BC858BLT1
. Höchstzulässige Werte. Charakteristische Werte. Datenblatt. Typenbezeichnung: BC858BLT1
Werkstoff: Si
Polarity: PNP
Gesamt-Verlustleistung (Pc): 0.3
Kollektor-Basis-Sperrspannung (Ucb): 30
Kollektor-Emitter-Sperrspannung (Uce): 30
Emitter-Basis-Sperrspannung (Ueb): 5
Kollektorstrom (Ic): 0.1
Höchste Sperrschichttemperatur (Tj), °C: 150
Transitfrequenz (ft): 300
Kollektor-Kapazität (Cc), pF: 6
Kurzschluss-Stromverstärkung (hfe): 290
Transistorgehäuse: SOT23
Ersatz (vergleichstyp) für BC858BLT1
BC858BLT1
- PDF-Dokument zum Download bereitstellen...
4.1. bc858bw-b.pdf  Size:141K _rohm  |
 | r dissipation PC W ?
0.35
Junction temperature Tj 150 ?C
Storage temperature Tstg -65 to +150 ?C
? When mounted on 7 ? 5 ? 0.6 mm ceramic board.
Electrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage BVCBO -30 - - V IC= -50µA
Collector-emitter breakdown voltage BVCEO -30 - - V IC= -1mA
Emitter-base breakdown voltage BVEBO -5 - - V IE= -50µA
- - -100 nA VCB= -30V
Collector cutoff current ICBO
- - 4 µA VCB= -30V, Ta=150°C |
4.2. bc858bw.pdf Size:141K _rohm  |
 | r dissipation PC W ?
0.35
Junction temperature Tj 150 ?C
Storage temperature Tstg -65 to +150 ?C
? When mounted on 7 ? 5 ? 0.6 mm ceramic board.
Electrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage BVCBO -30 - - V IC= -50µA
Collector-emitter breakdown voltage BVCEO -30 - - V IC= -1mA
Emitter-base breakdown voltage BVEBO -5 - - V IE= -50µA
- - -100 nA VCB= -30V
Collector cutoff current ICBO
- - 4 µA VCB= -30V, Ta=150°C |
4.3. bc858bw_bc858b.pdf Size:81K _rohm  |
 | tion PC W ?
0.35
Junction temperature Tj 150 ?C
Storage temperature Tstg -55~+150 ?C
? When mounted on 7 ? 5 ? 0.6 mm ceramic board.
Electrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage BVCBO -30 - - V IC=-50µA
Collector-emitter breakdown voltage BVCEO -30 - - V IC=-1mA
Emitter-base breakdown voltage BVEBO -5 - - V IE=-50µA
Collector cutoff current ICBO - - -15 nA VCB=-30V
- - -0.3 V IC/IB=-10mA/-0.5mA
Collector-emitte |
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.
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