2N189 . Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: 2N189

Werkstoff: Ge

Polarity: PNP

Gesamt-Verlustleistung (Pc): 0.2

Kollektor-Basis-Sperrspannung (Ucb): 25

Kollektor-Emitter-Sperrspannung (Uce): 0

Emitter-Basis-Sperrspannung (Ueb): 5

Kollektorstrom (Ic): 0.2

Höchste Sperrschichttemperatur (Tj), °C: 85

Transitfrequenz (ft): 0.3

Kollektor-Kapazität (Cc), pF: 80

Kurzschluss-Stromverstärkung (hfe): 35

Transistorgehäuse: R32

Ersatz (vergleichstyp) für 2N189

2N189 - PDF-Dokument zum Download bereitstellen...

1.1. 2n1893.pdf Size:663K _rca

1.2. 2n189_2n190_2n191_2n192.pdf Size:343K _general_electric

1.3. 2n186-a_2n187-a_2n188-a_2n189_2n190_2n191_2n192.pdf Size:384K _general_electric

1.4. 2n1893_cnv_2.pdf Size:51K _philips

hilips Semiconductors Product specification NPN medium power transistor 2N1893 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter - 120 V VCEO collector-emitter voltage open base - 80 V VEBO emitter-base voltage open collector - 7 V IC collector current (DC) - 500 mA ICM peak collector current - 1 A IBM peak base current - 200 mA Ptot total power dissipation Tamb ? 25 °C -

1.5. 2n1893.pdf Size:311K _st

nction-Case Max 50 C/W o R Thermal Resistance Junction-Ambient Max 187.5 C/W thj-amb ELECTRICAL CHARACTERISTICS (T = 25 oC unless otherwise specified) case Symbol Parameter Test Conditions Min. Typ. Max. Unit I Collector Cut-off V = 90 V 10 nA CBO CB Current (IE = 0) VCB = 90 V TC = 150 oC 15 µA I Emitter Cut-off Current V = 5 V 10 nA EBO EB (IC = 0) V Collector-Base I = 100 µA 120 V (BR)CBO C Breakdown Voltage (I = 0) E V ? Collector-Emitter I = 10 mA 100 V (BR)CER C Break

1.6. 2n1613_2n1711_2n1893.pdf Size:64K _central

1.7. 2n1893_2n720a.pdf Size:55K _microsemi

ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage V Vdc (BR) CEO IC = 30 mAdc 80 Collector-Emitter Breakdown Voltage V(BR)CER Vdc IC = 10 mAdc, RBE = 10 ? 100 Collector-Base Cutoff Current µAdc VCB = 120 Vdc ICBO 10 ?Adc VCB = 90 Vdc 10 Emitter-Base Cutoff Current µAdc VEB = 7.0 Vdc IEBO 10 ?Adc VEB = 5.0 Vdc 10 6 Lake Street, Lawrence, MA 0

Anderen transistoren... 2N1868 , 2N186A , 2N187 , 2N187A , 2N188 , 2N1886 , 2N1889 , 2N188A , BC109C , 2N1890 , 2N1890S , 2N1891 , 2N1892 , 2N1893 , 2N1893-46 , 2N1893A , 2N1893L .