BCX69-16 . Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: BCX69-16

Werkstoff: Si

Polarity: PNP

Gesamt-Verlustleistung (Pc): 3

Kollektor-Basis-Sperrspannung (Ucb): 25

Kollektor-Emitter-Sperrspannung (Uce): 20

Emitter-Basis-Sperrspannung (Ueb): 5

Kollektorstrom (Ic): 1

Höchste Sperrschichttemperatur (Tj), °C: 150

Transitfrequenz (ft): 65

Kollektor-Kapazität (Cc), pF:

Kurzschluss-Stromverstärkung (hfe): 100

Transistorgehäuse: SP0

Ersatz (vergleichstyp) für BCX69-16

BCX69-16 - PDF-Dokument zum Download bereitstellen...

5.1. bcx69.pdf Size:145K _siemens

tor Group 1 BCX 69 Electrical Characteristics at TA = 25 ?C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC characteristics Collector-emitter breakdown voltage V(BR)CE0 20 – – V IC = 30 mA Collector-base breakdown voltage V(BR)CB0 25 – – IC = 10 µA Emitter-base breakdown voltage V(BR)EB0 5–– IE = 1 µA Collector cutoff current ICB0 VCB = 25 V – – 100 nA VCB = 25 V, TA = 150 ?C – – 100 µA Emitter cutoff current IEB0 ––10 µA VEB = 5 V DC current gain1)

5.2. cbcx68_cbcx69.pdf Size:283K _central

IEBO VEB=5.0V 10 µA BVCBO IC=10µA 25 V BVCEO IC=10mA 20 V BVEBO IE=1.0µA 5.0 V VCE(SAT) IC=1.0A, IB=100mA 0.5 V VBE(ON) VCE=10V, IC=5.0mA 0.6 V VBE(ON) VCE=1.0V, IC=1.0A 1.0 V hFE VCE=10V, IC=5.0mA 50 hFE VCE=1.0V, IC=500mA (CBCX68, CBCX69) 85 375 hFE VCE=1.0V, IC=500mA (CBCX68-16, CBCX69-16) 100 250 hFE VCE=1.0V, IC=500mA (CBCX68-25, CBCX69-25) 160 400 hFE VCE=1.0V, IC=1.0A 60 fT VCE=5.0V, IC=10mA, f=20MHz 65 MHz R10 (4-January 2010) CBCX68 SERIES NPN CBCX69 SERIES PNP SURF

5.3. bcx69.pdf Size:16K _diodes

=-5V Collector-Emitter VCE(sat) -0.5 V IC =-1A, IB =-100mA Saturation Voltage Base-Emitter Turn-On VBE(on) -1.0 V IC =-1A, VCE =-1V Voltage Static Forward Current hFE 50 IC =-5mA, VCE =-1V Transfer Ratio 85 375 IC =-500mA, VCE =-1V 60 IC =-1A, VCE =-1V* BCX69-16 100 250 IC =-500mA, VCE =-1V* BCX69-25 160 250 400 IC =-500mA, VCE =-1V Transition Frequency fT 100 MHz IC =-100mA, VCE =-5V, f=100MHz Output Capacitance Cobo 25 pF VCB =-10V, f=1MHz *Measured under pulsed conditions. Pulse

5.4. bcx69.pdf Size:410K _htsemi

-0.1 ?A DC current gain BCX69 85 375 BCX69-10 85 160 hFE (1) 1) VCE=-1V, IC=-500mA BCX69-16 100 250 BCX69-25 160 375 hFE(2) 1) VCE=-10V, IC=-5mA 50 hFE(3) 1) VCE=-1V, IC=-1A 60 Collector-emitter saturation voltage VCE(sat) IC=-1A, IB=-100mA -0.5 V IC=-5mA, VCE=-10V -0.6 Base-emitter voltage VBE(ON) 1) V IC=-1A, VCE=-1V -1 VCE=-5V, IC=-100mA Transition frequency f T 100 MHz f=20MHz 1) Pulse test: t ?=300µs, D = 2% MARKING: BCX69=CE1 BCX69-10=CF1 BCX69-16=CG1 BCX

5.5. bcx69_sot-89.pdf Size:190K _lge

IB=0 -20 V Emitter-base breakdown voltage V(BR)EBO IE=-1?A, IC=0 -5 V Collector cut-off current ICBO VCB=-25V, IE=0 -0.1 ?A Emitter cut-off current IEBO VEB=-5V, IC=0 -0.1 ?A DC current gain BCX69 85 375 BCX69-10 85 160 hFE (1) 1) VCE=-1V, IC=-500mA BCX69-16 100 250 BCX69-25 160 375 hFE(2) 1) VCE=-10V, IC=-5mA 50 hFE(3) 1) VCE=-1V, IC=-1A 60 Collector-emitter saturation voltage VCE(sat) IC=-1A, IB=-100mA -0.5 V IC=-5mA, VCE=-10V -0.6 Base-emitter voltage VBE(ON) 1) V I

Anderen transistoren... BCX60-5 , BCX60-6 , BCX68 , BCX68-10 , BCX68-16 , BCX68-25 , BCX69 , BCX69-10 , 2N3904 , BCX69-25 , BCX70 , BCX70G , BCX70GLT1 , BCX70H , BCX70J , BCX70JLT1 , BCX70K .