BC337 >> Datenblatt. Höchstzulässige Werte. Charakteristische Werte

CEO Vdc (IC = 10 mA, IB = 0) BC337 45 � � BC338 25 � � Collector�Emitter Breakdown Voltage V(BR)CES Vdc (IC = 100 �A, IE = 0) BC337 50 � � BC338 30 � � Emitter�Base Breakdown Voltage V(BR)EBO 5.0 � � Vdc (IE = 10 mA, IC = 0) Collector Cutoff Current ICBO nAdc (VCB = 30 V, IE = 0) BC337 � � 100 (VCB = 20 V, IE = 0) BC338 � � 100 Collector Cutoff Current ICES nAdc (VCE = 45 V, VBE = 0) BC337 � � 100 (VCE = 25 V, VBE = 0) BC338 � � 100 Emitter Cutoff Current IEBO � � 100 nAdc (VEB =

1.2. bc337_bc338.pdf Size:119K _motorola

1.3. bc817_bc817w_bc337.pdf Size:236K _philips

p ? 300 ?s; ? ? 0.02. BC817; BC817W; BC337 NXP Semiconductors 45 V, 500 mA NPN general-purpose transistors 2. Pinning information Table 3. Pinning Pin Description Simplified outline Symbol SOT23 1base 3 3 2emitter 3 collector 1 12 2 sym021 SOT323 1base 3 3 2emitter 3 collector 1 2 sym021 12 sot323_so SOT54 1emitter 3 2base 3 collector 1 2 2 3 1 001aab347 sym026 SOT54A 1emitter 3 2base 3 collector 1 2 2 3 1 001aab348 sym026 SOT54 variant 1emitte

1.4. bc337_3.pdf Size:52K _philips

lector current - 1A IBM peak base current - 200 mA Ptot total power dissipation Tamb ? 25 �C; note 1 - 625 mW Tstg storage temperature -65 +150 �C Tj junction temperature - 150 �C Tamb operating ambient temperature -65 +150 �C Note 1. Transistor mounted on an FR4 printed-circuit board. 1999 Apr 15 2 Philips Semiconductors Product specification NPN general purpose transistor BC337 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction

1.5. bc337-25_bc337-40.pdf Size:66K _st

on Temperature 150 C 1/5 March 2003 Obsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s) BC337-25 / BC337-40 THERMAL DATA o Rthj-amb � Thermal Resistance Junction-Ambient Max 200 C/W o R � Thermal Resistance Junction-Case Max 83.3 C/W thj-case ELECTRICAL CHARACTERISTICS (T = 25 oC unless otherwise specified) case Symbol Parameter Test Conditions Min. Typ. Max. Unit I Collector Cut-off V = 20 V 100 nA CBO CB Current (IE = 0) VCB = 20 V TC = 150 oC

1.6. bc337-16_bc337-25.pdf Size:15K _fairchild_semi

al Device Dissipation 625 mW Derate above 25�C 5.0 mW/�C R?JC Thermal Resistance, Junction to Case 83.3 �C/W R?JA Thermal Resistance, Junction to Ambient 200 �C/W � 1997 Fairchild Semiconductor Corporation 33716-25, Rev B BC337-16 / BC337-25

1.7. bc337_bc338.pdf Size:27K _fairchild_semi

00 nA : BC338 VCE=25V, IB=0 2 100 nA hFE1 DC Current Gain VCE=1V, IC=100mA 100 630 hFE2 VCE=1V, IC=300mA 60 VCE (sat) Collector-Emitter Saturation Voltage IC=500mA, IB=50mA 0.7 V VBE (on) Base Emitter On Voltage VCE=1V, IC=300mA 1.2 V fT Current Gain Bandwidth Product VCE=5V, IC=10mA, f=50MHz 100 MHz Cob Output Capacitance VCB=10V, IE=0, f=1MHz 12 pF hFE Classification Classification 16 25 40 hFE1 100 ~ 250 160 ~ 400 250 ~ 630 hFE2 60- 100- 170- �2002 Fairchild Semiconductor Corporat

1.8. bc337_338_1.pdf Size:179K _vishay

50 Collector-Emitter Voltage V V CES BC338 30 BC337 45 Collector-Emitter Voltage V V CEO BC338 25 Emitter-Base Voltage V 5V EBO Collector Current I 800 mA C Peak Collector Current I 1A CM Base Current I 100 mA B Power Dissipation at T = 25�CP mW 625(1) amb tot Thermal Resistance Junction to Ambient Air R 200(1) �C/W ?JA Junction Temperature T 150 �C j Storage Temperature Range T �65 to +150 �C S Note: (1) Valid provided that leads are kept at ambient temperature at a d

1.9. bc337-a_bc338.pdf Size:65K _central

1.10. bc337-16-25-40_bc338-16-25-40.pdf Size:234K _mcc

Breakdown Voltage 5.0 --- Vdc (IE=10�Adc, IC=0) ICBO Collector Cutoff Current �Adc (VCB=45Vdc,IE=0) BC337 --- 0.1 (VCB=25Vdc,IE=0) BC338 --- 0.1 ICEO Collector Cutoff Current �Adc (VCE=40Vdc,IB=0) BC337 --- 0.2 D (VCE=20Vdc,IB=0) BC338 --- 0.2 IEBO Emitter Cutoff Current --- 0.1 �Adc (VEB=4.0Vdc, IC=0) ON CHARACTERISTICS hFE(2) DC Current Gain 60 --- -- (IC=300mAdc, VCE=1.0Vdc) C VCE(sat) Collector-Emitter Saturation Voltage --- 0.7 Vdc B E (IC=500mAdc, IB=50mAdc) G

1.11. bc337-25-40.pdf Size:141K _onsemi

he Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. BC33 7-xx AYWW G G BC337-xx = Device Code (Refer to page 4) A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION *For additional information on our Pb-Free strategy and soldering details, please See detailed ordering and shipping information in the pa

1.12. bc337~bc338.pdf Size:362K _secos

, T 150, -55~150 °C J STG http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 04-Mar-2011 Rev. B Page 1 of 4 BC337 / BC338 NPN Plastic-Encapsulate Transistor Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector to Base Breakdown BC337 50 - - V V I =100µA, I =0 (BR)CBO C E Voltage BC338 30 - - Collector to Emitter Breakdown BC337 4

1.13. bc337.pdf Size:338K _kec

(Note) 100 - 630 VCE(sat) IC=500mA, IB=50mA Collector-Emitter Saturation Voltage - - 0.7 V VBE(ON) VCE=1V, IC=300mA Base-Emitter Voltage - - 1.2 V fT VCE=5V, IC=10mA, f=100MHz Transition Frequency - 100 - MHz Cob VCB=10V, f=1MHz, IE=0 Collector Output Capacitance - 16 - pF Note : hFE Classification none:100 630, 16:100 250, 25:160 400, 40:250 630 2000. 2. 28 Revision No : 2 1/2 A J C L M BC337 2000. 2. 28 Revision No : 2 2/2

1.14. bc337-338.pdf Size:172K _lge

t BC337 VCE= 40V, IB=0 0.2 ICEO uA BC338 VCE= 20V, IB=0 0.2 Emitter cut-off current IEBO VEB= 4 V, IC=0 0.1 uA BC337/BC338 100 630 BC337-16/BC338-16 100 250 hFE(1) VCE=1V, IC= 100mA BC337-25/BC338-25 160 400 BC337-40/BC338-40 250 630 DC current gain hFE(2) VCE=1V, IC= 300mA 60 Collector-emitter saturation voltage VCE(sat) IC=500mA, IB= 50mA 0.7 V Base-emitter saturation voltage VBE(sat) IC= 500mA, IB=50mA 1.2 V Base-emitter voltage VBE VCE=1V, IC= 300mA 1.2 V VCE= 5V

1.15. bc337_bc338.pdf Size:256K _wietron

nless otherwise noted) (Countinued) Characteristics Min Typ Max Unit Symbol OFF CHARACTERISTICS Collector Cut-off Current VCE=40V, lB=0 BC337 lCEO µA 0.2 VCE=20V, lB=0 BC338 Collector Cut-off Current lCBO VCB=45V, lE=0 BC337 0.1 µA VCB=25V, lE=0 BC338 Emitter Cutoff Current lEBO 0.1 µA VEB=4.0V, lC=0 ON CHARACTERISTICS DC Current Gain hFE1 100 630 - VCE=1V, lC=100mA - VCE=1V, lC=300mA hFE2 60 - Collector-Emitter Saturation Voltage VCE(sat) - - 0.7 V lC=500mA, lB=

Anderen transistoren... BC332 , BC332A , BC332B , BC332C , BC333 , BC334 , BC335 , BC336 , SS8050 , BC337-01 , BC337-10 , BC337-16 , BC337-25 , BC337-40 , BC337A-16 , BC337A-25 , BC337AP .


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