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BCW60RA
. Höchstzulässige Werte. Charakteristische Werte. Datenblatt. Typenbezeichnung: BCW60RA
Werkstoff: Si
Polarity: NPN
Gesamt-Verlustleistung (Pc): 0.15
Kollektor-Basis-Sperrspannung (Ucb): 32
Kollektor-Emitter-Sperrspannung (Uce): 32
Emitter-Basis-Sperrspannung (Ueb): 5
Kollektorstrom (Ic): 0.2
Höchste Sperrschichttemperatur (Tj), °C: 150
Transitfrequenz (ft): 250
Kollektor-Kapazität (Cc), pF: 4.5
Kurzschluss-Stromverstärkung (hfe): 120
Transistorgehäuse: SOT23
Ersatz (vergleichstyp) für BCW60RA
BCW60RA
- PDF-Dokument zum Download bereitstellen...
5.1. bcw60alt.pdf  Size:425K _motorola  |
 | x Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage V(BR)CEO 32 — Vdc
(IC = 2.0 mAdc, IE = 0)
Emitter–Base Breakdown Voltage V(BR)EBO 5.0 — Vdc
(IE = 1.0 mAdc, IC = 0)
Collector Cutoff Current ICES
(VCE = 32 Vdc) — 20 nAdc
(VCE = 32 Vdc, TA = 150°C) — 20 µAdc
Emitter Cutoff Current IEBO nAdc
(VEB = 4.0 Vdc, IC = 0) — 20
1. FR–5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company
Motorola Small–Signal Tra |
5.2. bcw60_3.pdf Size:48K _philips  |
 | - 32 V
VEBO emitter-base voltage open collector - 5V
IC collector current (DC) - 100 mA
ICM peak collector current - 200 mA
IBM peak base current - 200 mA
Ptot total power dissipation Tamb ? 25 °C - 250 mW
Tstg storage temperature -65 +150 °C
Tj junction temperature - 150 °C
Tamb operating ambient temperature -65 +150 °C
1999 Apr 22 2
Philips Semiconductors Product specification
NPN general purpose transistors BCW60 series
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE U |
5.3. bcw60.pdf Size:120K _philips  |
 |
VEBO emitter-base voltage open collector - 5 V
IC collector current (DC) - 100 mA
ICM peak collector current - 200 mA
IBM peak base current - 200 mA
Ptot total power dissipation Tamb ? 25 °C - 250 mW
Tstg storage temperature -65 +150 °C
Tj junction temperature - 150 °C
Tamb operating ambient temperature -65 +150 °C
1999 Apr 22 2
NXP Semiconductors Product data sheet
NPN general purpose transistors BCW60 series
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j- |
5.4. bcw60a_b_c_d.pdf Size:76K _fairchild_semi  |
 | CW60A VCE=1V, IC=50mA 60
: BCW60B 70
: BCW60C 90
: BCW60D 100
VCE(sat) Collector-Emitter Saturation Voltage IC=50mA, IB=1.25mA 0.55 V
IC=10mA, IB=0.25mA 0.35 V
VBE(sat) Base-Emitter Saturation Voltage IC=50mA, IB=1.25mA 0.7 1.05 V
IC=10mA, IB=0.25mA 0.6 0.85 V
VBE(on) Base-Emitter On Voltage VCE=5V, IC=2mA 0.55 0.75 V
Cob Output Capacitance VCB=10V, IE=0, f=1MHz 4.5 pF
fT Current Gain Bandwidth Product IC=10mA, VCE=5V, f=100MHz 125 MHz
NF Noise Figure IC=0.2mA, VCE=5V 6 dB
RG=2K?, f= |
5.5. bcw60_bcx70.pdf Size:282K _siemens  |
 | = 71 ?C Ptot 330 mW
Junction temperature Tj 150 ?C
Storage temperature range Tstg – 65 … + 150
Thermal Resistance
Junction - ambient1) Rth JA ? 310 K/W
Junction - soldering point Rth JS ? 240
1)
Package mounted on epoxy pcb 40 mm ? 40 mm ? 1.5 mm/6 cm2 Cu.
Semiconductor Group 2
BCW 60
BCX 70
Electrical Characteristics
at TA = 25 ?C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
DC characteristics
Collector-emitter breakdown voltage V(BR)CE0 V
IC = 10 |
Anderen transistoren... BCW60B
, BCW60BLT1
, BCW60C
, BCW60CLT1
, BCW60D
, BCW60DLT1
, BCW60FF
, BCW60FN
, 2N2219
, BCW60RB
, BCW60RC
, BCW60RD
, BCW61
, BCW61ALT1
, BCW61BLT1
, BCW61CLT1
, BCW61D
.
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