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IXFR44N80P
MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt. Typenbezeichnung: IXFR44N80P
Typ von Feldeffekttransistors: MOSFET
Kanaltyp: N
Gesamt-Verlustleistung (Pd): 360
Maximale Drain-Source-Spannung (Uds): 800V
Maximale Gate-Source-Spannung (Ugs):
Maximaler Drainstrom (Id): 26
Höchste Sperrschichttemperatur (Tj), °C:
Anstiegszeit (tr): 250ns
Drain-Kapazität (Cd), pF:
Ausgangswiderstand (Rds), Ohm: 0.19
Transistorgehäuse: ISOPLUS247
Ersatz (vergleichstyp) für IXFR44N80P
Transistor IXFR44N80P
- PDF-Dokument zum Download bereitstellen...
1.1. ixfr44n80p.pdf  Size:101K _ixys  |
 | s 300 °C
Rugged polysilicon gate cell structure
TSOLD Plastic body for 10 seconds 260 °C
Unclamped Inductive Switching (UIS)
VISOL 50/60 Hz, RMS, 1 minute 2500 V~
rated
Fast intrinsic Rectifier
FC Mounting force 20..120 /4.5..25 N/lb
Applications
Weight 5g
DC-DC converters
Battery chargers
Symbol Test Conditions Characteristic Values
Switched-mode and resonant-mode
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
power supplies
DC choppers
BVDSS VGS = 0 |
3.1. ixfr44n60.pdf Size:34K _ixys  |
 | ght 5 g
• Unclamped Inductive Switching (UIS)
rated
• Fast intrinsic Rectifier
Applications
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
• DC-DC converters
min. typ. max.
• Battery chargers
• Switched-mode and resonant-mode
VDSS VGS = 0 V. ID = 250mA 600 V
power supplies
• DC choppers
VGS(th) VDS = VGS. ID = 4mA 2.5 4.5 V
• AC & DC motor control
IGSS VGS = ±20 V, VDS = 0 ±100 nA
Advantages
IDSS VDS = VDSS TJ = 25°C 100 mA
• Easy assembly |
3.2. ixfr44n50p.pdf Size:153K _ixys  |
 | ounting surface
- 2500V electrical isolation
VISOL 50/60 Hz, RMS, 1 minute 2500 V~ l
Unclamped Inductive Switching (UIS)
rated
FC Mounting Force 20..120 / 4.5..25 N/lb
l
Low package inductance
Weight 5g - easy to drive and to protect
l
Fast intrinsic diode
Advantages
Symbol Test Conditions Characteristic Values
l
Easy to mount
(TJ = 25° C, unless otherwise specified) Min. Typ. Max.
l
Space savings
l
BVDSS VGS = 0 V, ID = 250 µA 500 V
High power density
VGS(th) VDS = VGS, ID |
Anderen MOSET... IXFR36N50P
, IXFR36N60P
, IXFR38N80Q2
, IXFR40N50Q2
, IXFR40N90P
, IXFR44N50P
, IXFR44N50Q
, IXFR44N60
, 2N7000
, IXFR48N50Q
, IXFR48N60P
, IXFR48N60Q3
, IXFR4N100Q
, IXFR64N50P
, IXFR64N50Q3
, IXFR64N60P
, IXFR64N60Q3
.
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