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BC557
. Höchstzulässige Werte. Charakteristische Werte. Datenblatt. Typenbezeichnung: BC557
Werkstoff: Si
Polarity: PNP
Gesamt-Verlustleistung (Pc): 0.3
Kollektor-Basis-Sperrspannung (Ucb): 50
Kollektor-Emitter-Sperrspannung (Uce): 45
Emitter-Basis-Sperrspannung (Ueb): 5
Kollektorstrom (Ic): 0.2
Höchste Sperrschichttemperatur (Tj), °C: 150
Transitfrequenz (ft): 75
Kollektor-Kapazität (Cc), pF:
Kurzschluss-Stromverstärkung (hfe): 75
Transistorgehäuse: X10
Ersatz (vergleichstyp) für BC557
BC557
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1.1. bc556_bc557_bc558.pdf  Size:159K _motorola  |
 | wn Voltage V(BR)CEO V
(IC = –2.0 mAdc, IB = 0) BC556 –65 — —
BC557 –45 — —
BC558 –30 — —
Collector–Base Breakdown Voltage V(BR)CBO V
(IC = –100 µAdc) BC556 –80 — —
BC557 –50 — —
BC558 –30 — —
Emitter–Base Breakdown Voltage V(BR)EBO V
(IE = –100 mAdc, IC = 0) BC556 –5.0 — —
BC557 –5.0 — —
BC558 –5.0 — —
Collector–Emitter Leakage Current ICES
(VCES = –40 V) BC556 — –2.0 –100 nA
(VCES = –20 V) BC557 — –2.0 –100
BC558 — –2.0 –100
(VCES = –20 V, TA = 125°C) BC556 — — –4.0 µA
BC557 — |
1.2. bc556_bc557_bc558_2.pdf Size:220K _motorola  |
 | wn Voltage V(BR)CEO V
(IC = –2.0 mAdc, IB = 0) BC556 –65 — —
BC557 –45 — —
BC558 –30 — —
Collector–Base Breakdown Voltage V(BR)CBO V
(IC = –100 µAdc) BC556 –80 — —
BC557 –50 — —
BC558 –30 — —
Emitter–Base Breakdown Voltage V(BR)EBO V
(IE = –100 mAdc, IC = 0) BC556 –5.0 — —
BC557 –5.0 — —
BC558 –5.0 — —
Collector–Emitter Leakage Current ICES
(VCES = –40 V) BC556 — –2.0 –100 nA
(VCES = –20 V) BC557 — –2.0 –100
BC558 — –2.0 –100
(VCES = –20 V, TA = 125°C) BC556 — — –4.0 µA
BC557 — |
1.3. bc556_bc557.pdf Size:246K _philips  |
 | 50 V
VCEO collector-emitter voltage open base
BC556 - -65 V
BC557 - -45 V
VEBO emitter-base voltage open collector - -5 V
IC collector current (DC) - -100 mA
ICM peak collector current - -200 mA
IBM peak base current - -200 mA
Ptot total power dissipation Tamb ? 25 °C - 500 mW
Tstg storage temperature -65 +150 °C
Tj junction temperature - 150 °C
Tamb ambient temperature -65 +150 °C
2004 Oct 11 2
NXP Semiconductors Product data sheet
PNP general purpose transistors BC556; BC557
T |
1.4. bc556_bc557_3.pdf Size:53K _philips  |
 | A
ICM peak collector current --200 mA
IBM peak base current --200 mA
Ptot total power dissipation Tamb ? 25 °C - 500 mW
Tstg storage temperature -65 +150 °C
Tj junction temperature - 150 °C
Tamb operating ambient temperature -65 +150 °C
1999 Apr 15 2
Philips Semiconductors Product specification
PNP general purpose transistors BC556; BC557
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient note 1 250 K/W
Note
1. Transi |
1.5. bc557b.pdf Size:70K _st  |
 |
THERMAL DATA
o
Rthj-amb • Thermal Resistance Junction-Ambient Max 250 C/W
o
R • Thermal Resistance Junction-Case Max 83.3 C/W
thj-Case
ELECTRICAL CHARACTERISTICS (T = 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I Collector Cut-off V = -30 V -1 -15 nA
CBO CB
Current (IE = 0) VCB = -30 V TC = 150 oC -4 µA
I Emitter Cut-off Current V = -5 V -100 nA
EBO EB
(IC = 0)
V ? Collector-Emitter I = -10 mA -45 V
(BR)CEO C
Breakdown Voltage
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1.6. bc556_bc557_bc558_bc559_bc560.pdf Size:43K _fairchild_semi  |
 | ector-Base Saturation Voltage IC= -10mA, IB= -0.5mA -700 mV
IC= -100mA, IB= -5mA -900 mV
VBE (on) Base-Emitter On Voltage VCE= -5V, IC= -2mA -600 -660 -750 mV
VCE= -5V, IC= -10mA -800 mV
fT Current Gain Bandwidth Product VCE= -5V, IC= -10mA, f=10MHz 150 MHz
Cob Output Capacitance VCB= -10V, IE=0, f=1MHz 6 pF
NF Noise Figure : BC556/557/558 VCE= -5V, IC= -200µA 2 10 dB
: BC559/560 f=1KHz, RG=2K? 1 4 dB
: BC559 VCE= -5V, IC= -200µA 1.2 4 dB
: BC560 RG=2K?, f=30~15000MHz 1.2 2 dB
hFE Cla |
1.7. bc556b_bc557a-b-c_bc558b.pdf Size:81K _onsemi  |
 | ion-to-Case RqJC 83.3 °C/W G
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
xx = 6B, 7A, 7B, 7C, or 8B
A = Assembly Location
Y = Year
WW = Work Week
G = Pb-Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed orderi |
1.8. bc556_bc557_bc558.pdf Size:274K _kec  |
 | ACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
ICBO VCB=-30V, IE=0
Collector Cut-off Current - - -15 nA
BC556 110 - 450
hFE VCE=-5V, IC=-2mA
DC Current Gain (Note) BC557 110 - 800
BC558 110 - 800
BC556 - - -0.65
Collector-Emitter
VCE(sat) IC=-100mA, IB=-5mA
BC557 - - -0.65 V
Saturation Voltage
BC558 - - -0.65
BC556 - -0.9 -1.1
Base-Emitter
VBE(sat) IC=-100mA, IC=-5mA
BC557 - -0.9 -1.1 V
Saturation Voltage
BC558 - -0.9 -1.1
VBE(ON) 1 VCE=-5V, IC=-2mA
-0.6 - -0.75 V
Base |
1.9. bc556_bc557_bc558.pdf Size:2241K _wietron  |
 | 57 V
(BR)EBO -5
V
BC558
W E I T R O N
1/5 26-Apr-05
h t t p : / / w w w . w e i t r o n . c o m . t w
BC556, A/B
BC557, A/B/C
BC558, A/B/C
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)
?
Min Max Unit
Characteristics Symbol
OFF CHARACTERISTICS
Collector Cutoff Current
BC556
(VCE=-60V, lB=0)
mA
-0.1
lCEO
BC557
(VCE=-40V, lB=0)
(VCE=-25V, lB=0)
BC558
Collector Cutoff Current
BC556
(VCB=-70V, lE=0)
lCBO
-0.1 mA
BC557
(VCB=-45V, lE=0)
BC558
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Anderen transistoren... BC550CP
, BC551
, BC556
, BC556A
, BC556AP
, BC556B
, BC556BP
, BC556VI
, BC109
, BC557A
, BC557AP
, BC557B
, BC557BP
, BC557C
, BC557VI
, BC558
, BC558A
.
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