BC858A . Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: BC858A

Werkstoff: Si

Polarity: PNP

Gesamt-Verlustleistung (Pc): 0.2

Kollektor-Basis-Sperrspannung (Ucb): 30

Kollektor-Emitter-Sperrspannung (Uce): 30

Emitter-Basis-Sperrspannung (Ueb): 5

Kollektorstrom (Ic): 0.1

Höchste Sperrschichttemperatur (Tj), °C: 150

Transitfrequenz (ft): 300

Kollektor-Kapazität (Cc), pF: 6

Kurzschluss-Stromverstärkung (hfe): 180

Transistorgehäuse: SOT23

Ersatz (vergleichstyp) für BC858A

BC858A PDF doc:

1.1. bc856alt_bc857alt_bc858alt.pdf Size:249K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC856ALT1/D BC856ALT1,BLT1 General Purpose Transistors BC857ALT1, PNP Silicon COLLECTOR BLT1,CLT1 3 BC858ALT1,BLT1, CLT1 1 BASE Motorola Preferred Devices 2 EMITTER MAXIMUM RATINGS Rating Symbol BC856 BC857 BC858 Unit 3 Collector–Emitter Voltage VCEO –65 –45 –30 V 1 Collector–Base Voltage VCBO –80 –50 –30 V 2 Emitter–Base Voltage VEBO –5.0 –5.0 –5.0 V Collector Current — Continuous IC –100 –100 –100 mAdc CASE 318–08, STYLE 6 SOT–23 (TO–236AB) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR–5 Board, (1) PD TA = 25°C 225 mW Derate above 25°C 1.8 mW/°C Thermal Resistance, Junction to Ambient RqJA 556 °C/W Total Device Dissipation PD Alumina Substrate, (2) TA = 25°C 300 mW Derate above 25°C 2.4 mW/°C Thermal Resistance, Junction to Ambient RqJA 417 °C/W Junction and Storage Temperature TJ, Tstg –55 to +150 °C DEVICE MARKING BC856ALT1 = 3A; BC856BLT1 = 3B;

1.2. bc856awt_bc857awt_bc858awt.pdf Size:251K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC856AWT1/D General Purpose Transistors BC856AWT1,BWT1 PNP Silicon BC857AWT1,BWT1 COLLECTOR BC858AWT1,BWT1, These transistors are designed for general purpose amplifier 3 applications. They are housed in the SOT–323/SC–70 which is CWT1 designed for low power surface mount applications. 1 Motorola Preferred Devices BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol BC856 BC857 BC858 Unit 3 Collector–Emitter Voltage VCEO –65 –45 –30 V 1 Collector–Base Voltage VCBO –80 –50 –30 V 2 Emitter–Base Voltage VEBO –5.0 –5.0 –5.0 V CASE 419–02, STYLE 3 Collector Current — Continuous IC –100 –100 –100 mAdc SOT–323/SC–70 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR–5 Board, (1) PD 150 mW TA = 25°C Thermal Resistance, Junction to Ambient RqJA 833 °C/W Junction and Storage Temperature TJ, Tstg –55 to +150 °C DEVICE MARKING BC856AWT1 = 3A; BC856BWT1 = 3B; BC857AWT1 = 3E; BC85

1.3. bc856bwt1_bc857bwt1_bc858awt1-series.pdf Size:143K _onsemi

BC856BWT1 Series, BC857BWT1 Series, BC858AWT1 Series General Purpose Transistors http://onsemi.com PNP Silicon COLLECTOR 3 These transistors are designed for general purpose amplifier applications. They are housed in the SC--70/SOT--323 which is designed for low power surface mount applications. 1 BASE Features ? These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS 2 Compliant EMITTER 3 SC--70/SOT--323 CASE 419 MAXIMUM RATINGS (TA =25?C unless otherwise noted) 1 STYLE 3 2 Rating Symbol Value Unit Collector-Emitter Voltage BC856 VCEO --65 V BC857 --45 MARKING DIAGRAM BC858 --30 Collector-Base Voltage BC856 VCBO --80 V BC857 --50 xx M G BC858 --30 G Emitter--Base Voltage VEBO --5.0 V 1 Collector Current -- Continuous IC --100 mAdc xx = Specific Device Code THERMAL CHARACTERISTICS M = Date Code* G = Pb--Free Package Characteristic Symbol Max Unit (Note: Microdot may be in either location) Total Device Dissipation FR-- 5 Board, PD 150 mW

1.4. bc856a-bc857a-bc858a.pdf Size:258K _secos

BC856A, B BC857A, B, C Elektronische Bauelemente BC858A, B, C A suffix of "-C" specifies halogen & lead-free FEATURES SOT-23 n A General Purpose Transistor PNP Type Dim Min Max L n Collect current : - 0.1A A 2.800 3.040 O O n Operating Temp. : -55 C ~ +150 C 3 B 1.200 1.400 S Top View B n RoHS compliant product C 0.890 1.110 1 2 D 0.370 0.500 V G G 1.780 2.040 COLLE C TOR 3 H 0.013 0.100 3 C J 0.085 0.177 1 K 0.450 0.600 1 H J D BAS E K L 0.890 1.020 2 S 2.100 2.500 2 V 0.450 0.600 E MITTE R All Dimension in mm ELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage BC856 -80 BC857 VCBO -10 A IE=0 -50 V Ic= BC858 -30 Collector-emitter breakdown voltage BC856 -65 BC857 VCEO Ic= -10 mA IB=0 -45 V BC858 -30 Emitter-base breakdown voltage VEBO -10 A IC=0 -5 V IE= Collector cut-off current BC856 VCB= -70 V , IE=0 BC857 ICBO VCB= -45 V , IE=0

1.5. bc856aw-bc857aw-bc858aw.pdf Size:444K _secos

BC856AW, BW BC857AW, BW, CW Elektronische Bauelemente BC858AW, BW, CW RoHS Compliant Product FEATURES * Ideally suited for automatic insertion * For Switching and AF Amplifier Applications SOT-323 O O * Operating Temp. : -55 C ~ +150 C Dim Min Max A A 1.800 2.200 L B 1.150 1.350 C OLLE C TOR 3 C 0.800 1.000 S Top View 3 B 12 D 0.300 0.400 G 1.200 1.400 1 V G H 0.000 0.100 B AS E 3 J 0.100 0.250 C 2 K 0.350 0.500 1 E MITTE R L 0.590 0.720 2 H J D K S 2.000 2.400 V 0.280 0.420 All Dimension in mm O MAXIMUM RATINGS* TA=25 C unless otherwise noted Symbol Parameter Value Units V VCBO Collector-Base Voltage BC856 -80 -50 BC857 -30 BC858 VCEO Collector-Emitter Voltage V -65 BC856 BC857 -45 -30 BC858 VEBO Emitter-Base Voltage -5 V IC Collector Current –Continuous -0.1 A PC* Collector Dissipation 150 mW O TJ Junction Temperature 150 C O Tstg Storage Temperature -65~150 C *Package mounted on FR4 printed circuit board.

1.6. bc856aw_bc857aw_bc858aw.pdf Size:546K _wietron

BC856AW/BW BC857AW/BW BC858AW/BW/CW COLLECTOR General Purpose Transistor 3 3 PNP Silicon 1 1 P b Lead(Pb)-Free BASE 2 2 EMITTER SOT-323(SC-70) MaximumRatings (TA=25°Cunless otherwise noted) Rating Symbol Value Unit Collector-Emitter Voltage BC856 -65 VCEO BC857 -45 V BC858 -30 Collector-Base Voltage BC856 -80 VCBO BC857 -50 V BC858 -30 Emitter-Base Voltage BC856 -5.0 VEBO BC857 -5.0 V BC858 -5.0 IC Collector Current-Continuous 100 mA Total Device Dissipation FR-5 Board(1) PD 150 mW TA=25°C R?JA 833 °C/W Thermal Resistance, Junctionto Ambient(1) TJ Junction Temperature Range -55 to +150 °C Storage Temperature Range Tstg -55 to +150 °C Device Marking BC856AW=3A; BC856BW=3B; BC857AW=3E;BC857BW=3F; BC858AW=3J; BC858BW;=3K; BC858CW=3L 1. FR-5 = 1.0 x 0.75 x 0.062 in. WEITRON 1/6 14-Jun-06 http://www.weitron.com.tw BC856AW/BW BC857AW/BW WEITRON BC858AW/BW/CW Electrical Characteristics(TA=25?C Unless Otherwise noted) Characteristi

Anderen transistoren... BC857BWT1 , BC857C , BC857CLT1 , BC857CR , BC857CW , BC857CWT1 , BC857S , BC858 , 5609 , BC858ALT1 , BC858AR , BC858AW , BC858AWT1 , BC858B , BC858BLT1 , BC858BR , BC858BW .