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SI4532DY
MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt. Typenbezeichnung: SI4532DY
Typ von Feldeffekttransistors: MOSFET
Kanaltyp: N
Gesamt-Verlustleistung (Pd):
Maximale Drain-Source-Spannung (Uds): 30V
Maximale Gate-Source-Spannung (Ugs):
Maximaler Drainstrom (Id): 3.9
Höchste Sperrschichttemperatur (Tj), °C:
Anstiegszeit (tr):
Drain-Kapazität (Cd), pF:
Ausgangswiderstand (Rds), Ohm: 0.065
Transistorgehäuse: SOIC
Ersatz (vergleichstyp) für SI4532DY
Transistor SI4532DY
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1.1. si4532dy.pdf  Size:327K _fairchild_semi 1.2. si4532dy.pdf Size:98K _vishay  |
 | SYMBOL N OR P CHANNEL UNIT
Maximum Junction-to-AmbientA RthJA 62.5 _C/W
Notes
A. Surface Mounted on FR4 Board, t v 10 sec.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70155.
For SPICE model information via the Worldwide Web: http://www.siliconix.com/www/product/spice.htm
Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 S Phone (408)988-8000 S FaxBack (408)970-5600 S www.siliconix.com
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4.1. si4532ady.pdf Size:247K _vishay  |
 | Conduction)a
TA = 25 °C
21.132 1.2
PD
W
Maximum Power Dissipationa
TA = 70 °C
1.3 0.73 1.3 0.76
TJ, Tstg
Operating Junction and Storage Temperature Range - 55 to 150 °C
THERMAL RESISTANCE RATINGS
N-Channel P-Channel
Parameter Symbol Unit
Typ. Max. Typ. Max.
t ? 10 s 55 62.5 54 62.5
RthJA
Maximum Junction-to-Ambienta
Steady State 90 110 87 105
°C/W
RthJF
Maximum Junction-to-Foot (Drain) Steady State 40 50 34 45
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document N |
4.2. si4532cd.pdf Size:290K _vishay  |
 | °C
3.9b, c - 2.7b, c
IDM
Pulsed Drain Current (10 µs Pulse Width) 24 - 15 A
TC = 25 °C
2.3 - 2.3
IS
Source-Drain Current Diode Current
TA = 25 °C
1.5b, c - 1.5b, c
ISM
Pulsed Source-Drain Current 24 - 12
IAS
Single Pulse Avalanche Current 78
L = 0.1 mH
EAS
Single Pulse Avalanche Energy 2.5 3.2 mJ
TC = 25 °C
2.78 2.78
TC = 70 °C
1.78 1.78
PD
Maximum Power Dissipation W
TA = 25 °C
1.78b, c 1.78b, c
TA = 70 °C
1.14b, c 1.14b, c
TJ, Tstg
Operating Junction and Storage Te |
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