DMP210DUDJ
MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt. Typenbezeichnung: DMP210DUDJ
Typ von Feldeffekttransistors: MOSFET
Kanaltyp: P
Gesamt-Verlustleistung (Pd): 0.33
Maximale Drain-Source-Spannung (Uds): 20V
Maximale Gate-Source-Spannung (Ugs): 8
Maximaler Drainstrom (Id): 0.14
Höchste Sperrschichttemperatur (Tj), °C:
Anstiegszeit (tr):
Drain-Kapazität (Cd), pF: 13.72
Ausgangswiderstand (Rds), Ohm: 5
Transistorgehäuse: SOT963
Ersatz (vergleichstyp) für DMP210DUDJ
Transistor DMP210DUDJ
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Characteristic Symbol Value Units
Drain-Source Voltage VDSS -20 V
Gate-Source Voltage VGSS ±8 V
Continuous Drain Current (Note 1) @TA = 25°C -140
ID mA
-100
@TA = 85°C
Pulsed Drain Current TP = 10?s IDM -600 mA
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Value Units
Total Power Dissipation (Note 1) PD 330 mW
Thermal Resistance, Junction to Ambient, Note 1 377.16 °C/W
R?JA
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C |
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Marking Information
DMV = Marking Code
YM = Date Code Marking
DMV YM
Y = Year (ex: T = 2006)
M = Month (ex: 9 = September)
Date Code Key
Year 2006 2007 2008 2009 2010 2011 2012
Code T U V W X Y Z
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
1 of 6
January 2011
DMP2104V
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Drain-Source Voltage VDSS -20 V
Gate-Source Voltage VGSS ±12 V
TA = 25°C -1.5
Continuous Drain Current (Note 1) ID A
-1.2
TA = 70°C
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Value Units
Power Dissipation (Note 1) PD 500 mW
Thermal Resistance, Junction to Ambient (Note 1) 250 °C/W
R?JA
Operating and Storage Temperature Range Tj, TSTG -55 to +150 °C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic |
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