BC847 >> Datenblatt. Höchstzulässige Werte. Charakteristische Werte

G BC846ALT1 = 1A; BC846BLT1 = 1B; BC847ALT1 = 1E; BC847BLT1 = 1F; BC847CLT1 = 1G; BC848ALT1 = 1J; BC848BLT1 = 1K; BC848CLT1 = 1L ELECTRICAL CHARACTERISTICS (TA = 25�C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector�Emitter Breakdown Voltage BC846A,B V(BR)CEO 65 � � V (IC = 10 mA) BC847A,B,C, BC850A,B,C 45 � � BC848A,B,C, BC849A,B,C 30 � � Collector�Emitter Breakdown Voltage BC846A,B V(BR)CES 80 � � V (IC = 10 �A, VEB = 0) BC847A,B,C, BC850A,

1.2. bc846awt_bc847awt_bc848awt_bc849awt_bc850awt.pdf Size:207K _motorola

; BC847BWT1 = 1F; BC847CWT1 = 1G; BC848AWT1 = 1J; BC848BWT1 = 1K; BC848CWT1 = 1L ELECTRICAL CHARACTERISTICS (TA = 25�C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector�Emitter Breakdown Voltage BC846 Series V(BR)CEO 65 � � V (IC = 10 mA) BC847 Series 45 � � BC848 Series 30 � � Collector�Emitter Breakdown Voltage BC846 Series V(BR)CES 80 � � V (IC = 10 �A, VEB = 0) BC847 Series 50 � � BC848 Series 30 � � Collector�Base Breakdown Voltage BC846

1.3. bc846t_bc847t_series_3.pdf Size:77K _philips

846BT - 80 V BC847AT; BC847BT; BC847CT - 50 V VCEO collector-emitter voltage open base BC846AT; BC846BT - 65 V BC847AT; BC847BT; BC847CT - 45 V VEBO emitter-base voltage open collector - 5V IC collector current (DC) - 100 mA ICM peak collector current - 200 mA IBM peak base current - 100 mA Ptot total power dissipation Tamb ? 25 �C; note 1 - 150 mW Tstg storage temperature -65 +150 �C Tj junction temperature - 150 �C Tamb operating ambient temperature -65 +150 �C Note 1. Transistor

1.4. bc847bv.pdf Size:123K _philips

symbol. BC847BV 1F 2001 Sep 10 2 NXP Semiconductors Product data sheet NPN general purpose double transistor BC847BV LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per transistor VCBO collector-base voltage open emitter - 50 V VCEO collector-emitter voltage open base - 45 V VEBO emitter-base voltage open collector - 5 V IC collector current (DC) - 100 mA ICM peak collector current - 200 mA IBM peak ba

1.5. bc846w_bc847w_3.pdf Size:55K _philips

MAX. UNIT VCBO collector-base voltage open emitter BC846W - 80 V BC847W - 50 V VCEO collector-emitter voltage open base BC846W - 65 V BC847W - 45 V VEBO emitter-base voltage open collector - 5V IC collector current (DC) - 100 mA ICM peak collector current - 200 mA IBM peak base current - 200 mA Ptot total power dissipation Tamb ? 25 �C; note 1 - 200 mW Tstg storage temperature -65 +150 �C Tj junction temperature - 150 �C Tamb operating ambient temperature -65 +150 �C Note 1. Tran

1.6. bc846_bc847_3.pdf Size:53K _philips

voltage open emitter BC846 - 80 V BC847 - 50 V VCEO collector-emitter voltage open base BC846 - 65 V BC847 - 45 V VEBO emitter-base voltage open collector - 6V IC collector current (DC) - 100 mA ICM peak collector current - 200 mA IBM peak base current - 200 mA Ptot total power dissipation Tamb ? 25 �C; note 1 - 250 mW Tstg storage temperature -65 +150 �C Tj junction temperature - 150 �C Tamb operating ambient temperature -65 +150 �C Note 1. Transistor mounted on an FR4 printed-c

1.7. bc847_bc547_ser.pdf Size:97K _philips

ns General-purpose switching and amplification 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - 45 V IC collector current - - 100 mA hFE DC current gain VCE =5V; IC = 2 mA 110 - 800 hFE group A 110 180 220 hFE group B 200 290 450 hFE group C 420 520 800 2. Pinning information Table 3. Pinning Pin Description Simplified outline Graphic symbol SOT23, SOT323, SOT416 1 base 3 3 2 emitte

1.8. bc847bs_2.pdf Size:51K _philips

RAMETER CONDITIONS MIN. MAX. UNIT Per transistor VCBO collector-base voltage open emitter - 50 V VCEO collector-emitter voltage open base - 45 V VEBO emitter-base voltage open collector - 5V IC collector current (DC) - 100 mA ICM peak collector current - 200 mA IBM peak base current - 200 mA Ptot total power dissipation Tamb ? 25 �C - 200 mW Tstg storage temperature -65 +150 �C Tj junction temperature - 150 �C Tamb operating ambient temperature -65 +150 �C Per device Ptot total powe

1.9. bc847bpn_2.pdf Size:53K _philips

R CONDITIONS MIN. MAX. UNIT Per transistor; for the PNP transistor with negative polarity VCBO collector-base voltage open emitter - 50 V VCEO collector-emitter voltage open base - 45 V VEBO emitter-base voltage open collector - 5V IC collector current (DC) - 100 mA ICM peak collector current - 200 mA IBM peak base current - 200 mA Ptot total power dissipation Tamb ? 25 �C - 200 mW Tstg storage temperature -65 +150 �C Tj junction temperature - 150 �C Tamb operating ambient temperature

1.10. bc847bvn.pdf Size:136K _philips

47BVN 13 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per transistor; for the PNP transistor with negative polarity VCBO collector-base voltage open emitter - 50 V VCEO collector-emitter voltage open base - 45 V VEBO emitter-base voltage open collector - 5 V IC collector current (DC) - 100 mA ICM peak collector current - 200 mA IBM peak base current - 200 mA Ptot total power dissipation Tamb ? 25 �C; note

1.11. bc846f_bc847f_bc848f_series_2.pdf Size:46K _philips

uctors Preliminary specification NPN general purpose transistors BC846F; BC847F; BC848F series LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter BC846AF; BC846BF - 80 V BC847AF; BC847BF; BC847CF - 50 V BC848AF; BC848BF; BC848CF - 30 V VCEO collector-emitter voltage open base BC846AF; BC846BF - 65 V BC847AF; BC847BF; BC847CF - 45 V BC848AF; BC848BF; BC848CF - 30 V VEBO e

1.12. bc847bpn.pdf Size:101K _philips

TR1 4 emitter TR2 1 2 3 5 base TR2 1 2 3 6 collector TR1 sym019 BC847BPN NXP Semiconductors 45 V, 100 mA NPN/PNP general-purpose transistor 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BC847BPN SC-88 plastic surface-mounted package; 6 leads SOT363 4. Marking Table 4. Marking codes Type number Marking code[1] BC847BPN 13* [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China

1.13. bc847.pdf Size:39K _st

10 x 8 x 0.6 mm o ELECTRICAL CHARACTERISTICS (Tcase =25 C unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit I Collector Cut-off V = 30 V 15 nA CBO CE o Current (IE = 0) VCE = 30 V Tamb = 150 C 5 �A V ? Collector-Emitter I = 10 �A50 V (BR)CES C Breakdown Voltage (V = 0) BE V(BR)CBO? Collector-Base IC = 10 �A50 V Breakdown Voltage (IE = 0) V(BR)CEO? Collector-Emitter IC = 2 mA 45 V Breakdown Voltage (IB = 0) V Emitter-Base I = 10 �A6 V (BR)EBO C

1.14. bc847bw_bc847cw.pdf Size:42K _st

of 1 cm . ELECTRICAL CHARACTERISTICS (T = 25 oC unless otherwise specified) case Symbol Parameter Test Conditions Min. Typ. Max. Unit ICBO Collector Cut-off VCB = 30 V 15 nA Current (I = 0) V = 30 V T = 150 oC 5 �A E CB C IEBO Emitter Cut-off Current VEB = 5 V 100 nA (IC = 0) V(BR)CBO Collector-Base IC = 10 �A 50 V Breakdown Voltage (IE = 0) V(BR)CEO? Collector-Emitter IC = 2 mA 45 V Breakdown Voltage (IB = 0) V Emitter-Base IE = 10 �A 6V (BR)EBO Breakdown Voltage (IC = 0) VCE

1.15. bc847b_bc847c.pdf Size:57K _st

LECTRICAL CHARACTERISTICS (T = 25 oC unless otherwise specified) case Symbol Parameter Test Conditions Min. Typ. Max. Unit ICBO Collector Cut-off VCB = 30 V 15 nA Current (I = 0) V = 30 V T = 150 oC 5 �A E CB C IEBO Emitter Cut-off Current VEB = 5 V 100 nA (IC = 0) V(BR)CBO Collector-Base IC = 10 �A 50 V Breakdown Voltage (IE = 0) V(BR)CEO? Collector-Emitter IC = 2 mA 45 V Breakdown Voltage (IB = 0) V Emitter-Base IE = 10 �A 6V (BR)EBO Breakdown Voltage (IC = 0) VCE(sat)? Colle

1.16. bc847s.pdf Size:51K _fairchild_semi

ory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25�C unless otherwise noted Symbol Characteristic Max Units BC847S PD Total Device Dissipation 300 mW 2.4 Derate above 25�C mW/�C Thermal Resistance, Junction to Ambient 415 R?JA �C/W �2001 Fairchild Semiconductor Corporation Rev.A1 BC847S NPN Multi-Chip General Purpose Amplifier (continued) Electrical Characteristics TA = 25�C unless otherwise noted Symbol Parameter

1.17. bc847bs.pdf Size:193K _fairchild_semi

e steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics * Ta = 25�C unless otherwise noted Symbol Characteristic Max Units 210 PD Total Device Dissipation mW mW/? 1.6 Derate above 25? R ? JA Thermal Resistance, Junction to Ambient 625 ?/W *Device mounted on FR-4 PCB 1.6� X 1.6� X 0.06�. �2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com BC847BS Rev. A BC847BS Electrical Characteris

1.18. bc846_bc847_bc848_bc849_bc850-series.pdf Size:136K _fairchild_semi

-off Current VCB=30V, IE=0 15 nA hFE DC Current Gain VCE=5V, IC=2mA 110 800 VCE (sat) Collector-Emitter Saturation Voltage IC=10mA, IB=0.5mA 90 250 mV IC=100mA, IB=5mA 200 600 mV VBE (sat) Collector-Base Saturation Voltage IC=10mA, IB=0.5mA 700 mV IC=100mA, IB=5mA 900 mV VBE (on) Base-Emitter On Voltage VCE=5V, IC=2mA 580 660 700 mV VCE=5V, IC=10mA 720 mV fT Current Gain Bandwidth Product VCE=5V, IC=10mA, f=100MHz 300 MHz Cob Output Capacitance VCB=10V, IE=0, f=1MHz 3.5 6 pF Cib Input

1.19. bc846_bc847_bc848_bc849_bc850.pdf Size:58K _samsung

t) IC=10mA, IB=0.5mA Collector Base Saturation Voltage 700 mV IC=100mA, IB=5mA 900 mV VBE (on) VCE=5V, IC=2mA Base Emitter On Voltage 580 660 700 mV VCE=5V, IC=10mA 720 mV fT VCE=5V, IC=10mA MHz Current Gain Bandwidth Product 300 f=100MHz Collector Base Capacitance CCBO VCB=10V, f=1MHz 6 pF 3.5 Emitter Base Capacitance CEBO VEB=0.5V, f=1MHz pF 9 NF VCE=5V, IC=200 Noise Figure :BC846/847/848 10 dB 2 f=1KHz, RG=2 4 dB :BC849/850 1.2 VCE=5V, IC=200 :BC849 NF 4 dB 1.4 RG=

1.20. bc847s.pdf Size:119K _siemens

min. typ. max. DC Characteristics per Transistor Collector-emitter breakdown voltage V(BR)CEO V IC = 10 mA, IB = 0 45 - - Collector-base breakdown voltage V(BR)CBO IC = 10 �A, IB = 0 50 - - Collector-emitter breakdown voltage V(BR)CES IC = 10 �A, VBE = 0 50 - - Base-emitter breakdown voltage V(BR)EBO IE = 10 �A, IC = 0 6 - - Collector cutoff current ICBO VCB = 30 V, IE = 0 , TA = 25 �C - - 15 nA VCB = 30 V, IE = 0 , TA = 150 �C - - 5 �A DC current gain 1) hFE - IC = 10 �A, VCE = 5

1.21. bc847pn.pdf Size:166K _siemens

aracteristics at TA=25�C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics per Transistor Collector-emitter breakdown voltage V(BR)CEO V IC = 10 mA, IB = 0 45 - - Collector-base breakdown voltage V(BR)CBO IC = 10 �A, IB = 0 50 - - Collector-emitter breakdown voltage V(BR)CES IC = 10 �A, VBE = 0 50 - - Base-emitter breakdown voltage V(BR)EBO IE = 10 �A, IC = 0 5 - - Collector cutoff current ICBO nA VCB = 30 V, IE = 0 , TA = 25 �C - - 15 VCB =

1.22. bc846_bc847_bc848_bc849_bc850.pdf Size:273K _siemens

r-base voltage VEB0 665 Collector current IC 100 mA Peak collector current ICM 200 Peak base current IBM 200 Peak emitter current IEM 200 330 Total power dissipation, TS = 71 ?C Ptot mW Junction temperature Tj 150 ?C Storage temperature range Tstg � 65 � + 150 Thermal Resistance Junction - ambient1) Rth JA ? 310 K/W Junction - soldering point Rth JS ? 240 1) Package mounted on epoxy pcb 40 mm ? 40 mm ? 1.5 mm/6 cm2 Cu. Semiconductor Group 2 BC 846 ... BC 850 Electrical Character

1.23. bc846w_bc847w_bc848w_bc849w_bc850w.pdf Size:272K _siemens

or-base voltage VCBO 80 50 30 V Collector-emitter voltage VCES 80 50 30 V Emitter-base voltage VEBO 66 5 V Collector current IC 100 mA Collector peak current ICM 200 mA Total power dissipation, TS = 115 ?C Ptot 250 mW Junction temperature Tj 150 ?C Storage temperature range Tstg �65 to 150 ?C Thermal Resistance Junction - ambient1) Rth JA ? 240 K/W Junction - soldering point Rth JS ? 105 K/W 1) Package mounted on epoxy pcb 40 mm ? 40 mm ? 1.5 mm/1 cm2 Cu. Semiconductor Group 2 BC

1.24. bc847b(rohm).pdf Size:26K _rohm

1.25. bc847b.pdf Size:97K _rohm

own voltage BVCBO 50 - - V IC=50�A Collector-emitter breakdown voltage BVCEO 45 - - V IC=1mA Emitter-base breakdown voltage BVEBO 6 - - V IE=50�A - - 15 nA VCB=30V Collector cutoff current ICBO - - 5 �A VCB=30V, Ta=150�C - - 0.25 IC/IB=10mA/0.5mA Collector-emitter saturation voltage VCE(sat) V - - 0.6 IC/IB=100mA/5mA Base-emitter saturation voltage VBE(on) 0.58 - 0.77 V VCE/IC=5V/10mA DC current transfer ratio hFE 200 - 450 - Transition frequency fT - 200 - MHz VCE=5V, IE=-20mA, f=100

1.26. bc847cdlp.pdf Size:113K _diodes

D N Z** - - 0.05 Internal Schematic (TOP VIEW) All Dimensions in mm A * Dimensions D, K, L, N Repeat 4X Bottom View ** Dimensions E, M, Z Repeat 2X Maximum Ratings @TA = 25�C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 45 V Emitter-Base Voltage VEBO 6.0 V Collector Current IC 100 mA Power Dissipation (Note 3) Pd 350 mW Thermal Resistance, Junction to Ambient (Note 3) R?JA 357 �C/W Operati

1.27. bc847bvc.pdf Size:105K _diodes

Emitter-Base Voltage VEBO 6.0 V Collector Current IC 100 mA Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 2) PD 150 mW Thermal Resistance, Junction to Ambient (Note 2) 833 �C/W R?JA Operating and Storage Temperature Range TJ, TSTG -55 to +150 �C Electrical Characteristics @TA = 25�C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage (Note 5) V(BR)CBO 50 � � V IC = 10?A, IB = 0

1.28. bc847bs.pdf Size:106K _diodes

Weight: 0.006 grams Maximum Ratings @TA = 25�C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 45 V Emitter-Base Voltage VEBO 5.0 V Collector Current IC 100 mA Peak Collector Current ICM 200 mA Peak Base Current IBM 200 mA Power Dissipation (Note 1) Pd 200 mW Thermal Resistance, Junction to Ambient (Note 1) 500 �C/W R?JA Operating and Storage Temperature Range Tj, TSTG -65 to +150 �C Electrical

1.29. bc847pn.pdf Size:89K _diodes

ector-Emitter Voltage VCEO 45 V Emitter-Base Voltage VEBO 6.0 V Collector Current IC 100 mA Peak Collector Current ICM 200 mA Peak Emitter Current IEM 200 mA Maximum Ratings, PNP Section @TA = 25�C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -45 V Emitter-Base Voltage VEBO -5.0 V Collector Current IC -100 mA Peak Collector Current ICM -200 mA Peak Emitter Current IEM -200 mA Thermal Charact

1.30. bc847bld.pdf Size:191K _diodes

Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 45 V Emitter-Base Voltage VEBO 6 V Output Current - Continuous (Note 3) IC 200 mA Peak Collector Current ICM 200 mA Peak Emitter Current IEM 200 mA Power Dissipation (Note 3) Pd 300 mW Power Deration Pder 2.4 mW/�C Thermal Characteristics Characteristic Symbol Value Unit Thermal Resistance, Junction to Ambient Air (Note 3) 417 �C/W R?JA Operating and Storage Junction Temperature Range Tj, TSTG -55 to +150 �C

1.31. bc846_bc847_bc848_bc849_bc850.pdf Size:34K _diodes

T V V I � ? i i I i V V V I � V I ? i i i iI I i i BC846 BC847 BC848 BC849 BC850 ELECTRICAL CHARACTERISTICS (Continued) T 8 8 8 8 8 8 IT DITI D i VI i ? i i i T ? ? i ? T ? ? i ? T ? 8 ? i ? T 8 8 8 ? ? VI T T T T V V I VI i T i T i T i T VI T � � T 8 8 8 � � T � � T � �

1.32. bc847at-bt-ct.pdf Size:159K _diodes

ee Page 2 BC847CT 1M � Marking Information: See Page 2 � Weight: 0.002 grams (approximate) Maximum Ratings @TA = 25�C unless otherwise specified Characteristic Symbol Value Unit VCBO 50 V Collector-Base Voltage VCEO 45 V Collector-Emitter Voltage VEBO 6.0 V Emitter-Base Voltage Collector Current IC 100 mA Power Dissipation (Note 1) Pd 150 mW Thermal Resistance, Junction to Ambient (Note 1) 833 �C/W R?JA Operating and Storage Temperature Range Tj, TSTG -55 to +150

1.33. bc846_bc847_bc848-a-b-c.pdf Size:446K _diodes

See Page 4 All Dimensions in mm � Approximate Weight: 0.008 grams Marking Code (Note 2) Type Marking Type Marking BC846A 1A, K1Q BC847C 1G, K1M BC846B 1B, K1R BC848A 1J, K1J, K1E, K1Q BC847A 1E, K1E, K1Q BC848B 1K, K1K, K1F, K1R BC847B 1F, K1F, K1R BC848C 1L, K1L, K1M Maximum Ratings @TA = 25�C unless otherwise specified Characteristic Symbol Value Unit 80 Collector-Base Voltage BC846 VCBO 50 V BC847 30 BC848 65 Collector-Emitter Voltage BC846 VCEO 45 V BC84

1.34. bc847bvn.pdf Size:220K _diodes

003 grams (approximate) E1 B1 C2 @ TA = 25�C unless otherwise specified Maximum Ratings NPN, BC847B Type (Q ) 1 Characteristic Symbol Value Unit Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 45 V Emitter-Base Voltage VEBO 6.0 V Collector Current IC 100 mA Peak Collector Current ICM 200 mA Peak Emitter Current IEM 200 mA @ TA = 25�C unless otherwise specified Maximum Ratings PNP, BC857B Type (Q ) 2 Characteristic Symbol Value Unit Collector-Base Voltage VCBO -50

1.35. bc846_bc847_bc848.pdf Size:116K _diodes

e Page 3 � Weight: 0.006 grams (approximate) Marking Code (Note 2) Type Marking Type Marking BC846AW K1Q BC847CW K1M BC846BW K1R BC848AW K1J, K1E, K1Q BC847AW K1E, K1Q BC848BW K1K, K1F, K1R BC847BW K1F, K1R BC848CW K1L, K1M Maximum Ratings @TA = 25�C unless otherwise specified Characteristic Symbol Value Unit 80 Collector-Base Voltage BC846 BC847 VCBO 50 V 30 BC848 65 Collector-Emitter Voltage BC846 VCEO 45 V BC847 30 BC848 6.0 Emitter-Base Voltage BC846,

1.36. bc847blp.pdf Size:129K _diodes

r packaging details, go to our website at http://www.diodes.com. Marking Information BC847BLP-7 BC847BLP-7B 1F = Product Type Marking Code 1F 1F Top View Top View Dot Denotes Bar Denotes Base Collector Side and Emitter Side 1 of 5 February 2011 BC847BLP � Diodes Incorporated www.diodes.com Document number: DS30525 Rev. 11 - 2 BC847BLP Maximum Ratings @TA = 25�C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage VCBO 50 V Collector-E

1.37. bc847blp4.pdf Size:143K _diodes

http://www.diodes.com. 3. For packaging details, go to our website at http://www.diodes.com. Marking Information BC847BLP4-7 BC847BLP4-7B F1 = Product Type Marking Code F1 F1 Top View Top View Dot Denotes Bar Denotes Base Collector Side and Emitter Side 1 of 5 February 2011 BC847BLP4 � Diodes Incorporated www.diodes.com Document number: DS31297 Rev. 6 - 2 BC847BLP4 Maximum Ratings @TA = 25�C unless otherwise specified Characteristic Symbol Value Unit Collector-

1.38. bc846series_bc847series_bc848series_bc849series_bc850series.pdf Size:182K _infineon

=B 2=E 3=C - - - TSFP-3 BC848BL3 1K 1=B 2=E 3=C - - - TSLP-3-1 BC848BW 1Ks 1=B 2=E 3=C - - - SOT323 BC848C 1Ls 1=B 2=E 3=C - - - SOT23 BC848CW 1Ls 1=B 2=E 3=C - - - SOT323 BC849B 2Bs 1=B 2=E 3=C - - - SOT23 BC849BF 2Bs 1=B 2=E 3=C - - - TSFP-3 BC849C 2Cs 1=B 2=E 3=C - - - SOT23 BC849CW 2Cs 1=B 2=E 3=C - - - SOT323 BC850B 2Fs 1=B 2=E 3=C - - - SOT23 BF850BF 2Fs 1=B 2=E 3=C - - - TSFP-3 BC850BW 2Fs 1=B 2=E 3=C - - - SOT323 BC850C 2Gs 1=B 2=E 3=C - - - SOT23 BC850CW 2Gs 1=

1.39. bc846pn_bc846upn_bc847pn.pdf Size:106K _infineon

nt ICM mW Total power dissipation- Ptot TS ? 115�C, BC846PN, BC847PN 250 TS ? 118�C, BC846UPN 250 150 �C Junction temperature Tj Storage temperature Tstg -65 ... 150 Thermal Resistance Parameter Symbol Value Unit K/W Junction - soldering point1) RthJS BC846PN, BC847PN ? 140 BC846UPN ? 130 1 For calculation of RthJA please refer to Application Note Thermal Resistance 2007-04-20 2 BC846PN/UPN_BC847PN Electrical Characteristics at TA = 25�C, unless otherwise specified Paramet

1.40. bc847bv_sot-563.pdf Size:266K _mcc

arameter Min Typ Max Units V(BR)CEO Collector-Emitter Breakdown Voltage 45 --- --- Vdc (IC=10mAdc, IB=0) V(BR)CBO Collector-Base Breakdown Voltage 50 --- --- Vdc (IC=10uAdc, IE=0) V(BR)EBO Collector-Emitter Breakdown Voltage DIMENSIONS 6 --- --- Vdc (IE=1uAdc, IC=0) INCHES MM ICBO Collector Cutoff Current --- --- 15 nAdc DIM MIN MAX MIN MAX NOTE (VCB=30Vdc, IE=0Vdc) A .006 .011 0.15 0.30 IEBO Emitter Cutoff Current B .043 .049 1.10 1.25 --- --- 100 nAdc (VEB=5Vdc, IC

1.41. bc846aw-bw_bc847aw-bw-cw_bc848aw-bw-cw_sot-323.pdf Size:666K _mcc

BW --- 80 BC847AW/BW/CW --- 50 K BC848AW/BW/CW --- 30 DIMENSIONS V(BR)CEO Collector-Emitter Breakdown Voltage Vdc (IC=10mAdc, IB=0) INCHES MM BC846AW/BW --- 65 DIM MIN MAX MIN MAX NOTE BC847AW/BW/CW --- 45 A .071 .087 1.80 2.20 BC848AW/BW/CW --- 30 B .045 .053 1.15 1.35 C .079 .087 2.00 2.20 V(BR)EBO Emitter-Base Breakdown Voltage Vdc D .026 Nominal 0.65Nominal (IE=1�Adc, IC=0) E .047 .055 1.20 1.40 BC846AW/BW, BC847AW/BW/CW --- 6 F .012 .016 .30 .40 BC848AW/BW/CW --- 5

1.42. bc846a_bc847_bc848_bc849c_sot-23.pdf Size:220K _mcc

1.43. bc847bs_sot-363.pdf Size:280K _mcc

d Power Dissipation @ TA=25 INCHES MM DIM MIN MAX MIN MAX NOTE TJ, TSTG Operating & Storage Temperature -55~+150 A .006 .014 0.15 0.35 B .045 .053 1.15 1.35 C .085 .096 2.15 2.45 D .026 0.65Nominal G .047 .055 1.20 1.40 H .071 .087 1.80 2.20 J --- .004 --- 0.10 K .035 .043 0.90 1.10 L .010 .018 0.26 0.46 M .003 .006 0.08 0.15 www.mccsemi.com Revision: A 1 of 5 2011/01/01 MCC BC847BS TM Micro Commercial Components Electrical Characteristics @ 25 Unless Otherwise Specified

1.44. bc847at-bt-ct_sot-523.pdf Size:215K _mcc

IMENSIONS IC Collector Current 100 mAdc INCHES MM DIM MIN MAX MIN MAX NOTE Pd Power Dissipation (Note 1) 150 mW A .059 .067 1.50 1.70 B .030 .033 0.75 0.85 Thermal Resistance, Junction to R JA 833 /W C .057 .069 1.45 1.75 Ambient(Note 1) D .020 Nominal 0.50Nominal E .035 .043 0.90 1.10 TJ, TSTG Operating & Storage Temperature -55~+150 G .000 .004 .000 .100 H .028 .031 .70 0.80 Note: 1. Device mounted on FR-4 PCB with recommended pad J .004 .008 .100 .200 layout K .010

1.45. bc846_bc847_bc848_2.pdf Size:81K _mcc

M MIN MAX MIN MAX NOTE BC846 --- 65 A .110 .120 2.80 3.04 BC847 --- 45 B .083 .098 2.10 2.64 C .047 .055 1.20 1.40 BC848 --- 30 D .035 .041 .89 1.03 V(BR)EBO Collector-Emitter Breakdown Voltage Vdc E .070 .081 1.78 2.05 (IE=10�Adc, IC=0) --- 6 F .018 .024 .45 .60 ICBO Collector Cut-off Current --- 0.1 �Adc G .0005 .0039 .013 .100 BC846 (VCB=80V, IE=0) H .035 .044 .89 1.12 J .003 .007 .085 .180 BC847 (VCB=50V, IE=0) K .015 .020 .37 .51 BC848 (VCB=30V, IE=0) ICEO Collector Cut

1.46. bc847cdxv6t1g_bc847cdxv6t5g_bc848cdxv6t1g.pdf Size:96K _onsemi

Max Unit 1x = Device Code x = G or M Total Device Dissipation, (Note 1) PD M = Date Code TA = 25�C 357 mW G = Pb-Free Package Derate above 25�C 2.9 mW/�C (Note: Microdot may be in either location) Thermal Resistance, RqJA 350 �C/W Junction-to-Ambient (Note 1) Characteristic ORDERING INFORMATION (Both Junctions Heated) Symbol Max Unit See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Total Device Dissipation, (Note 1) P

1.47. bc846bdw1t1g_bc847bdw1t1g_bc848cdw1t1g.pdf Size:127K _onsemi

commended Operating Conditions may affect device reliability. (Note: Microdot may be in either location) THERMAL CHARACTERISTICS ORDERING INFORMATION Characteristic Symbol Max Unit See detailed ordering and shipping information in the package Total Device Dissipation PD 380 mW dimensions section on page 6 of this data sheet. Per Device 250 FR-5 Board (Note 1) TA = 25�C Derate Above 25�C 3.0 mW/�C Thermal Resistance, RqJA 328 �C/W Junction to Ambient Junction and Storage TJ, Tstg -5

1.48. bc847att1-btt1-ctt1.pdf Size:71K _onsemi

istic Symbol Max Unit Total Device Dissipation, PD FR-4 Board (Note 1) 200 mW xx = Device Code TA = 25�C M = Date Code Derated above 25�C 1.6 mW/�C Thermal Resistance, RqJA 600 �C/W Junction-to-Ambient (Note 1) ORDERING INFORMATION Total Device Dissipation, PD See detailed ordering and shipping information in the package FR-4 Board (Note 2) 300 mW dimensions section on page 5 of this data sheet. TA = 25�C Derated above 25�C 2.4 mW/�C Thermal Resistance, RqJA 400 �C/W Junction-to-

1.49. bc846_bc847_bc848_bc849_bc850.pdf Size:131K _onsemi

ode THERMAL CHARACTERISTICS M = Date Code* G = Pb-Free Package Characteristic Symbol Max Unit (Note: Microdot may be in either location) Total Device Dissipation FR- 5 Board, PD 225 mW *Date Code orientation and/or overbar may (Note 1) vary depending upon manufacturing location. TA = 25�C Derate above 25�C 1.8 mW/�C Thermal Resistance, RqJA 556 �C/W ORDERING INFORMATION Junction-to-Ambient (Note 1) See detailed ordering and shipping information in the package Total Device Dissipa

1.50. bc847bm3-d.pdf Size:60K _onsemi

l Resistance, RqJA 205 �C/W BC847BM3T5G SOT-723 8000/Tape & Reel Junction-to-Ambient (Note 2) �For information on tape and reel specifications, Junction and Storage TJ, Tstg -55 to +150 �C including part orientation and tape sizes, please Temperature Range refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal ope

1.51. bc847bpdxv6t1-d.pdf Size:76K _onsemi

ditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and 4F = Specific Device Code reliability may be affected. M = Month Code G = Pb-Free Package THERMAL CHARACTERISTICS (Note: Microdot may be in either location) Characteristic (One Junction Heated) Symbol Max Unit ORDERING INFORMATION Total Device Dissipation TA = 25�C PD 357 (Note 1) mW Device Package Shipping� Derate above 25�C 2.9 mW/�C (Note 1)

1.52. bc846_bc847_bc848_series.pdf Size:128K _onsemi

sses above the (Note: Microdot may be in either location) Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit ORDERING INFORMATION Total Device Dissipation FR- 5 Board, See detailed ordering and shipping information in the package (Note 1) TA = 25�C PD 150 mW dimensions section on page 12 of this data sheet. Thermal Resistance, Junction-to-Ambient RqJA 833 �C/W Junction and Storage Temperature TJ, Tstg -55 to �C +150

1.53. bc846bpdw1t1g_bc847bpdw1t1g_bc848cpdw1t1g.pdf Size:166K _onsemi

6 VCBO -80 V Device Mark Package Shipping� BC847 -50 BC846BPDW1T1G BB SOT-363 3000 / BC848 -30 (Pb-Free) Tape & Reel Emitter-Base Voltage VEBO -5.0 V BC847BPDW1T1G SOT-363 3000 / BF Collector Current - Continuous IC -100 mAdc (Pb-Free) Tape & Reel Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommen- BC847BPDW1T2G BF SOT-363 3000 / ded Operating Conditions is not implied. Extended exposure to st

1.54. bc846-bc847-bc848.pdf Size:77K _rectron

L TEST CONDITION MIN MAX UNITS VCB = 30V, IE = 0 Collector Cut Off Current 15 nA ICBO VCB = 30V, IE = 0, Tj = 150oC 4 uA IC = 2mA, VCE = 5V Base Emitter On Voltage 0.58 0.7 VBE(on)* V IC = 10mA, VCE = 5V 0.77 IC = 10mA, IB = 0.5mA Collector Emitter Saturation Voltage 0.25 VCE(Sat) V IC = 100mA, IB = 5mA 0.60 IC = 10mA, IB = 0.5mA Base Emitter Saturation Voltage 0.7 VBE(Sat)*** V IC = 100mA, IB = 5mA 0.9 hFE IC = 10uA, VCE = 5V DC Current Gain BC846A/BC847A/BC848A 90 BC8

1.55. bc847s.pdf Size:279K _secos

llector cut-off current I nA CBO V =30V, I =0 15 CB E DC current gain h FE(1) V =5V, I =2mA 110 630 CE C VCE(sat) V I =10mA, I =0.5mA 0.25 C B Collector-emitter saturation voltage V V CE(sat)(2) I =100mA, I =5mA 0.65 C B V V BE V =5V, I =2mA 0.7 CE C Base-emitter voltage VBE(2) V V =5V, I =10mA 0.77 CE C MHz Transition frequency f V =5V, I =20mA , f=100MHz 200 T CE C Collector output capacitance C pF ob V =10V, I =0, f=1MHz 2 CB E http://www.SeCoSGmbH.

1.56. bc846a-bc847a-bc848a.pdf Size:302K _secos

C848 VCB= 30 V , IE=0 Collector cut-off current BC846 VCE= 60 V , IB=0 BC847 ICEO VCE= 45 V , IB=0 0.1 A BC848 VCE= 30 V , IB=0 Emitter cut-off current IEBO VEB= 5 V , IC=0 0.1 A DC current gain BC846A,847A,848A 110 220 BC846B,847B,848B HFE 1 VCE= 5V, IC= 2mA 200 450 BC847C,BC848C 420 800 Collector-emitter saturation voltage VCE(sat) IC=100mA, IB= 5 mA 0.5 V Base-emitter saturation voltage VBE(sat) IC= 100 mA, IB= 5mA 1.1 V VCE= 5 V, IC= 10mA Transition frequency f 100 M

1.57. bc847pn.pdf Size:693K _secos

0 V IC = 10 mA, IB = 0 Collector-Emitter Breakdown Voltage V(BR)CEO 45 V Emitter-Base Breakdown Voltage IE=1?A, IC=0 V(BR)EBO 6 V Collector Cutoff Current VCB=30V, IE=0 ICBO 15 nA Emitter Cutoff Current VEB=5V, IC=0 IEBO 15 nA DC Current Gain VCE=5V, IC=2mA hFE 200 450 IC=10mA, IB=0.5mA VCE(sat) 0.25 V Collector-emitter Saturation Voltage IC=100mA, IB=5mA VCE(sat) 0.6 V IC=10mA, IB=0.5mA VBE(sat) 0.7 V Base-Emitter Saturation Voltage IC=100mA, IB=5mA VBE(sat) 0.9 V IC=10mA, VCE=5

1.58. bc847bv.pdf Size:639K _secos

Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=10µA,IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA,IB=0 45 V Emitter-base breakdown voltage V(BR)EBO IE=1µA,IC=0 6 V Collector cut-off current ICBO VCB=30V,IE=0 15 nA Emitter cut-off current IEBO VEB=5V,IC=0 100 nA DC current gain hFE(1) VCE=5V,IC=2mA 200 450 IC=10mA,IB=0.5mA 100 mV Collector-emitter saturation voltage VCE(sat) IC=100mA,IB=5mA 300 IC=10mA,IB=0.5mA

1.59. bc846w,bc847w,bc848w.pdf Size:898K _secos

W VEBO 6 V BC848W 5 Collector Current - Continuous IC 0.1 A Collector Power Dissipation PC 150 mW Junction, Storage Temperature TJ, TSTG 150, -55 ~ 150 ? 24-Mar-2010 Rev. A Page 1 of 4 BC846AW,BW BC847AW, BW, CW Elektronische Bauelemente BC848AW, BW, CW NPN Plastic Encapsulate Transistor ELECTRICAL CHARACTERISTICS ( Tamb = 25°C unless otherwise specified ) PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS BC846W 80 Collector to Base Breakdown Voltage BC847W VCBO 50 -

1.60. bc847t.pdf Size:140K _secos

issipation PC 150 mW Junction, Storage Temperature TJ, TSTG 150, -55 ~ 150 ? http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 06-Jan-2011 Rev. A Page 1 of 3 BC847AT /BC847BT /BC847CT NPN Plastic Encapsulate Transistor Elektronische Bauelemente ELECTRICAL CHARACTERISTICS ( TA = 25°C unless otherwise specified ) Min. Typ. Max. Unit Test Conditions Parameter Symbol Collector to Base Breakdown Voltage VCBO 50 - - V IC = 10 ?A, IE = 0 Collec

1.61. bc846w_bc847w_bc848w.pdf Size:35K _kec

C847W-C BC848W-A BC848W-B BC848W-C MARK 1A 1B 1E 1F 1G 1J 1K 1L 2008. 8. 29 Revision No : 4 1/3 J A G C L BC846W/7W/8W ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=30V, IE=0 Collector Cut-off Current - - 15 nA BC846W 110 - 450 hFE VCE=5V, IC=2mA DC Current Gain (Note) BC847W 110 - 800 BC848W 110 - 800 VCE(sat) 1 IC=10mA, IB=0.5mA - 0.09 0.25 Collector-Emitter Saturation Voltage V VCE(sat) 2 IC=100mA, IB=5mA - 0.2 0.6

1.62. bc846_bc847_bc848.pdf Size:43K _kec

C846A BC846B BC847A BC847B BC847C BC848A BC848B BC848C MARK 1A 1B 1E 1F 1G 1J 1K 1L 2008. 8. 13 Revision No : 3 1/3 D A G H N C J K BC846/7/8 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=30V, IE=0 Collector Cut-off Current - - 15 nA BC846 110 - 450 hFE VCE=5V, IC=2mA DC Current Gain (Note) BC847 110 - 800 BC848 110 - 800 VCE(sat) 1 IC=10mA, IB=0.5mA - 0.09 0.25 Collector-Emitter Saturation Voltage V VCE(sat) 2 IC=1

1.63. bc847s.pdf Size:2746K _htsemi

2mA 110 630 VCE(sat)(1) IC=10mA,IB=0.5mA 0.25 V Collector-emitter saturation voltage VCE(sat)(2) IC=100mA,IB=5mA 0.65 V VBE(1) VCE=5V,IC=2mA 0.58 0.7 V Base-emitter voltage VBE(2) VCE=5V,IC=10mA 0.77 V Transition frequency VCE=5V,IC=20mA ,f=100MHz 200 MHz f T Collector output capacitance Cob VCB=10V,IE=0,f=1MHz 2 pF *pulse test: Pulse Width ?300?s, Duty Cycle? 2.0%. 1 JinYu www.htsemi.com semiconductor Date:2011/ 05 BC847S Typical Characteristics IC —— VCE hFE —�

1.64. bc847.pdf Size:2003K _htsemi

IC= 10µA, IE=0 50 V BC848 30 Collector-emitter breakdown voltage BC846 65 BC847 VCEO IC= 10mA, IB=0 45 V BC848 30 Emitter-base breakdown voltage VEBO IE= 10µA, IC=0 6 V Collector cut-off current BC846 VCB=70 V , IE=0 BC847 ICBO VCB=50 V , IE=0 0.1 ?A BC848 VCB=30 V , IE=0 Collector cut-off current BC846 VCE=60 V , IB=0 BC847 ICEO VCE=45 V , IB=0 0.1 ?A BC848 VCE=30 V , IB=0 Emitter cut-off current IEBO VEB=5 V , IC=0 0.1 ?A DC current gain BC846A,847A,848A 110

1.65. bc847bv.pdf Size:593K _htsemi

hFE(1) VCE=5V,IC=2mA 200 450 IC=10mA,IB=0.5mA 100 Collector-emitter saturation voltage VCE(sat) mV IC=100mA,IB=5mA 300 IC=10mA,IB=0.5mA 700 Base-emitter saturation voltage VBE(sat) mV IC=100mA,IB=5mA 900 VCE=5V,IC=2mA 580 660 700 Base-emitter voltage VBE mV VCE=5V,IC=10mA 770 Transition frequency fT VCE=5V,IC=10mA,f=100MHz 100 MHz Output capacitance Cob VCB=10V,IE=0,f=1MHz 4.5 pF VCE=5V,Rs=2k?, Noise Figure NF 10 dB f=1kHz,BW=200Hz 1 JinYu www.htsemi.com semiconducto

1.66. bc847pn.pdf Size:237K _lge

VCE=5V,IC=2mA 200 450 VCE(sat) IC=10mA,IB=0.5mA 0.25 V Collector-emitter saturation voltage VCE(sat) IC=100mA,IB=5mA 0.6 V VBE(sat) IC=10mA,IB=0.5mA 0.7 V Base-emitter saturation voltage VBE(sat) IC=100mA,IB=5mA 0.9 V VBE(on) VCE=5V,IC=2mA 0.58 0.7 V Base-emitter voltage VBE(on) VCE=5V,IC=10mA 0.72 V Collector output capacitance Cob VCB=10V,IE=0,f=1MHz 6.0 pF Transition frequency fT VCE=5V,IC=10mA,f=100MHz 100 MHz VCE=5V,Ic=0.2mA, Noise figure NF 10 dB f=1kHz,Rg=2K?,?f=200Hz

1.67. bc847bv.pdf Size:267K _lge

ICBO VCB=30V,IE=0 15 nA Emitter cut-off current IEBO VEB=5V,IC=0 100 nA DC current gain hFE(1) VCE=5V,IC=2mA 200 450 IC=10mA,IB=0.5mA 100 Collector-emitter saturation voltage VCE(sat) mV IC=100mA,IB=5mA 300 IC=10mA,IB=0.5mA 700 Base-emitter saturation voltage VBE(sat) mV IC=100mA,IB=5mA 900 VCE=5V,IC=2mA 580 660 700 Base-emitter voltage VBE mV VCE=5V,IC=10mA 770 Transition frequency fT VCE=5V,IC=10mA,f=100MHz 100 MHz Output capacitance Cob VCB=10V,IE=0,f=1MHz 4.5 pF VCE=5V

1.68. bc847t.pdf Size:201K _lge

AT 110 220 BC847BT hFE VCE= 5V, IC= 2mA 200 450 BC847CT 420 800 IC=10mA, IB=0. 5mA 0.25 Collector-emitter saturation voltage VCE(sat) V IC=100mA, IB= 5mA 0.6 IC=10mA, IB=0. 5mA 0.7 Base-emitter saturation voltage VBE(sat) V IC=100mA, IB= 5mA 0.9 VCE= 5V, IC= 2mA 580 660 700 Base-emitter voltage VBE(on) V VCE= 5V, IC= 10mA 770 VCE= 5 V, IC= 10mA Transition frequency fT 100 MHz f=100MHz Collector output capacitance Cob VCB=10V,f=1MHz 4.5 pF Noise figure BC847BT VCE=5V,f=1

1.69. bc847s.pdf Size:568K _wietron

) A=2 x Characteristics ymbol Min TYP Ma Unit S On Characteristics DC Current Gain 630 - hFE 110 - - , 2 m (IC= A VCE = 5 ) V Collector-Emitter Saturation Voltage - 0.25 , IB= 0.5mA ) (IC= 10 mA VCE(sat) - V - - (IC= 100mA 0.65 , IB= 5 mA ) B ase-Emitter Saturation Voltage - ( IC= 2mA VCE = 5 V , ) 0.7 VBE(sat) - V - - 0.77 ( , IC=10 mA) VCE = 5 V Small-signal Characteristics Current-Gain-Bandwidth Product MHz fT - 200 - (VCE = 5 V , IC= 20 mA , f=100MH

1.70. bc847at.pdf Size:144K _wietron

(I = 10mA) C Collector-Emitter Breakdown Voltage - - V V(BR)CES 50 (IC=10 uA ,VEB=0) Collector-Base Breakdown Voltage V V(BR)CBO - - 50 (IC=10 uA) Emitter-Base Breakdown Voltage - V(BR)EBO - V 6.0 (IE=1.0 uA) Collector Cutoff Current (VCB=30V) 15 nA - ICBO - (VCB=30V, TA=150 C) 5.0 mA On Characteristics DC Current Gain BC847A - - 90 - hFE (IC= 10uA, VCE=5.0V) BC847B - 150 - - - BC847C 270 110 220 (IC= 2.0mA, VCE=5.0V) BC847A 180 200 450 BC847B 290 420

1.71. bc846bdw_bc847_bc848.pdf Size:101K _wietron

Breakdown Voltage (I =10mAdc) V(BR)CEO Vdc C - - 65 BC846 - - 45 BC847 - - 30 BC848 Vdc Collector-Emitter Breakdown Voltage (IC=10 uAdc, VEB=0) V(BR)CES - - 80 BC846 - - 50 BC847 - - 30 BC848 V(BR)CBO Emitter-Base Breakdown Voltage (IC=10 uAdc) Vdc - - 80 BC846 - - 50 BC847 - - 30 BC848 Emitter-Base Breakdown Voltage (IE=1.0 uAdc) V(BR)EBO Vdc - - 6.0 BC846 - - 6.0 BC847 - - 5.0 BC848 nAdc 15 ICBO - - Collector Cutoff Current (VCB=30Vd

1.72. bc846bpdw_bc847_bc848.pdf Size:495K _wietron

W = BB , BC847BPDW = 3F , BC847CPDW = 3G , BC848BPDW = 13K , BC848CPDW = 13L WEITRON 1/9 09-Oct-08 http://www.weitron.com.tw BC846BPDW Series ELECTRICAL CHARACTERISTICS (NPN) (TA = 25° unless otherwise noted) C Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage V(BR)CEO V (IC = 10 mA) BC846 Series 65 — — BC847 Series 45 — — BC848 Series 30 — — Collector–Emitter Breakdown Voltage V(BR)CES V (IC = 10 µA, VEB = 0) BC846 Se

1.73. bc846_bc847_bc848_bc849_bc850.pdf Size:204K _wietron

R qJA Thermal Resistance, Junction to Ambient (Note 2.) 417 C/W TJ,Tstg Junction and Storage, Temperature Range -55 to +150 C Device Marking BC846A=1A; BC846B=1B; BC847A=1E; BC847B=1F;BC847C=1G; BC848A=1J; BC848B;=1K; BC848C=1L;BC849B=2B; BC849C=2C; BC850B=2F; BC850C=2G 1.FR-5=1.0 x 0.75 x 0.062 in. 2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina W E I T R O N h t t p : / / w w w . w e i t r o n . c o m . t w BC846A/B-BC847A/B/C BC848A/B/C-BC849B/C WE IT R ON BC850B/C Electrica

1.74. bc846aw_bc847aw_bc848aw.pdf Size:2832K _wietron

. w e i t r o n . c o m . t w BC846AW/BW BC847AW/BW/CW WEITRON BC848AW/BW/CW Electrical Characteristics (T =25°C Unless Otherwise noted) A Characteristics Symbol Min Typ Max Unit Off Characteristics 6 5 - - Collector-Emitter Breakdown Voltage BC846A Series V - - (BR)CEO 4 5 (I =10mA) BC847A Series V C 3 0 - - BC848A Series Collector-Emitter Breakdown Voltage BC846A Series - - 8 0 V (IC=10?A,VEB=0) BC847A Series V - - (BR)CES 5 0 BC848A Series - - 3 0 BC846A Series - -

Anderen transistoren... BC846B , BC846B , BC846B , BC846B , BC846BLT1 , BC846BR , BC846BW , BC846BWT1 , BC148 , BC847A , BC847A , BC847A , BC847A , BC847ALT1 , BC847AR , BC847AW , BC847AWT1 .


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