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BCV62B
. Höchstzulässige Werte. Charakteristische Werte. Datenblatt. Typenbezeichnung: BCV62B
Werkstoff: Si
Polarity: PNP
Gesamt-Verlustleistung (Pc): 0.3
Kollektor-Basis-Sperrspannung (Ucb): 30
Kollektor-Emitter-Sperrspannung (Uce): 30
Emitter-Basis-Sperrspannung (Ueb): 6
Kollektorstrom (Ic): 0.1
Höchste Sperrschichttemperatur (Tj), °C: 150
Transitfrequenz (ft): 250
Kollektor-Kapazität (Cc), pF: 4.5
Kurzschluss-Stromverstärkung (hfe): 220
Transistorgehäuse: SOT143
Ersatz (vergleichstyp) für BCV62B
BCV62B
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5.1. bcv62_3.pdf  Size:56K _philips  |
 | BO collector-base voltage TR1 open emitter --30 V
VCEO collector-emitter voltage TR1 open base --30 V
VEBS emitter-base voltage VCE =0 --6V
IC collector current (DC) --100 mA
ICM peak collector current --200 mA
IBM peak base current TR1 --200 mA
Ptot total power dissipation Tamb ? 25 °C; note 1 - 250 mW
Tstg storage temperature -65 +150 °C
Tj junction temperature - 150 °C
Tamb operating ambient temperature -65 +150 °C
Note
1. Device mounted on an FR4 printed-circuit board.
1999 Apr 0 |
5.2. bcv62.pdf Size:145K _philips  |
 |
Table 2. Quick reference data …continued
Symbol Parameter Conditions Min Typ Max Unit
Transistor TR2
hFE DC current gain VCE = -5V; IC = -2mA
BCV62 100 - 800
BCV62A 100 - 250
BCV62B 220 - 475
BCV62C 420 - 800
2. Pinning information
Table 3. Pinning
Pin Description Simplified outline Graphic symbol
1 collector TR2;
4 3 4 3
base TR1 and TR2
2 collector TR1
TR2 TR1
3emitter TR1
4emitter TR2
1 2
1 2
006aaa843
3. Ordering information
Table 4. Ordering information
Type number |
5.3. bcv62.pdf Size:94K _siemens  |
 | 1
Semiconductor Group 1
BCV 62
Electrical Characteristics
at TA = 25 ?C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
DC characteristics for transistor T1
Collector-emitter breakdown voltage V(BR)CE0 30 – – V
IC = 10 mA, IB = 0
Collector-base breakdown voltage V(BR)CB0 30 – –
IC = 10 µA, IB = 0
Emitter-base breakdown voltage V(BR)EBS 6––
IE = 10 µA, IC = 0
Collector-base cutoff current ICB0
VCB = 30 V, IE = 0 – – 15 nA
VCB = 30 V, IE = 0, TA = 150 ?C – |
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