25°C) 167 56 W - Derate above 25°C 1.43 0.48 W/°C TJ, TSTG Operating and Storage Temperature Range -5

5.6. fqp6n80c_fqpf6n80c.pdf Size:889K _fairchild_semi

V ID Drain Current - Continuous (TC = 25°C) 5.5 5.5 * A - Continuous (TC = 100°C) 3.2 3.2 * A IDM (Note 1) 22 22 * A Drain Current - Pulsed VGSS Gate-Source Voltage ± 30 V EAS (Note 2) 680 mJ Single Pulsed Avalanche Energy IAR (Note 1) 5.5 A Avalanche Current EAR (Note 1) 15.8 mJ Repetitive Avalanche Energy dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25°C) 158 51 W - Derate above 25°C 1.27 0.41 W/°C TJ, TSTG Operating and Storage Temperature

5.7. fqp6n40cf_fqpf6n40cf.pdf Size:1088K _fairchild_semi

5°C) 6 6* A - Continuous (TC = 100°C) 3.6 3.6* A IDM Drain Current - Pulsed (Note 1) 24 24* A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 270 mJ IAR Avalanche Current (Note 1) 6 A EAR Repetitive Avalanche Energy (Note 1) 73 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25°C) 73 38 W - Derate above 25°C 0.58 0.3 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C Maximum lead temperature for soldering pu

Anderen MOSET... FQPF3N80C , FQPF45N15V2 , FQPF47P06 , FQPF4N90C , FQPF5N40 , FQPF5N40 , FQPF5N90 , FQPF5P20 , BF982 , FQPF630 , FQPF65N06 , FQPF6N80C , FQPF6N80C , FQPF6N80T , FQPF6N80T , FQPF6N90C , FQPF70N10 .