BCW29R
. Höchstzulässige Werte. Charakteristische Werte. Datenblatt. Typenbezeichnung: BCW29R
Werkstoff: Si
Polarity: PNP
Gesamt-Verlustleistung (Pc): 0.35
Kollektor-Basis-Sperrspannung (Ucb): 30
Kollektor-Emitter-Sperrspannung (Uce): 20
Emitter-Basis-Sperrspannung (Ueb): 5
Kollektorstrom (Ic): 0.1
Höchste Sperrschichttemperatur (Tj), °C: 150
Transitfrequenz (ft): 150
Kollektor-Kapazität (Cc), pF: 7
Kurzschluss-Stromverstärkung (hfe): 120
Transistorgehäuse: TO236
Ersatz (vergleichstyp) für BCW29R
BCW29R
PDF doc:
5.1. bcw29lt1_bcw30lt1.pdf  Size:451K _motorola  |
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SEMICONDUCTOR TECHNICAL DATA
by BCW29LT1/D
General Purpose Transistors
BCW29LT1
PNP Silicon
COLLECTOR
BCW30LT1
3
1
BASE
3
2
EMITTER
1
MAXIMUM RATINGS
2
Rating Symbol Value Unit
Collector–Emitter Voltage VCEO –32 Vdc
CASE 318–08, STYLE 6
Collector–Base Voltage VCBO –32 Vdc
SOT–23 (TO–236AB)
Emitter–Base Voltage VEBO –5.0 Vdc
Collector Current – Continuous IC –100 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR-5 Board (1) PD 225 mW
TA = 25°C
Derate above 25°C 1.8 mW/°C
Thermal Resistance, Junction to Ambient R?JA 556 °C/W
Total Device Dissipation PD 300 mW
Alumina Substrate, (2) TA = 25°C
Derate above 25°C 2.4 mW/°C
Thermal Resistance, Junction to Ambient R?JA 417 °C/W
Junction and Storage Temperature TJ, Tstg –55 to +150 °C
DEVICE MARKING
BCW29LT1 = C1; BCW30LT1 = C2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERIST |
5.2. bcw29_bcw30_2.pdf Size:111K _philips  |
 | DISCRETE SEMICONDUCTORS
DATA SHEET
BCW29; BCW30
PNP general purpose transistors
Product data sheet 2004 Jan 13
Supersedes data of 1999 Apr 13
NXP Semiconductors Product data sheet
PNP general purpose transistors BCW29; BCW30
FEATURES PINNING
• Low current (max. 100 mA)
PIN DESCRIPTION
• Low voltage (max. 32 V).
1 base
2 emitter
APPLICATIONS
3 collector
• General purpose switching and amplification.
DESCRIPTION
PNP transistor in a SOT23 plastic package.
handbook, halfpage
3
NPN complements: BCW31 and BCW32.
3
MARKING
1
TYPE NUMBER MARKING CODE(1)
2
1 2
BCW29 C1*
BCW30 C2*
Top view
MAM256
Note
1. * = p : Made in Hong Kong.
Fig.1 Simplified outline SOT23 and symbol.
* = t : Made in Malaysia.
* = W : Made in China.
ORDERING INFORMATION
PACKAGE
TYPE
NUMBER
NAME DESCRIPTION VERSION
BCW29 - plastic surface mounted package; 3 leads SOT23
BCW30
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER |
5.3. bcw29_bcw30_4.pdf Size:47K _philips  |
 | DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BCW29; BCW30
PNP general purpose transistors
1999 Apr 13
Product specification
Supersedes data of 1997 Sep 03
Philips Semiconductors Product specification
PNP general purpose transistors BCW29; BCW30
FEATURES PINNING
• Low current (max. 100 mA)
PIN DESCRIPTION
• Low voltage (max. 32 V).
1 base
2 emitter
APPLICATIONS
3 collector
• General purpose switching and amplification.
DESCRIPTION
handbook, halfpage
3
PNP transistor in a SOT23 plastic package.
3
NPN complements: BCW31 and BCW32.
1
MARKING
2
TYPE NUMBER MARKING CODE(1)
1 2
BCW29 C1?
Top view
MAM256
BCW30 C2?
Note
1. ? = p : Made in Hong Kong. Fig.1 Simplified outline SOT23 and symbol.
? = t : Made in Malaysia.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter --32 V
VCEO collector-emitter voltage open base; IC = -2mA --3 |
5.4. bcw29_bcw30.pdf Size:28K _diodes  |
 | SOT23 PNP SILICON PLANAR
BCW29
SMALL SIGNAL TRANSISTORS
BCW30
ISSUE 3 - JULY 1995
T I D T I
E
C
B
T T
SOT23
ABSOLUTE MAXIMUM RATINGS.
T V IT
II V I V V
II i V I V V
i V I V V
I I
i II I
Di i i T °
i T T T °
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
T I T IT DITI
i V I V V I V V
II i i V T 8 V I I
V I V I I
i i V T V I I
V I 8 V I I
II I I V V
µ I V V
T
i I µ V V
I V V
T
I µ V V
i
I V V
T i i T I V V
II i T I I V V
i i I V V
?
I i i I i µ D I ?
i i iI I i i
|
5.5. bcw29_bcw30.pdf Size:29K _kec  |
 | SEMICONDUCTOR
BCW29/30
TECHNICAL DATA
EPITAXIAL PLANAR PNP TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
E
L B L
FEATURES
DIM MILLIMETERS
Complementary to BCW31/32
_
+
2.93 0.20
A
B 1.30+0.20/-0.15
C 1.30 MAX
2
3 D 0.45+0.15/-0.05
E 2.40+0.30/-0.20
1
G 1.90
H 0.95
MAXIMUM RATING (Ta=25 )
J 0.13+0.10/-0.05
K 0.00 ~ 0.10
CHARACTERISTIC SYMBOL RATING UNIT
L 0.55
P P
M 0.20 MIN
VCBO
Collector-Base Voltage -30 V
N 1.00+0.20/-0.10
P 7
VCEO
Collector-Emitter Voltage -20 V
M
VEBO
Emitter-Base Voltage -5 V
IC
Collector Current -100 mA
1. EMITTER
2. BASE
PC *
Collector Power Dissipation 350 mW
3. COLLECTOR
Tj
Junction Temperature 150
Tstg -65 150
Storage Temperature Range
SOT-23
* : Package Mounted On 99.9% Alumina 10 8 0.6mm.
Marking
Lot No. Lot No.
Type Name Type Name
C1 C2
BCW29 BCW30
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
V(BR)CBO
Collector-Base Breakdown Voltag |
Anderen transistoren... BCW25
, BCW26
, BCW27
, BCW28
, BCW29
, BCW29CSM
, BCW29LT1
, BCW29LT3
, 2N4401
, BCW30
, BCW30CSM
, BCW30LT1
, BCW30LT3
, BCW30R
, BCW31
, BCW31CSM
, BCW31LT1
.
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