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BCW33R
. Höchstzulässige Werte. Charakteristische Werte. Datenblatt. Typenbezeichnung: BCW33R
Werkstoff: Si
Polarity: NPN
Gesamt-Verlustleistung (Pc): 0.35
Kollektor-Basis-Sperrspannung (Ucb): 30
Kollektor-Emitter-Sperrspannung (Uce): 20
Emitter-Basis-Sperrspannung (Ueb): 5
Kollektorstrom (Ic): 0.1
Höchste Sperrschichttemperatur (Tj), °C: 150
Transitfrequenz (ft): 300
Kollektor-Kapazität (Cc), pF: 4
Kurzschluss-Stromverstärkung (hfe): 420
Transistorgehäuse: TO236
Ersatz (vergleichstyp) für BCW33R
BCW33R
PDF doc:
5.1. bcw33lt1.pdf  Size:371K _motorola  |
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SEMICONDUCTOR TECHNICAL DATA
by BCW33LT1/D
General Purpose Transistor
BCW33LT1
NPN Silicon
COLLECTOR
3
1
3
BASE
1
2
2
EMITTER
MAXIMUM RATINGS
CASE 318–08, STYLE 6
Rating Symbol Value Unit
SOT–23 (TO–236AB)
Collector–Emitter Voltage VCEO 20 Vdc
Collector–Base Voltage VCBO 30 Vdc
Emitter–Base Voltage VEBO 5.0 Vdc
Collector Current — Continuous IC 100 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR–5 Board(1) PD 225 mW
TA = 25°C
Derate above 25°C 1.8 mW/°C
Thermal Resistance, Junction to Ambient RqJA 556 °C/W
Total Device Dissipation PD 300 mW
Alumina Substrate,(2) TA = 25°C
Derate above 25°C 2.4 mW/°C
Thermal Resistance, Junction to Ambient RqJA 417 °C/W
Junction and Storage Temperature TJ, Tstg –55 to +150 °C
DEVICE MARKING
BCW33LT1 = D3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown |
5.2. bcw31_bcw32_bcw33_2.pdf Size:112K _philips  |
 | DISCRETE SEMICONDUCTORS
DATA SHEET
BCW31; BCW32; BCW33
NPN general purpose transistors
Product data sheet 2004 Feb 06
Supersedes data of 2000 Jul 04
NXP Semiconductors Product data sheet
BCW31; BCW32;
NPN general purpose transistors
BCW33
FEATURES PINNING
• Low current (100 mA)
PIN DESCRIPTION
• Low voltage (32 V).
1 base
2 emitter
APPLICATIONS
3 collector
• General purpose switching and amplification.
DESCRIPTION
NPN transistors in a plastic SOT23 package.
handbook, halfpage
PNP complements: BCW29 and BCW30. 3
3
MARKING
1
TYPE NUMBER MARKING CODE(1)
2
BCW31 D1*
1 2
BCW32 D2*
Top view
MAM255
BCW33 D3*
Note
1. * = p : Made in Hong Kong.
* = t : Made in Malaysia. Fig.1 Simplified outline (SOT23) and symbol.
* = W : Made in China.
ORDERING INFORMATION
PACKAGE
TYPE
NUMBER
NAME DESCRIPTION VERSION
BCW31 - plastic surface mounted package; 3 leads SOT23
BCW32
BCW33
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC |
5.3. bcw31_bcw32_bcw33.pdf Size:49K _philips  |
 | DISCRETE SEMICONDUCTORS
DATA SHEET
ok, halfpage
M3D088
BCW31; BCW32; BCW33
NPN general purpose transistors
Product specification 2000 Jul 04
Supersedes data of 1999 Apr 13
Philips Semiconductors Product specification
NPN general purpose transistors BCW31; BCW32; BCW33
FEATURES PINNING
• Low current (100 mA)
PIN DESCRIPTION
• Low voltage (32 V).
1 base
2 emitter
APPLICATIONS
3 collector
• General purpose switching and amplification.
DESCRIPTION
NPN transistors in a plastic SOT23 package.
handbook, halfpage
3
PNP complements: BCW29 and BCW30.
3
1
MARKING
TYPE NUMBER MARKING CODE(1)
2
1 2
BCW31 D1?
BCW32 D2?
Top view
MAM255
BCW33 D3?
Note
1. ? = p : Made in Hong Kong. Fig.1 Simplified outline (SOT23) and symbol.
? = t : Made in Malaysia.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - 32 V
VCEO collector-emitter voltage open ba |
5.4. bcw33.pdf Size:85K _fairchild_semi  |
 | BCW33
NPN General Purpose Amplifier
• This device is designed for general purpose applications at collector
3
currents to 300mA.
• Sourced from process 07.
2
SOT-23
1
Mark: D3
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings * Ta=25°C unless otherwise noted
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 32 V
VCBO Collector-Base Voltage 32 V
VEBO Emitter-Base Voltage 5.0 V
IC Collector current (DC) 500 mA
TJ, Tstg Operating and Storage Junction Temperature Range -55 ~ +150 °C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Typ. Max. Units
Off Characteristics
V(BR)CBO Collector-Ba |
5.5. bcw31_bcw32_bcw33.pdf Size:27K _diodes  |
 | SOT23 NPN SILICON PLANAR BCW31
BCW32
SMALL SIGNAL TRANSISTORS
BCW33
ISSUE 2 - JUNE 1995
T I D T I D D
D D
E
D D
C
T T
B
ABSOLUTE MAXIMUM RATINGS.
T V IT
II V I V V
II i V I V V
i V I V V
I I
i II I
Di i i T °
i T T T °
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
T I T IT DITI
i V I V V I V V
II i V T V I I
i V I V I I
i V T V I I
i V I 8 V I I
II I I V V
µ I V V T °
I µ V V
I V V
i
I µ V V
T
I V V
i
I µ V V
8 I V V
T i i I V V
T
II i I I V V
T
i i I V V
?
I i i I i µ D I ?
i i iI I i i
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5.6. bcw33lt1-d.pdf Size:257K _onsemi  |
 | BCW33LT1G
General Purpose Transistor
NPN Silicon
Features
http://onsemi.com
• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
COLLECTOR
3
MAXIMUM RATINGS
1
BASE
Rating Symbol Value Unit
Collector - Emitter Voltage VCEO 32 Vdc
2
Collector - Base Voltage VCBO 32 Vdc
EMITTER
Emitter - Base Voltage VEBO 5.0 Vdc
3
Collector Current - Continuous IC 100 mAdc
THERMAL CHARACTERISTICS
1
Characteristic Symbol Max Unit
2
Total Device Dissipation FR-5 Board PD
SOT-23
(Note 1)
(TO-236AB)
TA = 25°C 225 mW
CASE 318
Derate above 25°C 1.8 mW/°C
STYLE 6
Thermal Resistance, RqJA 556 °C/W
Junction-to-Ambient
MARKING DIAGRAM
Total Device Dissipation PD
Alumina Substrate (Note 2),
TA = 25°C 300 mW
D3 M G
Derate above 25°C 2.4 mW/°C
G
Thermal Resistance, RqJA 417 °C/W
Junction-to-Ambient
D3 = Specific Device Code
M = Date Code*
Junction and Storage Temperature TJ, Tstg -55 to +150 °C
G = Pb-Free Package
Stresses exceeding Maximum Ratings m |
Anderen transistoren... BCW32CSM
, BCW32LT1
, BCW32LT3
, BCW32R
, BCW33
, BCW33CSM
, BCW33LT1
, BCW33LT3
, 9012
, BCW34
, BCW35
, BCW36
, BCW37
, BCW38
, BCW39
, BCW44
, BCW45
.
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