BC846BW . Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: BC846BW

Werkstoff: Si

Polarity: NPN

Gesamt-Verlustleistung (Pc): 0.25

Kollektor-Basis-Sperrspannung (Ucb): 80

Kollektor-Emitter-Sperrspannung (Uce): 60

Emitter-Basis-Sperrspannung (Ueb): 6

Kollektorstrom (Ic): 0.1

Höchste Sperrschichttemperatur (Tj), °C: 150

Transitfrequenz (ft): 300

Kollektor-Kapazität (Cc), pF: 6

Kurzschluss-Stromverstärkung (hfe): 290

Transistorgehäuse: SOT323

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4.1. bc846bpn.pdf Size:129K _philips

2 (PNP) hFE DC current gain VCE = -5V; 200 290 450 IC = -2mA BC846BPN NXP Semiconductors 65 V, 100 mA NPN/PNP general-purpose transistor 2. Pinning information Table 3. Pinning Pin Description Simplified outline Graphic symbol 1 emitter TR1 6 5 4 6 5 4 2 base TR1 3 collector TR2 TR2 TR1 4 emitter TR2 1 2 3 5 base TR2 1 2 3 6 collector TR1 sym019 3. Ordering information Table 4. Ordering information Type number Package Name Description Version BC846BPN SC-88 plastic sur

4.2. bc846bdw1t1g_bc847bdw1t1g_bc848cdw1t1g.pdf Size:127K _onsemi

commended Operating Conditions may affect device reliability. (Note: Microdot may be in either location) THERMAL CHARACTERISTICS ORDERING INFORMATION Characteristic Symbol Max Unit See detailed ordering and shipping information in the package Total Device Dissipation PD 380 mW dimensions section on page 6 of this data sheet. Per Device 250 FR-5 Board (Note 1) TA = 25°C Derate Above 25°C 3.0 mW/°C Thermal Resistance, RqJA 328 °C/W Junction to Ambient Junction and Storage TJ, Tstg -5

4.3. bc846bpdw1t1g_bc847bpdw1t1g_bc848cpdw1t1g.pdf Size:166K _onsemi

6 VCBO -80 V Device Mark Package Shipping† BC847 -50 BC846BPDW1T1G BB SOT-363 3000 / BC848 -30 (Pb-Free) Tape & Reel Emitter-Base Voltage VEBO -5.0 V BC847BPDW1T1G SOT-363 3000 / BF Collector Current - Continuous IC -100 mAdc (Pb-Free) Tape & Reel Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommen- BC847BPDW1T2G BF SOT-363 3000 / ded Operating Conditions is not implied. Extended exposure to st

4.4. bc846bm3-d.pdf Size:102K _onsemi

bient (Note 2) †For information on tape and reel specifications, Junction and Storage TJ, Tstg -55 to °C including part orientation and tape sizes, please Temperature Range +150 refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operatin

4.5. bc846bdw_bc847_bc848.pdf Size:101K _wietron

Breakdown Voltage (I =10mAdc) V(BR)CEO Vdc C - - 65 BC846 - - 45 BC847 - - 30 BC848 Vdc Collector-Emitter Breakdown Voltage (IC=10 uAdc, VEB=0) V(BR)CES - - 80 BC846 - - 50 BC847 - - 30 BC848 V(BR)CBO Emitter-Base Breakdown Voltage (IC=10 uAdc) Vdc - - 80 BC846 - - 50 BC847 - - 30 BC848 Emitter-Base Breakdown Voltage (IE=1.0 uAdc) V(BR)EBO Vdc - - 6.0 BC846 - - 6.0 BC847 - - 5.0 BC848 nAdc 15 ICBO - - Collector Cutoff Current (VCB=30Vd

4.6. bc846bpdw_bc847_bc848.pdf Size:495K _wietron

W = BB , BC847BPDW = 3F , BC847CPDW = 3G , BC848BPDW = 13K , BC848CPDW = 13L WEITRON 1/9 09-Oct-08 http://www.weitron.com.tw BC846BPDW Series ELECTRICAL CHARACTERISTICS (NPN) (TA = 25° unless otherwise noted) C Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage V(BR)CEO V (IC = 10 mA) BC846 Series 65 — — BC847 Series 45 — — BC848 Series 30 — — Collector–Emitter Breakdown Voltage V(BR)CES V (IC = 10 µA, VEB = 0) BC846 Se

Anderen transistoren... BC846AWT1 , BC846B , BC846B , BC846B , BC846B , BC846B , BC846BLT1 , BC846BR , C102 , BC846BWT1 , BC847 , BC847A , BC847A , BC847A , BC847A , BC847ALT1 , BC847AR .