NTMFS4941N
MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt. Typenbezeichnung: NTMFS4941N
Typ von Feldeffekttransistors: MOSFET
Kanaltyp: N
Gesamt-Verlustleistung (Pd): 25.5
Maximale Drain-Source-Spannung (Uds): 30V
Maximale Gate-Source-Spannung (Ugs): 20
Maximaler Drainstrom (Id): 47
Höchste Sperrschichttemperatur (Tj), °C:
Anstiegszeit (tr):
Drain-Kapazität (Cd), pF:
Ausgangswiderstand (Rds), Ohm: 40.728
Transistorgehäuse: SO8FL_/_DFN5
Ersatz (vergleichstyp) für NTMFS4941N
Transistor NTMFS4941N
- PDF-Dokument zum Download bereitstellen...
3.1. ntmfs4939n-d.pdf  Size:121K _onsemi  |
 | 9.3 A
S
SO-8 FLAT LEAD
Current RqJA G
G D
TA = 100°C 5.9
(Note 2) CASE 488AA
D
STYLE 1
Power Dissipation TA = 25°C PD 0.92 W
RqJA (Note 2)
A = Assembly Location
Continuous Drain TC = 25°C ID 53 A Y = Year
Current RqJC
WW = Work Week
TC =100°C 34
(Note 1)
G = Pb-Free Package
Power Dissipation TC = 25°C PD 30 W (Note: Microdot may be in either location)
RqJC (Note 1)
Pulsed Drain TA = 25°C, tp = 10 ms IDM 159 A
Current
ORDERING INFORMATION
Current Limited by Package TA = 25 |
3.2. ntmfs4926n-d.pdf Size:112K _onsemi  |
 |
SO-8 FLAT LEAD
AYWWG
State
Continuous Drain TA = 25°C ID 9.0 A S
CASE 488AA
G
Current RqJA
G D
STYLE 1
TA = 100°C 5.7
(Note 2)
D
Power Dissipation TA = 25°C PD 0.92 W
RqJA (Note 2)
A = Assembly Location
Y = Year
Continuous Drain TC = 25°C ID 44 A
WW = Work Week
Current RqJC
TC =100°C 28
(Note 1) G = Pb-Free Package
(Note: Microdot may be in either location)
Power Dissipation TC = 25°C PD 21.6 W
RqJC (Note 1)
Pulsed Drain TA = 25°C, tp = 10 ms IDM 182 A
ORDERING INFORMAT |
3.3. ntmfs4936n-d.pdf Size:113K _onsemi  |
 |
RqJA ? 10 s (Note 1)
AYWWG
Steady
S
State SO-8 FLAT LEAD
G
Continuous Drain TA = 25°C ID 11.6 A
G D
CASE 488AA
Current RqJA
D
TA = 100°C 7.3
(Note 2) STYLE 1
Power Dissipation TA = 25°C PD 0.92 W
A = Assembly Location
RqJA (Note 2)
Y = Year
Continuous Drain TC = 25°C ID 79 A WW = Work Week
Current RqJC
G = Pb-Free Package
TC =100°C 50
(Note 1)
(Note: Microdot may be in either location)
Power Dissipation TC = 25°C PD 43 W
RqJC (Note 1)
Pulsed DrainCurrent TA = 25°C, tp |
3.4. ntmfs4937n.pdf Size:143K _onsemi  |
 |
4937N
S
1
TA = 100°C 6.5
(Note 2)
AYWWG
S
SO-8 FLAT LEAD
G
Power Dissipation TA = 25°C PD 0.92 W
G D
CASE 488AA
RqJA (Note 2)
D
STYLE 1
Continuous Drain TC = 25°C ID 70 A
Current RqJC
A = Assembly Location
TC = 85°C 44
(Note 1)
Y = Year
Power Dissipation TC = 25°C PD 43 W
WW = Work Week
RqJC (Note 1)
G = Pb-Free Package
(Note: Microdot may be in either location)
Pulsed Drain TA = 25°C, tp = 10 ms IDM 210 A
Current
Current Limited by Package TA = 25°C IDmax 100 A
OR |
3.5. ntmfs4935n.pdf Size:115K _onsemi  |
 | 100°C 8.2
(Note 2) 1
S D
4935N
S
Power Dissipation TA = 25°C PD 0.93 W
SO-8 FLAT LEAD
AYWWG
RqJA (Note 2) S
CASE 488AA
G
G D
STYLE 1
Continuous Drain TC = 25°C ID 93 A
D
Current RqJC
TC = 85°C 59
(Note 1)
A = Assembly Location
Power Dissipation TC = 25°C PD 48 W
Y = Year
RqJC (Note 1)
WW = Work Week
Pulsed Drain TA = 25°C, tp = 10 ms IDM 275 A
G = Pb-Free Package
Current
(Note: Microdot may be in either location)
Current Limited by Package TA = 25°C IDmax 100 A
Operat |
3.6. ntmfs4921n.pdf Size:117K _onsemi  |
 | 921N
Current RqJA
S
TA = 85°C 6.4
AYWWG
(Note 2)
SO-8 FLAT LEAD
S
G
CASE 488AA
Power Dissipation TA = 25°C PD 0.87 W
G D
RqJA (Note 2) STYLE 1
D
Continuous Drain TC = 25°C ID 58.5 A
A = Assembly Location
Current RqJC
TC = 85°C 42.3
Y = Year
(Note 1)
WW = Work Week
Power Dissipation TC = 25°C PD 38.5 W
G = Pb-Free Package
RqJC (Note 1)
(Note: Microdot may be in either location)
Pulsed Drain tp=10ms TA = 25°C IDM 117 A
Current
Current limited by package TA = 25°C IDmaxpk |
3.7. ntmfs4927-d.pdf Size:112K _onsemi  |
 |
SO-8 FLAT LEAD AYWWG
State
Continuous Drain TA = 25°C ID 7.9 A S
CASE 488AA G
Current RqJA
G D
TA = 100°C 5.0
STYLE 1
(Note 2)
D
Power Dissipation TA = 25°C PD 0.92 W
RqJA (Note 2)
A = Assembly Location
Y = Year
Continuous Drain TC = 25°C ID 38 A
WW = Work Week
Current RqJC
TC =100°C 24
(Note 1) G = Pb-Free Package
(Note: Microdot may be in either location)
Power Dissipation TC = 25°C PD 20.8 W
RqJC (Note 1)
Pulsed Drain TA = 25°C, tp = 10 ms IDM 160 A
ORDERING INFORMATIO |
3.8. ntmfs4925n-d.pdf Size:112K _onsemi  |
 | SO-8 FLAT LEAD
AYWWG
State
Continuous Drain TA = 25°C ID 9.7 A S
CASE 488AA
G
Current RqJA
G D
STYLE 1
TA = 100°C 6.2
(Note 2)
D
Power Dissipation TA = 25°C PD 0.92 W
RqJA (Note 2)
A = Assembly Location
Y = Year
Continuous Drain TC = 25°C ID 48 A
WW = Work Week
Current RqJC
TC =100°C 30
(Note 1) G = Pb-Free Package
(Note: Microdot may be in either location)
Power Dissipation TC = 25°C PD 23.2 W
RqJC (Note 1)
Pulsed Drain TA = 25°C, tp = 10 ms IDM 195 A
ORDERING INFORMATI |
Anderen MOSET... NTMFS4926N
, NTMFS4927N
, NTMFS4933N
, NTMFS4934N
, NTMFS4935N
, NTMFS4936N
, NTMFS4937N
, NTMFS4939N
, IRF3205
, NTMFS4943N
, NTMFS5830NL
, NTMFS5832NL
, NTMFS5834NL
, NTMFS5844NL
, NTMS10P02
, NTMS4176P
, NTMS4177P
.
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