2N222 >> Datenblatt. Höchstzulässige Werte. Charakteristische Werte

lector�Base Breakdown Voltage V(BR)CBO 75 � Vdc (IC = 10 mAdc, IE = 0) Emitter�Base Breakdown Voltage V(BR)EBO 6.0 � Vdc (IE = 10 mAdc, IC = 0) Collector Cutoff Current ICEX � 10 nAdc (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) Collector Cutoff Current ICBO �Adc (VCB = 60 Vdc, IE = 0) � 0.01 (VCB = 60 Vdc, IE = 0, TA = 150�C) � 10 Emitter Cutoff Current IEBO � 10 nAdc (VEB = 3.0 Vdc, IC = 0) Collector Cutoff Current ICEO � 10 nAdc (VCE = 10 V) Base Cutoff Current IBEX � 20 nAdc (VCE = 60 Vd

1.2. mtp2n2222a.pdf Size:238K _motorola

1.3. 2n2222_2n2222a_cnv_2.pdf Size:53K _philips

A; VCE =10V 75 - fT transition frequency IC = 20 mA; VCE = 20 V; f = 100 MHz 2N2222 250 - MHz 2N2222A 300 - MHz toff turn-off time ICon = 150 mA; IBon = 15 mA; IBoff = -15 mA - 250 ns 1997 May 29 2 Philips Semiconductors Product specification NPN switching transistors 2N2222; 2N2222A LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter 2N2222 - 60 V 2N2222A - 75 V VCEO c

1.4. 2n2218-2n2219-2n2221-2n2222.pdf Size:71K _st

2N2222 1.8 W Tstg Storage Temperature � 65 to 200 �C T Junction Temperature 175 �C j January 1989 1/5 2N2218-2N2219-2N2221-2N2222 THERMAL DATA 2N2218 2N2221 2N2219 2N2222 Rth j-case Thermal Resistance Junction-case Max 50 �C/W 83.3 �C/W Rth j-amb Thermal Resistance Junction-ambient Max 187.5 �C/W 300 �C/W ELECTRICAL CHARACTERISTICS (Tamb = 25 �C unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICBO Collector Cutoff Current VCB = 50 V 10 nA (IE =0)

1.5. 2n2219a_2n2222a.pdf Size:166K _st

A / 2N2222A THERMAL DATA TO-39 TO-18 o Rthj-case Thermal Resistance Junction-Case Max 50 83.3 C/W o R Thermal Resistance Junction-Ambient Max 187.5 300 C/W thj-amb ELECTRICAL CHARACTERISTICS (T = 25 oC unless otherwise specified) case Symbol Parameter Test Conditions Min. Typ. Max. Unit ICBO Collector Cut-off VCB = 60 V 10 nA Current (IE = 0) VCB = 60 V Tj = 150 oC 10 �A ICEX Collector Cut-off VCE = 60 V 10 nA Current (VBE = -3V) I Base Cut-off Current V = 60 V 20 nA BEX CE (VB

1.6. 2n2222a_2n2219a.pdf Size:168K _st

1.7. 2n2221a_2n2222a.pdf Size:116K _central

3 V VCE(SAT) IC=500mA, IB=50mA 1.0 1.0 V VBE(SAT) IC=150mA, IB=15mA 0.6 1.2 0.6 1.2 V VBE(SAT) IC=500mA, IB=50mA 2.0 2.0 V hFE VCE=10V, IC=0.1mA 20 35 hFE VCE=10V, IC=1.0mA 25 50 hFE VCE=10V, IC=10mA 35 75 hFE VCE=10V, IC=10mA, TA=-55�C 15 35 hFE VCE=10V, IC=150mA 40 120 100 300 hFE VCE=1.0V, IC=150mA 20 50 hFE VCE=10V, IC=500mA 25 40 (Continued) R2 2N2221A / 2N2222A NPN SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS: Continued 2N2221A 2N2222A SYMBOL TE

1.8. 2n2222_2n2222a(to-18).pdf Size:232K _mcc

lectrical Characteristics @ 25OC Unless Otherwise Specified Symbol Parameter Min Max Units OFF CHARACTERISTICS Collector cut-off current (VCB=50Vdc, IE=0) 2N2222 --- 10 nAdc ICBO (VCB=50Vdc, IE=0,TA=150 ) --- 10 uAdc (VCB=60Vdc, IE=0) 2N2222A --- 10 nAdc DIMENSIONS (VCB=60Vdc, IE=0,TA=150 ) --- 10 uAdc INCHES MM --- 10 nAdc IEBO Emitter Cut-off current DIM MIN MAX MIN MAX NOTE (IC=0, VEB=3Vdc) A .209 .230 5.309 5.842 ? DC Current Gain B .178 .195 4.521 4.953 ? (IC=0.1m

1.9. p2n2222a-d.pdf Size:164K _onsemi

ional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. P2N2 222A AYWW G G A = Assembly Location Y = Year WW = Work Week G = Pb--Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping� P2N2222AG TO--92 5000 Units/Bulk (Pb--Free) P2N2222ARL1G TO--92 2000/Tape & Ammo (Pb--Free) �For information on tape and reel sp

1.10. 2n2222aua.pdf Size:186K _optek

1.11. 2n2222aub.pdf Size:250K _optek

. . . -65o C to +200o C stg �Same footprint and pin-out as many Power Dissipation @ T = 25o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.3 W SOT-23 package transistors A Power Dissipation @ T = 25o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.16 W(1) C Description Soldering Temperature (vapor phase reflow for 30 sec.) . . . . . . . . . . . . . . . . . 215o C Soldering Temperature (heated collet for 5 sec.) . . . . . . . . . . .

1.12. 2n2223a.pdf Size:18K _semelab

ation @ TC = 25�C 1.6W 3.0W Derate above 25�C 9.1mW/�C 11.4mW/�C Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Prelim. 5/98 E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Min. 6.60 (0.260) 12.7 (0.500) 6.10 (0.240) 2N2223A SEME LAB ELECTRICAL CHARACTERISTICS (TA = 25�C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit OFF CHARACTERISTICS VCER(sus)* Collector � Emitter Breakdown Voltage IC = 100mA RBE 10 80 V VCEO(sus)* Colle

1.13. 2n2221.pdf Size:10K _semelab

responsibility for any errors or omissions discovered in its use. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Generated 2-Aug-02 E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk

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