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BCP69T3
. Höchstzulässige Werte. Charakteristische Werte. Datenblatt. Typenbezeichnung: BCP69T3
Werkstoff: Si
Polarity: PNP
Gesamt-Verlustleistung (Pc): 1.5
Kollektor-Basis-Sperrspannung (Ucb): 25
Kollektor-Emitter-Sperrspannung (Uce): 25
Emitter-Basis-Sperrspannung (Ueb): 5
Kollektorstrom (Ic): 1
Höchste Sperrschichttemperatur (Tj), °C: 150
Transitfrequenz (ft): 60
Kollektor-Kapazität (Cc), pF: 45
Kurzschluss-Stromverstärkung (hfe): 85
Transistorgehäuse: SP0
Ersatz (vergleichstyp) für BCP69T3
BCP69T3
- PDF-Dokument zum Download bereitstellen...
4.1. bcp69t1rev2.pdf  Size:71K _motorola  |
 | 3
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating Symbol Value Unit
Collector-Emitter Voltage VCEO –25 Vdc
Collector-Base Voltage VCBO –20 Vdc
Emitter-Base Voltage VEBO –5.0 Vdc
Collector Current IC –1.0 Adc
Total Power Dissipation @ TA = 25°C(1) PD 1.5 Watts
Derate above 25°C 12 mW/°C
Operating and Storage Temperature Range TJ, Tstg –65 to 150 °C
DEVICE MARKING
CE
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance — Junction-to-Ambient (surface mou |
4.2. bcp69t1-d.pdf Size:96K _onsemi  |
 | Emitter-Base Voltage VEBO -5.0 Vdc 4
1
Collector Current IC -1.0 Adc
2
AYW
3
Total Power Dissipation @ TA = 25°C (Note 1) PD 1.5 W
CEG
Derate above 25°C 12 mW/°C
SOT-223 (TO-261)
G
CASE 318E
Operating and Storage Temperature Range TJ, Tstg -65 to °C
STYLE 1
150
THERMAL CHARACTERISTICS
CE = Specific Device Code
Characteristic Symbol Max Unit
A = Assembly Location
Y = Year
Thermal Resistance - Junction-to-Ambient RqJA 83.3 °C/W
W = Work Week
(Surface Mounted)
G = Pb-Free Pac |
5.1. bcp69_3.pdf Size:50K _philips  |
 | ector current --2A
IBM peak base current --200 mA
Ptot total power dissipation Tamb ? 25 °C; note 1 - 1.35 W
Tstg storage temperature -65 +150 °C
Tj junction temperature - 150 °C
Tamb operating ambient temperature -65 +150 °C
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
1999 Apr 08 2
Philips Semicond |
5.2. bcp69.pdf Size:95K _philips  |
 | ata …continued
Symbol Parameter Conditions Min Typ Max Unit
hFE DC current gain VCE = -1V;
IC = -500 mA
BCP69 85 - 375
BCP69-16 100 - 250
BCP69-16/DG
BCP69-16/IN 140 - 230
BCP69-25 160 - 375
2. Pinning information
Table 3. Pinning
Pin Description Simplified outline Graphic symbol
1 base
4 2, 4
2 collector
3 emitter
1
4 collector
1 2 3
3
sym028
3. Ordering information
Table 4. Ordering information
Type number[1] Package
Name Description Version
BCP69 SC-73 plastic surface |
5.3. bcp69.pdf Size:117K _fairchild_semi  |
 | Dissipation 1.0 W
Derate above 25°C 8.0 mW/°C
R?JA Thermal Resistance, Junction to Ambient 125 °C/W
* Device mounted on FR-4 PCB 36mm ? 18mm ? 1.5mm; mounting pad for the collector lead min. 6cm2
Electrical Characteristics* Ta = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVCEO Collector-Emitter Breakdown Voltage IC = -10mA, IB = 0 -20 V
BVCBO Collector-Base Breakdown Voltage IC = -1.0mA, IE = 0 -30 V
BVEBO Emitter-Base Breakdown Voltage IE = -100µA |
5.4. bcp69.pdf Size:136K _siemens  |
 | 40 mm ? 1.5 mm/6 cm2 Cu.
01.97
Semiconductor Group 1
BCP 69
Electrical Characteristics
at TA = 25 ?C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
DC characteristics
Collector-emitter breakdown voltage V(BR)CE0 20 – – V
IC = 30 mA, IB = 0
Collector-emitter breakdown voltage V(BR)CES 25 – –
IC = 10 µA, VBE = 0
Collector-base breakdown voltage V(BR)CB0 25 – –
IC = 10 µA, IB = 0
Emitter-base breakdown voltage V(BR)EB0 5––
IE = 10 µA, IB = 0
Collector-bas |
5.5. cbcp68_cbcp69.pdf Size:363K _central  |
 |
BVCBO IC=10µA 25 V
BVCEO IC=10mA 20 V
BVEBO IE=1.0µA 5.0 V
VCE(SAT) IC=1.0A, IB=100mA 0.5 V
VBE(ON) VCE=10V, IC=5.0mA 0.6 V
VBE(ON) VCE=1.0V, IC=1.0A 1.0 V
hFE VCE=10V, IC=5.0mA 50
hFE VCE=1.0V, IC=500mA 85 375
hFE VCE=1.0V, IC=1.0A 60
fT VCE=5.0V, IC=10mA, f=20MHz 65 MHz
Cob VCB=5.0V, IE=0, f=450kHz 25 pF
R5 (4-January 2010)
CBCP68 NPN
CBCP69 PNP
SURFACE MOUNT
COMPLEMENTARY
SMALL SIGNAL SILICON
TRANSISTORS
SOT-223 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) BASE
2) COLLECTOR |
5.6. bcp69.pdf Size:43K _diodes 5.7. bcp69-25.pdf Size:517K _infineon  |
 | pecified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
20 - - V
Collector-emitter breakdown voltage V(BR)CEO
IC = 30 mA, IB = 0
Collector-base breakdown voltage V(BR)CBO 25 - -
IC = 10 µA, IE = 0
Collector-emitter breakdown voltage V(BR)CES 25 - -
IC = 10 µA, VBE = 0
Emitter-base breakdown voltage V(BR)EBO 5 - -
IE = 10 µA, IC = 0
Collector-base cutoff current ICBO µA
VCB = 25 V, IE = 0 - - 0.1
VCB = 25 V, IE = 0 , TA = 150 °C - - 100
-
DC current gain2) hFE |
5.8. bcp69.pdf Size:800K _secos  |
 | VCBO - 25 - - V
Collector-Emitter Breakdown Voltage
BVCEO - 20 - - V IC=-1mA, IB=0
Emitter-Base Breakdown Voltage
BVEBO -5 - - V IE=-10µA, IC=0
Collector-Base Cutoff Current
ICBO - - - 10 uA VCB=- 25V, IE=0
Emitter-Base Cutoff Current
IEBO
- - - 10 uA VEB=-5V, IC=0
Collector Saturation Voltage -
mV
*VCE(sat)1 - - 500 IC=-1mA, IB=-100mA
Base-Emitter Voltage
*VBE(on) - - - 1.0 V VCE=-1V, IC=-1A
- - VCE=-10V, IC=-5mA
*hFE1 50
DC Current Gain
*hFE2 85 - 375 VCE=- |
5.9. bcp69.pdf Size:209K _wietron  |
 | RISTICS (TA=25?C Unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS(1)
DC Current Gain
VCE=-10V, IC=-5mA hFE1 50 - -
VCE=-1V, IC=-500mA hFE2 85 - 375
-
VCE=-1V, IC=-1A hFE3 60 - -
Collector-Emitter Saturation Voltage
VCE(sat) - - -500 mV
IC=-1A, IB=-100mA
Base-Emitter On Voltage
VBE(on) -
V
- -1.0
VCE=-1V, IC=-1A
Transition Frequency
fT - 60 - MHz
VCE=-10V, IC=-100mA, f=50MHz
Note 1.Pulse Test : Pulse width < 380µs, Duty cycle ? 2%.
WEITRON
2/ |
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