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NTMS4807N
MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt. Typenbezeichnung: NTMS4807N
Typ von Feldeffekttransistors: MOSFET
Kanaltyp: N
Gesamt-Verlustleistung (Pd): 0.86
Maximale Drain-Source-Spannung (Uds): 30V
Maximale Gate-Source-Spannung (Ugs): 20
Maximaler Drainstrom (Id): 12.2
Höchste Sperrschichttemperatur (Tj), °C:
Anstiegszeit (tr):
Drain-Kapazität (Cd), pF:
Ausgangswiderstand (Rds), Ohm: 40.548
Transistorgehäuse: SOIC8
Ersatz (vergleichstyp) für NTMS4807N
Transistor NTMS4807N
- PDF-Dokument zum Download bereitstellen...
1.1. ntms4807n-d.pdf  Size:88K _onsemi  |
 | °C 11.8
(Note 1)
Gate Drain
STYLE 12
Top View
Power Dissipation TA = 25°C PD 2.3 W
RqJA, t v 10 s(Note 1)
4807N = Device Code
Pulsed Drain Current TA = 25°C, tp = 10 ms IDM 50 A
A = Assembly Location
Y = Year
Operating Junction and Storage Temperature TJ, -55 to °C
WW = Work Week
Tstg 150
G = Pb-Free Package
Source Current (Body Diode) IS 2.9 A
(Note: Microdot may be in either location)
Single Pulse Drain-to-Source Avalanche Energy EAS 98 mJ
(TJ = 25°C, VDD = 30 V, VGS = 10 V, |
3.1. ntms4801n.pdf Size:135K _onsemi  |
 | 10 s
STYLE 12
TA = 70°C 9.6
(Note 1) Top View
Power Dissipation TA = 25°C PD 2.1 W
4801N = Device Code
RqJA, t v 10 s(Note 1)
A = Assembly Location
Y = Year
Pulsed Drain Current TA = 25°C, tp = 10 ms IDM 35 A
WW = Work Week
Operating Junction and Storage Temperature TJ, -55 to °C
G = Pb-Free Package
Tstg 150
(Note: Microdot may be in either location)
Source Current (Body Diode) IS 2.1 A
Single Pulse Drain-to-Source Avalanche Energy EAS 98 mJ
ORDERING INFORMATION
(TJ = 25°C, V |
3.2. ntms4802n.pdf Size:111K _onsemi  |
 | 10 s
STYLE 12
TA = 70°C 15
(Note 1) Top View
Power Dissipation TA = 25°C PD 2.5 W
4802N = Device Code
RqJA, t v 10 s(Note 1)
A = Assembly Location
Y = Year
Pulsed Drain Current TA = 25°C, tp = 10 ms IDM 60 A
WW = Work Week
Operating Junction and Storage Temperature TJ, -55 to °C
G = Pb-Free Package
Tstg 150
(Note: Microdot may be in either location)
Source Current (Body Diode) IS 2.5 A
Single Pulse Drain-to-Source Avalanche Energy EAS 420 mJ
ORDERING INFORMATION
(TJ = 25°C, VD |
3.3. ntms4800n.pdf Size:136K _onsemi  |
 | Current RqJA, t < 10 s
Gate Drain
STYLE 12
TA = 70°C 6.4
(Note 1)
Top View
Power Dissipation TA = 25°C PD 2.0 W
4800N = Device Code
RqJA, t < 10 s (Note 1)
A = Assembly Location
Pulsed Drain Current TA = 25°C, tp = 10 ms IDM 32 A
Y = Year
WW = Work Week
Operating Junction and Storage Temperature TJ, -55 to °C
G = Pb-Free Package
Tstg +150
(Note: Microdot may be in either location)
Source Current (Body Diode) IS 2.0 A
Single Pulse Drain-to-Source Avalanche Energy EAS 60.5 mJ
( |
Anderen MOSET... NTMFS5844NL
, NTMS10P02
, NTMS4176P
, NTMS4177P
, NTMS4503N
, NTMS4800N
, NTMS4801N
, NTMS4802N
, IRF540N
, NTMS4816N
, NTMS4873NF
, NTMS4916N
, NTMS4917N
, NTMS4920N
, NTMS4937N
, NTMS4939N
, NTMS5835NL
.
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