BC860CWT1 >> Datenblatt. Höchstzulässige Werte. Charakteristische Werte

ONS MIN. MAX. UNIT VCBO collector-base voltage open emitter BC859W - -30 V BC860W - -50 V VCEO collector-emitter voltage open base BC859W - -30 V BC860W - -45 V VEBO emitter-base voltage open collector - -5 V IC collector current (DC) - -100 mA ICM peak collector current - -200 mA IBM peak base current - -200 mA Ptot total power dissipation Tamb ? 25 �C; note 1 - 200 mW Tstg storage temperature -65 +150 �C Tj junction temperature - 150 �C Tamb operating ambient temperature -65 +150

5.2. bc859_bc860.pdf Size:131K _philips

XP Semiconductors Product data sheet PNP general purpose transistors BC859; BC860 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter BC859 - -30 V BC860 - -50 V VCEO collector-emitter voltage open base BC859 - -30 V BC860 - -45 V VEBO emitter-base voltage open collector - -5 V IC collector current (DC) - -100 mA ICM peak collector current - -200 mA IBM peak base curre

5.3. bc859w_bc860w_4.pdf Size:51K _philips

ONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter BC859W --30 V BC860W --50 V VCEO collector-emitter voltage open base BC859W --30 V BC860W --45 V VEBO emitter-base voltage open collector --5V IC collector current (DC) --100 mA ICM peak collector current --200 mA IBM peak base current --200 mA Ptot total power dissipation Tamb ? 25 �C; note 1 - 200 mW Tstg storage temperature -65 +150 �C Tj junction temperature - 150 �C Tamb operating ambient temperature -65 +150 �C

5.4. bc859_bc860_4.pdf Size:51K _philips

BC859 --30 V BC860 --50 V VCEO collector-emitter voltage open base BC859 --30 V BC860 --45 V VEBO emitter-base voltage open collector --5V IC collector current (DC) --100 mA ICM peak collector current --200 mA IBM peak base current --200 mA Ptot total power dissipation Tamb ? 25 �C; note 1 - 250 mW Tstg storage temperature -65 +150 �C Tj junction temperature - 150 �C Tamb operating ambient temperature -65 +150 �C Note 1. Transistor mounted on an FR4 printed-circuit board. 1999 Ma

5.5. bc856_bc857_bc858_bc859_bc860.pdf Size:144K _fairchild_semi

IE=0 -15 nA hFE DC Current Gain VCE= -5V, IC= -2mA 110 800 VCE (sat) Collector-Emitter Saturation Voltage IC= -10mA, IB= -0.5mA -90 -300 mV IC= -100mA, IB= -5mA -250 -650 mV VBE (sat) Base-Emitter Saturation Voltage IC= -10mA, IB= -0.5mA -700 mV IC= -100mA, IB= -5mA -900 mV VBE (on) Base-Emitter On Voltage VCE= -5V, IC= -2mA -600 -660 -750 mV VCE= -5V, IC= -10mA -800 mV fT Current Gain Bandwidth Product VCE= -5V, IC= -10mA 150 MHz f=100MHz Cob Output Capacitance VCB= -10V, IE=0, f=1MHz

5.6. bc856_bc857_bc858_bc859_bc860.pdf Size:56K _samsung

-10mA, IB= -0.5mA Collector-Base Saturation Voltage -700 mV IC= -100mA, IB= -5mA -900 mV VBE (on) VCE= -5V, IC= -2mA Base-Emitter On Voltage -600 -660 -750 mV VCE= -5V, IC= -10mA -800 mV fT VCE= -5V, IC= -10mA Current Gain Bandwidth Product 150 MHz f=100MHz Collector-Base Capacitance CCBO VCB= -10V, f=1MHz 6 pF Noise Figure :BC856/857/858 NF VCE= -5V, IC= -200 10 dB 2 f=1KHz, RG=2 :BC859/860 4 dB 1 VCE= -5V, IC= -200 :BC859 NF 4 dB 1.2 RG=2 :BC860 2 dB 1.2 f=30~1500

5.7. bc856_bc857_bc858_bc859_bc860.pdf Size:271K _siemens

ltage VCES 80 50 30 Emitter-base voltage VEB0 555 Collector current IC 100 mA Peak collector current ICM 200 Peak base current IBM 200 Peak emitter current IEM 200 330 Total power dissipation, TS = 71 ?C Ptot mW Junction temperature Tj 150 ?C Storage temperature range Tstg � 65 � + 150 Thermal Resistance Junction - ambient1) Rth JA ? 310 K/W Junction - soldering point Rth JS ? 240 1) Package mounted on epoxy pcb 40 mm ? 40 mm ? 1.5 mm/6 cm2 Cu. Semiconductor Group 2 BC 856 ... B

5.8. bc856w_bc857w_bc858w_bc859w_bc860w.pdf Size:273K _siemens

V Collector-emitter voltage VCES 80 50 30 V Emitter-base voltage VEBO 55 5 V Collector current IC 100 mA Collector peak current ICM 200 mA Total power dissipation, TS = 115 ?C Ptot 250 mW Junction temperature Tj 150 ?C Storage temperature range Tstg �65 to 150 ?C Thermal Resistance Junction - ambient1) Rth JA ? 240 K/W Junction - soldering point Rth JS ? 105 K/W Semiconductor Group 2 BC 856W ... BC 860W Electrical Characteristics at TA = 25 ?C, unless otherwise specified. Paramet

5.9. bc856_bc857_bc858_bc859_bc860.pdf Size:35K _diodes

i T i T VI T � � T 8 � � T � � T � � BC856 BC857 BC858 BC859 BC860 ELECTRICAL CHARACTERISTICS (Continued) T 8 8 8 8 8 8 IT DITI i VI i I T V V i T I V V i I T 8 V V T I V V T I V V i I T V V T I V V T I V V i I T V V 8 8 8 8 T I V V T i i T T I V V II T V V i i i iI I i

5.10. bc856series_bc857series_bc858series_bc859series_bc860series.pdf Size:140K _infineon

Ls 1=B 2=E 3=C - - - SOT23 BC858CW 3Ls 1=B 2=E 3=C - - - SOT323 BC859B 4Bs 1=B 2=E 3=C - - - SOT23 BC859C 4Cs 1=B 2=E 3=C - - - SOT23 BC860B 4Fs 1=B 2=E 3=C - - - SOT23 BC860BW 4Fs 1=B 2=E 3=C - - - SOT323 BC860CW 4Gs 1=B 2=E 3=C - - - SOT323 2007-09-25 2 BC856...-BC860... Maximum Ratings Parameter Symbol Value Unit V Collector-emitter voltage VCEO BC856... 65 BC857..., BC860... 45 BC858..., BC859... 30 Collector-base voltage VCBO BC856... 80 BC857..., BC860... 50 BC

5.11. bc859_bc860.pdf Size:41K _kec

eakdown Voltage BC860 -45 - - BC859 -30 - - Collector-Base V(BR)CBO IC=-10 A, IE=0 V Breakdown Voltage BC860 -50 - - V(BR)EBO Emitter-Base Breakdown Voltage IE=-10 A, IC=0 -5 - - V ICBO VCB=-30V, IE=0 Collector Cut-off Current - - -15 nA hFE IC=-2mA, VCE=-5V DC Current Gain 125 - 475 VBE(ON) 1 IC=-2mA, VCE=-5V -0.6 -0.65 -0.75 Base-Emitter Voltage V VBE(ON) 2 IC=-10mA, VCE=-5V - - -0.82 VCE(sat) 1 IC=-10mA, IB=-0.5mA - -0.075 -0.3 Collector-Emitter Saturation Voltage V VCE(

Anderen transistoren... BC860BLT1 , BC860BR , BC860BW , BC860BWT1 , BC860C , BC860CLT1 , BC860CR , BC860CW , TIP42C , BC868 , BC869 , BC875 , BC876 , BC877 , BC878 , BC879 , BC880 .


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