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BCW68
. Höchstzulässige Werte. Charakteristische Werte. Datenblatt. Typenbezeichnung: BCW68
Werkstoff: Si
Polarity: PNP
Gesamt-Verlustleistung (Pc): 0.35
Kollektor-Basis-Sperrspannung (Ucb): 45
Kollektor-Emitter-Sperrspannung (Uce): 45
Emitter-Basis-Sperrspannung (Ueb): 5
Kollektorstrom (Ic): 0.8
Höchste Sperrschichttemperatur (Tj), °C: 150
Transitfrequenz (ft): 100
Kollektor-Kapazität (Cc), pF: 12
Kurzschluss-Stromverstärkung (hfe): 100
Transistorgehäuse: SOT23
Ersatz (vergleichstyp) für BCW68
BCW68
- PDF-Dokument zum Download bereitstellen...
1.1. bcw68glt.pdf  Size:82K _motorola  |
 | ter Breakdown Voltage (IC = –10 mAdc, IB = 0) V(BR)CEO –45 — — Vdc
Collector–Emitter Breakdown Voltage (IC = –10 µAdc, VEB = 0) V(BR)CES –60 — — Vdc
Emitter–Base Breakdown Voltage (IE = –10 µAdc, IC = 0) V(BR)EBO –5.0 — — Vdc
Collector Cutoff Current ICES
(VCE= –45 Vdc, IE = 0) — — –20 nAdc
(VCE= –45 Vdc, IB = 0, TA = 150°C) — — –10 µAdc
Emitter Cutoff Current (VEB = –4.0 Vdc, IC = 0) IEBO — — –20 nAdc
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina
The |
1.2. bcw68g.pdf Size:230K _fairchild_semi  |
 | ic Max Units
*BCW68G
PD Total Device Dissipation 350 mW
2.8
Derate above 25°C mW/°C
Thermal Resistance, Junction to Ambient 357
R?JA °C/W
*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
©1997 Fairchild Semiconductor Corporation
BCW68G
PNP General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown IC = 10 mA, IB = 0 45 V
Voltage
V(BR) |
1.3. bcw67_bcw68.pdf Size:134K _siemens  |
 | /W
Junction - soldering point Rth JS ? 215
1)
Package mounted on epoxy pcb 40 mm ? 40 mm ? 1.5 mm/6 cm2 Cu.
Semiconductor Group 2
BCW 67
BCW 68
Electrical Characteristics
at TA = 25 ?C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
DC characteristics
Collector-emitter breakdown voltage V(BR)CE0 V
IC = 10 mA
BCW 67 32 – –
BCW 68 45 – –
Collector-base breakdown voltage V(BR)CB0
IC = 10 µA
BCW 67 45 – –
BCW 68 60 – –
Emitter-base breakdown voltage, IE |
1.4. bcw67_bcw68.pdf Size:53K _diodes 1.5. bcw68glt1.pdf Size:108K _onsemi  |
 | ion PD 300 mW
M = Date Code*
Alumina Substrate (Note 2)
G = Pb-Free Package
TA = 25°C
(Note: Microdot may be in either location)
Derate above 25°C 2.4 mW/°C
*Date Code orientation and/or overbar may vary
Thermal Resistance, RqJA 417 °C/W
depending upon manufacturing location.
Junction-to-Ambient
Junction and Storage Temperature TJ, Tstg -55 to +150 °C
ORDERING INFORMATION
1. FR-5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in 99.5% alumina. Device Package Shipping†
BCW68GLT1G |
1.6. bcw68.pdf Size:216K _secos  |
 | ltage V(BR)CBO -60 V IC=-10?A, IE=0
Collector-Emitter Breakdown Voltage V(BR)CEO -45 V IC=-10mA, IB=0
Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-10?A, IC=0
Collector Cut-Off Current ICBO -0.02 ?A VCB=-45V, IE=0
Collector Cut-off Current IEBO -0.02 ?A VEB=-4V, IC=0
BCW68F 35
hFE1 BCW68G 50 VCE=-10V, IC=-0.1mA
BCW68H 80
BCW68F 75
hFE2 BCW68G 120 VCE=-1V, IC=-10mA
BCW68H 180
DC Current Gain
BCW68F 100 250
hFE3 BCW68G 160 400 VCE=-1V, IC=-100mA
BCW68H 250 630
BCW68F 35
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1.7. bcw68.pdf Size:66K _kec  |
 | UNIT
V(BR)CEO IC=-10mA, IB=0
Collector-Emitter Breakdown Voltage -45 - - V
V(BR)EBO
A, IC=0
Emitter-Base Breakdown Voltage IE=10 -5.0 - - V
VEB=0V, VCE=-45V
- - -20 nA
ICES
Collector Cut-off Current
Ta=150 , VEB=0V, VCE=-45V - - -20
A
IEBO IC=0, VEB=-4V
Emitter Cut-off Current - - -20 nA
Group F 75 - -
VCE=-1V, IC=-10mA
Group G 120 - -
Group F 100 - 250
hFE VCE=-1V, IC=-100mA
DC Current Gain
Group G 160 - 400
Group F 35 - -
VCE=-1V, IC=-500mA
Group G 60 -
IC=-100mA |
Anderen transistoren... BCW66RH
, BCW67
, BCW67A
, BCW67B
, BCW67C
, BCW67RA
, BCW67RB
, BCW67RC
, BC517
, BCW68F
, BCW68G
, BCW68H
, BCW68RF
, BCW68RG
, BCW68RH
, BCW69
, BCW69LT1
.
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