2SD2136 . Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: 2SD2136

Werkstoff: Si

Polarity: NPN

Gesamt-Verlustleistung (Pc): 1.5

Kollektor-Basis-Sperrspannung (Ucb): 60

Kollektor-Emitter-Sperrspannung (Uce): 0

Emitter-Basis-Sperrspannung (Ueb): 0

Kollektorstrom (Ic): 3

Höchste Sperrschichttemperatur (Tj), °C: 150

Transitfrequenz (ft):

Kollektor-Kapazität (Cc), pF:

Kurzschluss-Stromverstärkung (hfe): 30

Transistorgehäuse: TO126

Ersatz (vergleichstyp) für 2SD2136

2SD2136 - PDF-Dokument zum Download bereitstellen...

1.1. 2sd2136.pdf Size:86K _panasonic

er voltage (Base open) VCEO IC = 30 mA, IB = 060V Base-emitter voltage *1 VBE VCE = 4 V, IC = 3 A 1.8 V Collector-emitter cutoff current (Emitter-base short) ICES VCE = 60 V, VBE = 0 200 µA Collector-emitter cutoff current (Base open) ICEO VCE = 30 V, IB = 0 300 µA Emitter-base cutoff current (Collector open) IEBO VEB = 6 V, IC = 01 mA Forward current transfer ratio hFE1 *2 VCE = 4 V, IC = 1 A 40 250 ? hFE2 *1 VCE = 4 V, IC = 3 A 10 Collector-emitter saturation voltage *1 VCE(sat) IC = 3

4.1. 2sd2130.pdf Size:209K _toshiba

°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 45 V, IE = 0 ? ? 10 µA Emitter cut-off current IEBO VEB = 6 V, IC = 0 0.6 ? 2.0 mA Collector-base breakdown voltage V (BR) CBO IC = 10 mA, IE = 0 50 60 70 V Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 50 60 70 V Emitter-base breakdown voltage V (BR) EBO IE = 10 mA, IC = 0 6 ? ? V hFE (1) VCE = 2 V, IC = 1 A 2000 ? 15000 DC current gain hFE (2) VCE = 2 V, IC = 3 A 1000

4.2. 2sd2131.pdf Size:240K _toshiba

4.3. 2sd2138.pdf Size:61K _panasonic

max Unit Collector cutoff 2SD2138 VCE = 60V, IE = 0 100 ICBO µ A current 2SD2138A VCE = 80V, IE = 0 100 Collector cutoff 2SD2138 VCE = 30V, IB = 0 100 ICEO µ A current 2SD2138A VCE = 40V, IB = 0 100 Emitter cutoff current IEBO VEB = 5V, IC = 0 100 µ A Collector to emitter 2SD2138 60 VCEO IC = 30mA, IB = 0 V voltage 2SD2138A 80 hFE1 VCE = 4V, IC = 1A 1000 Forward current transfer ratio hFE2* VCE = 4V, IC = 2A 2000 10000 Base to emitter voltage VBE VCE = 4V, IC = 2A 2.8 V Collector

4.4. 2sd2137.pdf Size:54K _panasonic

min typ max Unit Collector cutoff 2SD2137 VCE = 60V, VBE = 0 100 ICES µ A current 2SD2137A VCE = 80V, VBE = 0 100 Collector cutoff 2SD2137 VCE = 30V, IB = 0 100 ICEO µ A current 2SD2137A VCE = 60V, IB = 0 100 Emitter cutoff current IEBO VEB = 6V, IC = 0 100 µ A Collector to emitter 2SD2137 60 VCEO IC = 30mA, IB = 0 V voltage 2SD2137A 80 hFE1* VCE = 4V, IC = 1A 70 250 Forward current transfer ratio hFE2 VCE = 4V, IC = 3A 10 Base to emitter voltage VBE VCE = 4V, IC = 3A 1.8 V Collec

4.5. 2sd2133.pdf Size:96K _panasonic

se voltage (Collector open) VEBO IE = 10 µA, IC = 0 5 V Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0 0.1 µA Forward current transfer ratio hFE1 *1, 2 VCE = 10 V, IC = 0.5 A 85 340 ? hFE2 *1 VCE = 5 V, IC = 1 A 50 100 hFE3 VCE = 10 V, IC = 1 mA 35 Collector-emitter saturation voltage VCE(sat) IC = 500 mA, IB = 50 mA 0.2 0.4 V Base-emitter saturation voltage VBE(sat) IC = 500 mA, IB = 50 mA 0.85 1.20 V Transition frequency fT VCB = 10 V, IE = -50 mA, f = 200 MHz 200

4.6. 2sd2139.pdf Size:50K _panasonic

off current ICEO VCE = 40V, IB = 0 100 µ A Emitter cutoff current IEBO VEB = 6V, IC = 0 100 µ A Collector to emitter voltage VCEO IC = 25mA, IB = 0 60 V Forward current transfer ratio hFE* VCE = 4V, IC = 0.5A 500 2500 Collector to emitter saturation voltage VCE(sat) IC = 2A, IB = 0.05A 1 V Transition frequency fT VCE = 12V, IC = 0.2A, f = 10MHz 50 MHz * hFE Rank classification Rank Q P O hFE 500 to 1000 800 to 1500 1200 to 2500 1 4.2 ± 0.2 2.5 ± 0.2 18.0 ± 0.5 13.0 ± 0.2

4.7. 2sd2137_to-220f.pdf Size:161K _lge

IE=0 100 ВµA Collector cut-off current ICEO VCE=30V, IB=0 100 ВµA Emitter cut-off current IEBO VEB=6V, IC=0 100 ВµA hFE(1) VCE=4V, IC=1A 70 320 DC current gain hFE(2) VCE=4V, IC=3A 10 Collector-emitter saturation voltage VCE(sat) IC=3A, IB=375mA 1.2 V Base-emitter voltage VBE VCE=4V, IC=3A 1.8 V Transition frequency fT VCE=5V, IC=0.2A, f=10MHz 30 MHz Turn-on time ton 0.3 Вµs Switch time Storage time tstg VCC=50V,IC=1A, IB1=-IB2=0.1A 2.5 Вµs Fall time tf 0.2 Вµs CLASSIFI

4.8. 2sd2137.pdf Size:233K _lge

E=0 100 ?A Emitter cut-off current IEBO VEB=6V, IC=0 100 ?A hFE(1) VCE=4V, IC=1A 70 320 DC current gain hFE(2) VCE=4V, IC=3A 10 Collector-emitter saturation voltage VCE(sat) IC=3A, IB=375mA 1.2 V Base-emitter voltage VBE VCE=4V, IC=3A 1.8 V Transition frequency fT VCE=5V, IC=0.2A, f=10MHz 30 MHz Turn-on time ton 0.3 ?s Switch time Storage time tstg VCC=50V,IC=1A, IB1=-IB2=0.1A 2.5 ?s Fall time tf 0.2 ?s CLASSIFICATION OF hFE(1) Rank Q P O Range 70-150 120-250 160-320  2SD2

Anderen transistoren... 2SD2129 , 2SD213 , 2SD2130 , 2SD2131 , 2SD2132 , 2SD2133 , 2SD2134 , 2SD2135 , 9013 , 2SD2137 , 2SD2138 , 2SD2139 , 2SD214 , 2SD2140 , 2SD2141 , 2SD2144 , 2SD2148 .