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BCR196
. Höchstzulässige Werte. Charakteristische Werte. Datenblatt. Typenbezeichnung: BCR196
Werkstoff: Si
Polarity: PNP
Gesamt-Verlustleistung (Pc): 0.2
Kollektor-Basis-Sperrspannung (Ucb): 50
Kollektor-Emitter-Sperrspannung (Uce): 50
Emitter-Basis-Sperrspannung (Ueb): 10
Kollektorstrom (Ic): 0.07
Höchste Sperrschichttemperatur (Tj), °C: 150
Transitfrequenz (ft): 150
Kollektor-Kapazität (Cc), pF: 3
Kurzschluss-Stromverstärkung (hfe): 50
Transistorgehäuse: SOT23
Ersatz (vergleichstyp) für BCR196
BCR196
- PDF-Dokument zum Download bereitstellen...
1.1. bcr196w.pdf Size:34K _siemens |
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Collector-base breakdown voltage V(BR)CBO
IC = 10 µA, IB = 0 50 - -
Collector cutoff current ICBO nA
VCB = 40 V, IE = 0 - - 100
Emitter cutoff current IEBO µA
VEB = 10 V, IC = 0 - - 220
DC current gain hFE -
IC = 5 mA, VCE = 5 V 50 - -
Collector-emitter saturation voltage 1) VCEsat V
IC = 10 mA, IB = 0.5 mA - - 0.3
Input off voltage Vi(off)
IC = 100 µA, VCE = 5 V 1.2 - 2.6
Input on Voltage Vi(on)
IC = 2 mA, VCE = 0.3 V 1.5 - 4
Input resistor R1 32 47 62 k?
Resistor ratio R1/R2 1. |
1.2. bcr196.pdf Size:35K _siemens |
| ctor-base breakdown voltage V(BR)CBO
IC = 10 µA, IB = 0 50 - -
Collector cutoff current ICBO nA
VCB = 40 V, IE = 0 - - 100
Emitter cutoff current IEBO µA
VEB = 10 V, IC = 0 - - 220
DC current gain hFE -
IC = 5 mA, VCE = 5 V 50 - -
Collector-emitter saturation voltage 1) VCEsat V
IC = 10 mA, IB = 0.5 mA - - 0.3
Input off voltage Vi(off)
IC = 100 µA, VCE = 5 V 1.2 - 2.6
Input on Voltage Vi(on)
IC = 2 mA, VCE = 0.3 V 1.5 - 4
Input resistor R1 32 47 62 k?
Resistor ratio R1/R2 1.92 2.1 |
5.1. bcr198w.pdf Size:34K _siemens |
| - -
Collector-base breakdown voltage V(BR)CBO
IC = 10 µA, IB = 0 50 - -
Collector cutoff current ICBO nA
VCB = 40 V, IE = 0 - - 100
Emitter cutoff current IEBO µA
VEB = 10 V, IC = 0 - - 164
DC current gain hFE -
IC = 5 mA, VCE = 5 V 70 - -
Collector-emitter saturation voltage 1) VCEsat V
IC = 10 mA, IB = 0.5 mA - - 0.3
Input off voltage Vi(off)
IC = 100 µA, VCE = 5 V 0.8 - 1.5
Input on Voltage Vi(on)
IC = 2 mA, VCE = 0.3 V 1 - 3
Input resistor R1 32 47 62 k?
Resistor ratio R1/R2 |
5.2. bcr191w.pdf Size:34K _siemens |
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Collector-base breakdown voltage V(BR)CBO
IC = 10 µA, IB = 0 50 - -
Collector cutoff current ICBO nA
VCB = 40 V, IE = 0 - - 100
Emitter cutoff current IEBO µA
VEB = 10 V, IC = 0 - - 350
DC current gain hFE -
IC = 5 mA, VCE = 5 V 50 - -
Collector-emitter saturation voltage 1) VCEsat V
IC = 10 mA, IB = 0.5 mA - - 0.3
Input off voltage Vi(off)
IC = 100 µA, VCE = 5 V 0.8 - 1.5
Input on Voltage Vi(on)
IC = 2 mA, VCE = 0.3 V 1 - 2.5
Input resistor R1 15 22 29 k?
Resistor ratio R1/R2 0 |
5.3. bcr191.pdf Size:35K _siemens |
| base breakdown voltage V(BR)CBO
IC = 10 µA, IB = 0 50 - -
Collector cutoff current ICBO nA
VCB = 40 V, IE = 0 - - 100
Emitter cutoff current IEBO µA
VEB = 10 V, IC = 0 - - 350
DC current gain hFE -
IC = 5 mA, VCE = 5 V 50 - -
Collector-emitter saturation voltage 1) VCEsat V
IC = 10 mA, IB = 0.5 mA - - 0.3
Input off voltage Vi(off)
IC = 100 µA, VCE = 5 V 0.8 - 1.5
Input on Voltage Vi(on)
IC = 2 mA, VCE = 0.3 V 1 - 2.5
Input resistor R1 15 22 29 k?
Resistor ratio R1/R2 0.9 1 1.1 -
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5.4. bcr191s.pdf Size:43K _siemens |
| ristics
Collector-emitter breakdown voltage V(BR)CEO V
IC = 100 µA, IB = 0 50 - -
Collector-base breakdown voltage V(BR)CBO
IC = 10 µA, IB = 0 50 - -
Collector cutoff current ICBO nA
VCB = 40 V, IE = 0 - - 100
Emitter cutoff current IEBO µA
VEB = 10 V, IC = 0 - - 350
DC current gain hFE -
IC = 5 mA, VCE = 5 V 50 - -
Collector-emitter saturation voltage 1) VCEsat V
IC = 10 mA, IB = 0.5 mA - - 0.3
Input off voltage Vi(off)
IC = 100 µA, VCE = 5 V 0.8 - 1.5
Input on Voltage Vi(on)
IC |
5.5. bcr198.pdf Size:35K _siemens |
| ase breakdown voltage V(BR)CBO
IC = 10 µA, IB = 0 50 - -
Collector cutoff current ICBO nA
VCB = 40 V, IE = 0 - - 100
Emitter cutoff current IEBO µA
VEB = 10 V, IC = 0 - - 164
DC current gain hFE -
IC = 5 mA, VCE = 5 V 70 - -
Collector-emitter saturation voltage 1) VCEsat V
IC = 10 mA, IB = 0.5 mA - - 0.3
Input off voltage Vi(off)
IC = 100 µA, VCE = 5 V 0.8 - 1.5
Input on Voltage Vi(on)
IC = 2 mA, VCE = 0.3 V 1 - 3
Input resistor R1 32 47 62 k?
Resistor ratio R1/R2 0.9 1 1.1 -
AC |
5.6. bcr192w.pdf Size:34K _siemens |
|
Collector-base breakdown voltage V(BR)CBO
IC = 10 µA, IB = 0 50 - -
Collector cutoff current ICBO nA
VCB = 40 V, IE = 0 - - 100
Emitter cutoff current IEBO µA
VEB = 10 V, IC = 0 - - 227
DC current gain hFE -
IC = 5 mA, VCE = 5 V 70 - -
Collector-emitter saturation voltage 1) VCEsat V
IC = 10 mA, IB = 0.5 mA - - 0.3
Input off voltage Vi(off)
IC = 100 µA, VCE = 5 V 0.5 - 1.2
Input on Voltage Vi(on)
IC = 2 mA, VCE = 0.3 V 0.8 - 2.5
Input resistor R1 15 22 29 k?
Resistor ratio R1/R2 |
5.7. bcr198s.pdf Size:43K _siemens |
| istics
Collector-emitter breakdown voltage V(BR)CEO V
IC = 100 µA, IB = 0 50 - -
Collector-base breakdown voltage V(BR)CBO
IC = 10 µA, IB = 0 50 - -
Collector cutoff current ICBO nA
VCB = 40 V, IE = 0 - - 100
Emitter cutoff current IEBO µA
VEB = 10 V, IC = 0 - - 164
DC current gain hFE -
IC = 5 mA, VCE = 5 V 70 - -
Collector-emitter saturation voltage 1) VCEsat V
IC = 10 mA, IB = 0.5 mA - - 0.3
Input off voltage Vi(off)
IC = 100 µA, VCE = 5 V 0.8 - 1.5
Input on Voltage Vi(on)
IC |
5.8. bcr192.pdf Size:35K _siemens |
| -base breakdown voltage V(BR)CBO
IC = 10 µA, IB = 0 50 - -
Collector cutoff current ICBO nA
VCB = 40 V, IE = 0 - - 100
Emitter cutoff current IEBO µA
VEB = 10 V, IC = 0 - - 227
DC current gain hFE -
IC = 5 mA, VCE = 5 V 70 - -
Collector-emitter saturation voltage 1) VCEsat V
IC = 10 mA, IB = 0.5 mA - - 0.3
Input off voltage Vi(off)
IC = 100 µA, VCE = 5 V 0.5 - 1.2
Input on Voltage Vi(on)
IC = 2 mA, VCE = 0.3 V 0.8 - 2.5
Input resistor R1 15 22 29 k?
Resistor ratio R1/R2 0.42 0.47 |
5.9. bcr191series.pdf Size:179K _infineon |
| ring point1) RthJS
BCR191 ? 240
BCR191F ? 90
BCR191W ? 105
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
50 - - V
Collector-emitter breakdown voltage V(BR)CEO
IC = 100 µA, IB = 0
Collector-base breakdown voltage V(BR)CBO 50 - -
IC = 10 µA, IE = 0
Collector-base cutoff current ICBO - - 100 nA
VCB = 40 V, IE = 0
- - 350 µA
Emitter-base cutoff current IEBO
VEB = 10 V, IC = 0
50 - - -
DC curr |
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