2SK3747 MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: 2SK3747

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 3

Maximale Drain-Source-Spannung (Uds): 1500V

Maximale Gate-Source-Spannung (Ugs): 20

Maximaler Drainstrom (Id): 2

Höchste Sperrschichttemperatur (Tj), °C:

Anstiegszeit (tr):

Drain-Kapazität (Cd), pF:

Ausgangswiderstand (Rds), Ohm: 10

Transistorgehäuse:

Ersatz (vergleichstyp) für 2SK3747 Transistor

2SK3747 - PDF-Dokument zum Download bereitstellen...

1.1. 2sk3747.pdf Size:52K _sanyo

0 V Zero-Gate Voltage Drain Current IDSS VDS=1200V, VGS=0V 100 µA Gate-to-Source Leakage Current IGSS VGS= ±16V, VDS=0V ±10 µA Cutoff Voltage VGS(off) VDS=10V, ID=1mA 2.5 3.5 V Forward Transfer Admittance VDS=20V, ID=1A 0.7 1.4 S ?yfs? Static Drain-to-Source On-State Resistance RDS(on) ID=1A, VGS=10V 10 13 ? Marking : K3747 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high

4.1. 2sk3743.pdf Size:296K _toshiba

ion of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability te

4.2. 2sk3742.pdf Size:219K _toshiba

sly under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individu

4.3. 2sk3746.pdf Size:51K _sanyo

=0V 100 µA Gate-to-Source Leakage Current IGSS VGS= ±16V, VDS=0V ±10 µA Cutoff Voltage VGS(off) VDS=10V, ID=1mA 2.5 3.5 V Forward Transfer Admittance VDS=20V, ID=1A 0.7 1.4 S ?yfs? Static Drain-to-Source On-State Resistance RDS(on) ID=1A, VGS=10V 10 13 ? Marking : K3746 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, air

4.4. 2sk3748.pdf Size:52K _sanyo

(BR)DSS ID=1mA, VGS=0V 1500 V Zero-Gate Voltage Drain Current IDSS VDS=1200V, VGS=0V 100 µA Gate-to-Source Leakage Current IGSS VGS= ±16V, VDS=0V ±10 µA Cutoff Voltage VGS(off) VDS=10V, ID=1mA 2.5 3.5 V Forward Transfer Admittance VDS=20V, ID=2A 1.7 2.8 S ?yfs? Static Drain-to-Source On-State Resistance RDS(on) ID=2A, VGS=10V 5 7 ? Marking : K3748 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that

4.5. 2sk3745ls.pdf Size:51K _sanyo

-Gate Voltage Drain Current IDSS VDS=1200V, VGS=0V 100 µA Gate-to-Source Leakage Current IGSS VGS= ±16V, VDS=0V ±10 µA Cutoff Voltage VGS(off) VDS=10V, ID=1mA 2.5 3.5 V Forward Transfer Admittance VDS=20V, ID=1A 0.7 1.4 S ?yfs? Static Drain-to-Source On-State Resistance RDS(on) ID=1A, VGS=10V 10 13 ? Marking : K3745 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of

4.6. 2sk3740.pdf Size:169K _nec

re Tstg –55 to +150 °C Single Avalanche Current Note2 IAS 20 A Single Avalanche Energy Note2 EAS 40 mJ Notes 1. PW ? 10 µs, Duty Cycle ? 1% 2. Starting Tch = 25°C, VDD = 125 V, RG = 25 ?, VGS = 20 > 0 V, L = 100 µH THERMAL RESISTANCE Channel to Case Thermal Resistance Rth(ch-C) 1.25 °C/W Channel to Ambient Thermal Resistance Rth(ch-A) 83.3 °C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest ve

4.7. 2sk3749.pdf Size:103K _nec

perature Tch 150 °C Gate Storage Temperature Tstg -55 to +150 °C Protection Source Diode Note PW ? 10 ms, Duty Cycle ? 50% Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document

4.8. 2sk374.pdf Size:31K _panasonic

30V, VDS= 0 –10 nA Gate-Drain voltage VGDS IG=100µA, VDS= 0 – 55 – 80 V Gate-Source cut-off voltage VGSC VDS=10V, ID=10µA – 5 V Mutual conductance gm VDS=10V, ID= 5mA, f=1kHz 2.5 7.5 mS Input capacitance Ciss 6.5 pF VDS=10V, VGS= 0, f=1MHz Feedback capacitance Crss 1.9 pF VDS=10V, VGS= 0, Rg=100k?, Noise voltage NF 2.5 dB f=100Hz * IDSS rank classification Marking (Example) Rank P Q R S Part Number I Classification DSS IDSS(mA) 1 to 3 2 to 6.5 5 to 12 10 to 20 Part number s

Anderen MOSET... 2SK2394 , 2SK3557 , 2SK3666 , 2SK3703 , 2SK3704 , 2SK3708 , 2SK3745LS , 2SK3746 , IRFBC40 , 2SK3748 , 2SK3796 , 2SK3816 , 2SK3817 , 2SK3820 , 2SK4043LS , 2SK4065 , 2SK4066 .