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BCR183
. Höchstzulässige Werte. Charakteristische Werte. Datenblatt. Typenbezeichnung: BCR183
Werkstoff: Si
Polarity: PNP
Gesamt-Verlustleistung (Pc): 0.2
Kollektor-Basis-Sperrspannung (Ucb): 50
Kollektor-Emitter-Sperrspannung (Uce): 50
Emitter-Basis-Sperrspannung (Ueb): 10
Kollektorstrom (Ic): 0.1
Höchste Sperrschichttemperatur (Tj), °C: 150
Transitfrequenz (ft): 200
Kollektor-Kapazität (Cc), pF: 3
Kurzschluss-Stromverstärkung (hfe): 30
Transistorgehäuse: SOT23
Ersatz (vergleichstyp) für BCR183
BCR183
PDF doc:
1.1. bcr183w.pdf  Size:34K _siemens  |
 | BCR 183W
PNP Silicon Digital Transistor
• Switching circuit, inverter, interface circuit,
driver circuit
• Built in resistor (R1 = 10k?, R2 = 10k?)
Type Marking Ordering Code Pin Configuration Package
BCR 183W WMs Q62702-C2276 1 = B 2 = E 3 = C SOT-323
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage VCEO 50 V
Collector-base voltage VCBO 50
Emitter-base voltage VEBO 10
Input on Voltage Vi(on) 20
DC collector current IC 100 mA
Total power dissipation, TS = 124°C Ptot 250 mW
Junction temperature Tj 150 °C
Storage temperature Tstg - 65 ... + 150
Thermal Resistance
1)
Junction ambient RthJA ? 240 K/W
Junction - soldering point RthJS ? 105
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu
Semiconductor Group 1 Nov-27-1996
BCR 183W
Electrical Characteristics at TA=25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage V(BR)CEO V
IC = 100 µA, IB = 0 50 - -
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1.2. bcr183.pdf Size:35K _siemens  |
 | BCR 183
PNP Silicon Digital Transistor
• Switching circuit, inverter, interface circuit,
driver circuit
• Built in resistor (R1 = 10k?, R2 = 10k?)
Type Marking Ordering Code Pin Configuration Package
BCR 183 WMs Q62702-C2262 1=B 2=E 3=C SOT-23
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage VCEO 50 V
Collector-base voltage VCBO 50
Emitter-base voltage VEBO 10
Input on Voltage Vi(on) 20
DC collector current IC 100 mA
Total power dissipation, TS = 102°C Ptot 200 mW
Junction temperature Tj 150 °C
Storage temperature Tstg - 65 ... + 150
Thermal Resistance
1)
Junction ambient RthJA ? 350 K/W
Junction - soldering point RthJS ? 240
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu
Semiconductor Group 1 Dec-12-1996
BCR 183
Electrical Characteristics at TA=25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage V(BR)CEO V
IC = 100 µA, IB = 0 50 - -
Collector-b |
1.3. bcr183s.pdf Size:43K _siemens  |
 | BCR 183S
PNP Silicon Digital Transistor Array
• Switching circuit, inverter, interface circuit,
driver circuit
• Built in resistor (R1 = 10k?, R2 = 10k?)
Type Marking Ordering Code Pin Configuration Package
BCR 183S WMs Q62702-C2377 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT-363
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage VCEO 50 V
Collector-base voltage VCBO 50
Emitter-base voltage VEBO 10
Input on Voltage Vi(on) 20
DC collector current IC 100 mA
Total power dissipation, TS = 115°C Ptot 250 mW
Junction temperature Tj 150 °C
Storage temperature Tstg - 65 ... + 150
Thermal Resistance
1)
Junction ambient RthJA ? 275 K/W
Junction - soldering point RthJS ? 140
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu
Semiconductor Group 1 Nov-27-1996
BCR 183S
Electrical Characteristics at TA=25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage V(BR)CEO V
IC = 100 |
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