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9014 . Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: 9014

Werkstoff: Si

Polarity: NPN

Gesamt-Verlustleistung (Pc): 0.315

Kollektor-Basis-Sperrspannung (Ucb): 45

Kollektor-Emitter-Sperrspannung (Uce): 45

Emitter-Basis-Sperrspannung (Ueb): 5

Kollektorstrom (Ic): 0.1

Höchste Sperrschichttemperatur (Tj), °C: 135

Transitfrequenz (ft): 150

Kollektor-Kapazität (Cc), pF: 3.5

Kurzschluss-Stromverstärkung (hfe): 64

Transistorgehäuse: TO92

Ersatz (vergleichstyp) für 9014

 

9014 PDF doc:

1.1. ss9014.pdf Size:38K _fairchild_semi

9014
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SS9014 Pre-Amplifier, Low Level & Low Noise High total power dissipation. (PT=450mW) High hFE and good linearity Complementary to SS9015 TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-B

1.2. irfd9014pbf.pdf Size:1819K _international_rectifier

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PD- 95925 IRFD9014PbF Lead-Free 10/27/04 Document Number: 91136 www.vishay.com 1 IRFD9014PbF Document Number: 91136 www.vishay.com 2 IRFD9014PbF Document Number: 91136 www.vishay.com 3 IRFD9014PbF Document Number: 91136 www.vishay.com 4 IRFD9014PbF Document Number: 91136 www.vishay.com 5 IRFD9014PbF Document Number: 91136 www.vishay.com 6 IRFD9014PbF Peak Diode Recove

1.3. irfd9014.pdf Size:177K _international_rectifier

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1.4. irfl9014.pdf Size:222K _international_rectifier

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PD - 90863A IRFL9014 HEXFET Power MOSFET Surface Mount Available in Tape & Reel D VDSS = -60V Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel RDS(on) = 0.50? Fast Switching G Ease of Paralleling ID = -1.8A S Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design

1.5. irfr9014.pdf Size:177K _international_rectifier

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1.6. irfl9014pbf.pdf Size:256K _international_rectifier

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PD - 95153 IRFL9014PbF HEXFET Power MOSFET l Surface Mount l Available in Tape & Reel D VDSS = -60V l Dynamic dv/dt Rating l Repetitive Avalanche Rated l P-Channel RDS(on) = 0.50? l Fast Switching G l Ease of Paralleling l Lead-Free ID = -1.8A S Descripti?n Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, rug

1.7. irfr9014pbf_irfu9014pbf.pdf Size:1864K _international_rectifier

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PD- 95383A IRFR9014PbF IRFU9014PbF Lead-Free 12/07/04 Document Number: 91277 www.vishay.com 1 IRFR/U9014PbF Document Number: 91277 www.vishay.com 2 IRFR/U9014PbF Document Number: 91277 www.vishay.com 3 IRFR/U9014PbF Document Number: 91277 www.vishay.com 4 IRFR/U9014PbF Document Number: 91277 www.vishay.com 5 IRFR/U9014PbF Document Number: 91277 www.vishay.com 6 IRFR/U

1.8. ss9014.pdf Size:47K _samsung

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SS9014 NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE TO-92 High total power dissipation. (PT=450mW) High hFE and good linearity Complementary to SS9015 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit V Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 45 V Emitter-Base Voltage VEBO 5 mA Collector Current IC 100 mW

1.9. sfr9014.pdf Size:495K _samsung

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Advanced Power MOSFET FEATURES BVDSS = -60 V Avalanche Rugged Technology RDS(on) = 0.5 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = -5.3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -60V Lower RDS(ON) : 0.362 ? (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteris

1.10. sfm9014.pdf Size:949K _samsung

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Advanced Power MOSFET FEATURES BVDSS = -60 V Avalanche Rugged Technology RDS(on) = 0.5 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = -1.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -60V 2 Lower RDS(ON) : 0.362 ? (Typ.) 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Un

1.11. irfr9014_irfu9014_sihfr9014_sihfu9014_2.pdf Size:1891K _vishay

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IRFR9014, IRFU9014, SiHFR9014, SiHFU9014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) - 60 Definition Dynamic dV/dt Rating RDS(on) (?)VGS = - 10 V 0.50 Repetitive Avalanche Rated Qg (Max.) (nC) 12 Surface Mount (IRFR9014, SiHFR9014) Qgs (nC) 3.8 Straight Lead (IRFU9014, SiHFU9014) Available in Tape and Reel Qgd (

1.12. irfl9014_sihfl9014.pdf Size:168K _vishay

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IRFL9014, SiHFL9014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 60 Surface Mount RDS(on) (?)VGS = - 10 V 0.50 Available in Tape and Reel Qg (Max.) (nC) 12 Dynamic dV/dt Rating Qgs (nC) 3.8 Repetitive Avalanche Rated P-Channel Qgd (nC) 5.1 Fast Switching Configuration Single Ease of Paralleli

1.13. irfr9014_irfu9014_sihfr9014_sihfu9014.pdf Size:2009K _vishay

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IRFR9014, IRFU9014, SiHFR9014, SiHFU9014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 60 Available Repetitive Avalanche Rated RDS(on) (?)VGS = - 10 V 0.50 RoHS* Surface Mount (IRFR9014/SiHFR9014) COMPLIANT Qg (Max.) (nC) 12 Straight Lead (IRFU9014/SiHFU9014) Qgs (nC) 3.8 Available in Tape and Reel Qgd (nC) 5.1 P-Channel Confi

1.14. irfd9014_sihfd9014.pdf Size:1750K _vishay

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IRFD9014, SiHFD9014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 60 Repetitive Avalanche Rated Available RDS(on) (?)VGS = - 10 V 0.50 For Automatic Insertion RoHS* Qg (Max.) (nC) 12 COMPLIANT End Stackable Qgs (nC) 3.8 P-Channel Qgd (nC) 5.1 175 C Operating Temperature Configuration Single Fast Switching S Compliant to

1.15. mmbt9014.pdf Size:125K _utc

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UNISONIC TECHNOLOGIES CO., LTD MMBT9014 NPN SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE FEATURES * High Total Power Dissipation. (450mW) * Excellent hFE Linearity. * Complementary to UTC MMBT9015 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 MMBT9014G-x-AE3-R MMBT9014G-x-AE3-R SOT-23 E B C Tape Reel MARKI

1.16. 9014.pdf Size:63K _utc

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UNISONIC TECHNOLOGIES CO., LTD 9014 NPN SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE FEATURES * High total power dissipation. (450mW) * Excellent hFE linearity. * Complementary to UTC 9015 *Pb-free plating product number: 9014L ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Normal Lead Free Plating 1 2 3 9014-x-T92-B 9014L-x-T92-B TO-92 E

1.17. sts9014.pdf Size:207K _auk

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STS9014 NPN Silicon Transistor Description PIN Connection • General purpose application C • Switching application Features B • Excellent hFE linearity : hFE(IC=0.1 mA) / hFE(IC=2 mA) = 0.95(Typ.) • Low noise : NF=10dB(Max.) at f=1KHz E • Complementary pair with STS9015 TO-92 Ordering Information Type NO. Marking Package Code STS9014 STS9014 TO-92 Abso

1.18. s9014.pdf Size:253K _secos

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S9014 NPN Silicon Elektronische Bauelemente Pre-Amplifier, Low Level & Low Noise RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-23 FEATURES Collector ? Dim Min Max 3 3 ? A 2.800 3.040 B 1.200 1.400 Power dissipation 1 1 ? C 0.890 1.110 2 Base PCM : 0.2 W D 0.370 0.500 Collector Current G 1.780 2.040 2 ICM : 0.1 A A Emitter H 0.013 0.100 L Co

1.19. s9014t.pdf Size:130K _secos

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S9014T NPN Silicon Elektronische Bauelemente Pre-Amplifier, Low Level & Low Noise RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 FEATURES 4.55±0.2 3.5±0.2 ? Power dissipation ? PCM : 0.4 W Collector current ICM : 0.1 A Collector-base voltage V(BR)CBO : 50 V 0.43+0.08 –0.07 46+0.1 0. –0.1 Operating & storage junction temperature (1.27 Typ.)

1.20. s9014w.pdf Size:263K _secos

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S9014W NPN Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 FEATURE Complementary to S9015W A L 3 3 Top View C B 1 1 2 2 K E PACKAGING INFORMATION Weight: 0.0074 g D Collector H J F G 3 Millimeter Millimeter REF. REF. Min. Max. Min. Max. MARKING CODE 1 A 1.80

1.21. cd9014.pdf Size:176K _cdil

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR CD9014 TO-92 CBE ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector -Emitter Voltage VCEO 50 V Collector -Base Voltage VCBO 50 V Emitter Base Voltage VEBO 5.0 V Collector Current IC 100 mA Collector Power Dissipation PC 625 mW Operating And Storage Junc

1.22. cmbt9014.pdf Size:128K _cdil

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR CMBT9014 PIN CONFIGURATION (NPN) SOT-23 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage VCBO 30 V Collector -Emitter Voltage VCEO 30 V Emitter Base Voltage VEBO 5.0 V Colle

1.23. ktc9014.pdf Size:349K _kec

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SEMICONDUCTOR KTC9014 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES ·Excellent hFE Linearity : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). N DIM MILLIMETERS ·Low Noise :NF=1dB(Typ.) at f=1kHz. A 4.70 MAX E K B 4.80 MAX ·Complementary to KTC9015. G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 _ MAXIMUM RATING

1.24. ktc9014s.pdf Size:396K _kec

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SEMICONDUCTOR KTC9014S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E L B L FEATURES DIM MILLIMETERS Excellent hFE Linearity _ A 2.93 0.20 + B 1.30+0.20/-0.15 : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). C 1.30 MAX 2 Low Noise :NF=1dB(Typ.) at f=1kHz. 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 Complementary to KTC9015S. 1 G 1.90 H 0

1.25. ktc9014a.pdf Size:343K _kec

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SEMICONDUCTOR KTC9014A TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES ·Excellent hFE Linearity : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). N DIM MILLIMETERS ·Low Noise :NF=1dB(Typ.) at f=1kHz. A 4.70 MAX E K B 4.80 MAX ·Complementary to KTC9015A. G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 _ MAXIMUM RATIN

1.26. s9014.pdf Size:821K _htsemi

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S901 4 TRANSISTOR (NPN) SOT-23 1. BASE FEATURES 2. EMITTER Complementary to S9015 3. COLLECTOR MARKING: J6 unless otherwise noted) MAXIMUM RATINGS (TA=25? Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.1 A PC Collector Power Dissipation 0.2 W Tj Jun

1.27. s9014w.pdf Size:458K _htsemi

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S901 4W TRANSISTOR(NPN) SOT–323 FEATURES ? Complementary to S9015W ? Small Surface Mount Package MAXIMUM RATINGS (Ta=25? unless otherwise noted) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage 50 V CBO 2. EMITTER V Collector-Emitter Voltage 45 V CEO 3. COLLECTOR V Emitter-Base Voltage 5 V EBO IC Collector Current 100 mA P Collector Power Dissipation 20

1.28. s9014.pdf Size:241K _gsme

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? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM9014 FEATURES ¦FEATURES ?? FEATURES Excellent HFE Linearity HFE ??????:HFE(0.1mA)/ hFE(2mA)=0.95(Typ.) High HFE ? HFE:HFE=200?700 Low Noise ???:NF=1dB(Typ.),10dB(Max.). Complementary to GM9015 ? GM9015 ?? MAXIMUM RATINGS (Ta=25 ) ¦MAX

1.29. s9014_to-92.pdf Size:190K _lge

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S9014(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features High total power dissipation.(PC=0.45W) High hFE and good linearity Complementary to S9015 MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V Dimensions in inches and (millimeters) VEBO Emit

1.30. s9014_sot-23.pdf Size:198K _lge

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S9014 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complementary to S9015 MARKING: J6 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.1 A PC Co

1.31. s9014.pdf Size:824K _wietron

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S9014 NPN General Purpose Transistors TO-92 1. EMITTER 1 2 2. BASE 3 3. COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol Value Unit Collector-Emitter Voltage V CEO 45 Vdc Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage VEBO 5.0 Vdc Collector Current IC 100 mAdc PD 0.4 Total Device Dissipation T =25 C W A Junction Temperature T 150 j C -55 to +150 Storage

1.32. s9014lt1.pdf Size:191K _wietron

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S9014LT1 3 1 2 SOT-23 Value V CEO 45 50 5.0 100 225 1.8 556 S9014QLT1=14Q S9014RLT1=14R S9014SLT1=14S S9014TLT1=14T 0.1 45 50 100 100 u 0.1 40 0.1 u 3.0 WEITRON 1/ 28-Apr-2011 http://www.weitron.com.tw S9014LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Max Unit Min ON CHARACTERISTICS DC Current Gain hFE 1000

1.33. 9014qlt1_9014rlt1_9014slt1_9014tlt1.pdf Size:305K _willas

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FM120-M WILLAS 9014xLT1 THRU General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produc Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H NPN Silicon • Low profile surface mounted application in order to opti

1.34. he9014.pdf Size:57K _hsmc

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Spec. No. : HE6102 HI-SINCERITY Issued Date : 1992.08.25 Revised Date : 2005.02.04 MICROELECTRONICS CORP. Page No. : 1/5 HE9014 NPN EPITAXIAL PLANAR TRANSISTOR Description The HE9014 is designed for use in pre-amplifier of low level and low noise. TO-92 Features • High Total Power Dissipation (PD: 450mW) • Complementary to HE9015 • High hFE and Good Linearity Absolute Maximum

1.35. btc9014a3.pdf Size:143K _cystek

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Spec. No. : C202A3 Issued Date : 2008.01.16 CYStech Electronics Corp. Revised Date : Page No. : 1 / 4 General Purpose NPN Epitaxial Planar Transistor BTC9014A3 Description • The BTC9014A3 is designed for use in pre-amplifier of low level and low noise. • Complementary to BTA9015A3. • Pb-free package Symbol Outline BTC9014A3 TO-92 B:Base C:Collector E:Emi

1.36. s9014.pdf Size:280K _can-sheng

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TO-92 Plastic-Encapsulate Transistors TO-92 Plastic-Encapsulate Transistors TO-92 Plastic-Encapsulate Transistors TO-92 Plastic-Encapsulate Transistors FEATURES High total power dissipation.(PC=0.45W) TO-92 High hFE and good linearity Complementary to S9015 MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS (TA=25℃ unless otherwise noted) MAXIMUM RATINGS 1.EMITTER Symbol Parameter

1.37. s9014_sot-23.pdf Size:317K _can-sheng

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 深圳市灿升实业发展有限公司 ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors S9014 TRANSISTOR (NPN) FEATURES Complimentary to S9015 MARKING:J6 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units (符号) (参数名称) (额定值) (单位) VCBO Collector-Base Vo

1.38. 9014w.pdf Size:658K _blue-rocket-elect

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9014

9014W(BR3DG9014W) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-323 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-323 Plastic Package. 特征 / Features P 大,h 高且特性好,与 9015W(BR3CG9015W)互补。 C FE High PC and hFE, excellent hFE linearity, complementary pair with 9015W(BR3CG9015W). 用途 / Applications 用于低电平、低噪声

1.39. 9014t.pdf Size:463K _blue-rocket-elect

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9014

9014T(BR3DG9014T) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-89 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-89 Plastic Package. 特征 / Features P 大,h 高而且特性好,与 9015T(BR3CG9015T)互补。 C FE High PC and hFE excellent hFE linearity, complementary pair with 9015T(BR3CG9015T). 用途 / Applications 用于低电平、低噪声

1.40. 9014m.pdf Size:680K _blue-rocket-elect

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9014

9014M(BR3DG9014M) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package. 特征 / Features P 大,h 高且特性好,与 9015M(BR3CG9015M)互补。 C FE High PC and hFE, excellent hFE linearity, complementary pair with 9015M(BR3CG9015M). 用途 / Applications 用于低电平、低噪声的

1.41. pj2n9014.pdf Size:100K _promax-johnton

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PJ2N9014 NPN Epitaxial Silicon Transistor PRE-APLIFIER, LOW LEVEL&LOW NOISE • High total power dissipation (PT=450mW) TO-92 SOT-23 • High h and good linearity FE • Complementary to PJ2N9015 ABSOLUTE MAXIMUM RATINGS (Ta= 25 °C) Rating Symbol Value Uint Pin : 1. Emitter Pin : 1. Base 2. Base Collector Base Voltage V 50 V 2.Emitter CBO 3. Collector 3.Collector

1.42. l9014qlt1g.pdf Size:105K _lrc

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LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon FEATURE L9014QLT1G Complementary to L9014. Series We declare that the material of product compliance with RoHS requirements. S-L9014QLT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Series DEVICE MARKING AND ORDERING IN

1.43. l9014tlt1g.pdf Size:99K _lrc

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LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon FEATURE Complementary to L9014. L9014QLT1G We declare that the material of product compliance with RoHS requirements. Series S- Prefix for Automotive and Other Applications Requiring Unique Site S-L9014QLT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Series DEVICE MARKING AND ORDERING IN

1.44. l9014slt1g.pdf Size:98K _lrc

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LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L9014QLT1G FEATURE Complementary to L9014. Series We declare that the material of product compliance with RoHS requirements. S-L9014QLT1G S- Prefix for Automotive and Other Applications Requiring Unique Site Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. DEVICE MARKING AND ORDERING INF

1.45. l9014rlt1g.pdf Size:99K _lrc

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LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon FEATURE Complementary to L9014. L9014QLT1G We declare that the material of product compliance with RoHS requirements. Series S- Prefix for Automotive and Other Applications Requiring Unique Site S-L9014QLT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Series DEVICE MARKING AND ORDERING IN

1.46. kst9014-d.pdf Size:1021K _kexin

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SMD Type Transistors SMD Type NPN Transistors KST9014-D SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Excellent hFE linearity Collector Current :IC=0.1A 1 2 +0.05 0.95+0.1 -0.1 0.1 -0.01 Complementary to KST9015-D 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 50 V Collector-E

1.47. kst9014.pdf Size:925K _kexin

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SMD Type Transistors SMD Type NPN Transistors KST9014 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Excellent hFE linearity Collector Current :IC=0.1A 1 2 +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 45 V Emit

1.48. s9014.pdf Size:347K _shenzhen-tuofeng-semi

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors S9014 TRANSISTOR (NPN) TO-92 FEATURES 1. EMITTER 2. BASE Power dissipation 3. COLLECTOR PCM: 0.4 W (Tamb=25℃) Collector current ICM: 0.1 A 1 2 3 Collector-base voltage V(BR)CBO: 50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

1.49. s9014lt1.pdf Size:588K _shenzhen-tuofeng-semi

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9014

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors S9014LT1 TRANSISTOR( NPN ) FEATURES · High total power dissipation.(pc=0.2w) ·Complementary to S9015LT1 MARKING: L6 J6 MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitt

Anderen transistoren... 9012G , 9012H , 9013 , 9013D , 9013E , 9013F , 9013G , 9013H , 2N60C , 9014D , 9014E , 9014F , 9014G , 9014H , 9015 , 9015A , 9015B .

 


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