BC808-16 >> Datenblatt. Höchstzulässige Werte. Charakteristische Werte

either location) Stresses exceeding Maximum Ratings may damage the device. Maximum *Date Code orientation and/or overbar may Ratings are stress ratings only. Functional operation above the Recommended vary depending upon manufacturing location. Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR-5 = 1.0 x 0.75 x 0.062 in. ORDERING INFORMATION 2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina. See

5.1. bc807_bc808.pdf Size:72K _fairchild_semi

nt VCE= -25V, VBE=0 -100 nA IEBO Emitter Cut-off Current VEB= -4V, IC=0 -100 nA hFE1 DC Current Gain VCE= -1V, IC= -100mA 100 630 hFE2 VCE= -1V, IC= -300mA 60 VCE (sat) Collector-Emitter Saturation Voltage IC= -500mA, IB= -50mA -0.7 V VBE (on) Base-Emitter On Voltage VCE= -1V, IC= -300mA -1.2 V fT Current Gain Bandwidth Product VCE= -5V, IC= -10mA 100 MHz f=50MHz Cob Output Capacitance VCB= -10V, f=1MHz 12 pF �2002 Fairchild Semiconductor Corporation Rev. A2, August 2002 BC807/BC808

5.2. bc807_bc808.pdf Size:73K _samsung

EBO VEB= -4V, IC=0 -100 DC Current Gain hFE1 VCE= -1V, IC= -100mA 100 630 hFE2 VCE= -1V, IC= -300mA 60 Collector-Emitter Saturation Voltage VCE (sat) IC= -500mA, IB= -50mA V -0.7 Base-Emitter On Voltage VBE (on) VCE= -1V, IC= -300mA V -1.2 100 Current Gain Bandwidth Product fT VCE= -5V, IC= -10mA MHz f=50MHz Collector-Base Capacitance CCBO VCB= -10V, f=1MHz pF 12 h CLASSIFICATION FE Classification 16 25 40 hFE1 100-250 160-400 250-630 hFE2 60- 100- 170- MARKING CODE TYPE 80

5.3. bc807_bc808.pdf Size:49K _diodes

5.4. bc808.pdf Size:814K _secos

ntinuous I -800 mA C Collector Power Dissipation P 300 mW C Junction, Storage Temperature T , T 150, -65 ~ 150 °C J STG ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector to Base Breakdown Voltage V -30 - - V I = -100µA, I =0 (BR)CBO C E Collector to Emitter Breakdown Voltage V(BR)CEO -25 - - V IC= -10mA, IB=0 Emitter to Base Breakdown Voltage V -5 - - V I = -100µA, I =0 (BR)EBO E C Collector C

5.5. bc808.pdf Size:424K _htsemi

hFE(2) VCE=-1V, IC=-300mA 60 Collector-emitter saturation voltage VCE(sat) V IC=-500mA, IB=-50mA -0.7 Base-emitter voltage VBE V VCE=-1V, IC=-300mA -1.2 MHz Transition frequency f VCE=-5V, IC=-10mA, f=50MHz 100 T Collector output capacitance Cob pF VCB=-10V, IE=0, f=1MHz 12 CLASSIFICATION OF hFE Rank 16 25 40 Range hFE(1) 100-250 160-400 250-630 Marking 5E 5F 5G 1 JinYu www.htsemi.com semiconductor Date:2011/05 BC808 Typical Characteristics 2 JinYu www.htse

5.6. bc808_sot-23.pdf Size:206K _lge

VCE=-1V, IC=-100mA 100 630 DC current gain hFE(2) VCE=-1V, IC=-300mA 60 Collector-emitter saturation voltage VCE(sat) V IC=-500mA, IB=-50mA -0.7 Base-emitter voltage VBE V VCE=-1V, IC=-300mA -1.2 MHz Transition frequency f VCE=-5V, IC=-10mA, f=50MHz 100 T Collector output capacitance Cob pF VCB=-10V, IE=0, f=1MHz 12 CLASSIFICATION OF hFE Rank 16 25 40 Range hFE(1) 100-250 160-400 250-630 Marking 5E 5F 5G BC808 SOT-23 Transistor (PNP) Typical Characteristics

5.7. bc808.pdf Size:930K _wietron

mitte Cut-off Current (VEB=-4V, IC=0) IEBO ?A - -0.1 WEITRON 1/4 09-Jul-07 http://www.weitron.com.tw BC808 Electrical Characteristics (TA=25?C unless otherwise noted) (Countinued) Characteristics Symbol MAX UNIT MIN TYP On Characteristics DC Current Gain hFE(1) - - 100 630 (V =-1V, I = -100mA) CE C hFE(2) 60 - - - (V =-1V, I = -300mA) CE C Collector-Emitter Saturation Voltage VCE(sat) - - 0.7 V (IC= -500mA,I = -50mA) B Base-Emitter Voltage VBE - - V -1.2 (V =-1V, I

Anderen transistoren... BC807-16W , BC807-25 , BC807-25LT1 , BC807-25W , BC807-40 , BC807-40LT1 , BC807-40W , BC808 , TIP122 , BC808-16W , BC808-25 , BC808-25W , BC808-40 , BC808-40W , BC817 , BC817-16 , BC817-16LT1 .


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