BCX70RK >> Datenblatt. Höchstzulässige Werte. Charakteristische Werte

Max Unit OFF CHARACTERISTICS Collector�Emitter Breakdown Voltage V(BR)CEO 45 � Vdc (IC = 2.0 mAdc, IE= 0) Emitter�Base Breakdown Voltage V(BR)EBO 5.0 � Vdc (IE = 1.0 mAdc, IC = 0) Collector Cutoff Current ICES (VCE = 32 Vdc) � 20 nAdc (VCE = 32 Vdc, TA = 150�C) � 20 mAdc Emitter Cutoff Current IEBO � 20 nAdc (VEB = 4.0 Vdc, IC = 0) 1. FR�5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. Thermal Clad is a trademark of the Bergquist Company Motorola Small�Signal Tr

5.2. bcx70_3.pdf Size:48K _philips

pen base - 45 V VEBO emitter-base voltage open collector - 5V IC collector current (DC) - 100 mA ICM peak collector current - 200 mA IBM peak base current - 200 mA Ptot total power dissipation Tamb ? 25 �C - 250 mW Tstg storage temperature -65 +150 �C Tj junction temperature - 150 �C Tamb operating ambient temperature -65 +150 �C THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 500 K/W Note 1. Transistor mounte

5.3. bcx70.pdf Size:125K _philips

PN general purpose transistors BCX70 series LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter - 45 V VCEO collector-emitter voltage open base - 45 V VEBO emitter-base voltage open collector - 5 V IC collector current (DC) - 100 mA ICM peak collector current - 200 mA IBM peak base current - 200 mA Ptot total power dissipation Tamb ? 25 �C - 250 mW Tstg storage temperatur

5.4. bcx70j.pdf Size:75K _fairchild_semi

ration Voltage IC=10mA, IB=0.25mA 0.6 0.85 V IC=50mA, IB=1.25mA 0.7 1.05 V VBE (on) Base-Emitter On Voltage IC=2.0mA, VCE=5V 0.55 0.75 V fT Current Gain Bandwidth Product IC=10mA, VCE=5V, f=100MHz 125 MHz Cob Output Capacitance VCB=10V, IE=0, f=1MHz 4.5 pF NF Noise Figure VCE=5V, IC=0.2mA 6 dB RS=2K?, f=1KHz tON Turn On Time IC=10mA, IB1=1.0mA 150 ns tOFF Turn Off Time VBB=3.6V, IB2=1.0mA 800 ns R1=R2=5K?, RL=990? Marking AJ �2002 Fairchild Semiconductor Corporation Rev. B2, December

5.5. bcx70k.pdf Size:75K _fairchild_semi

turation Voltage IC=10mA, IB=0.25mA 0.6 0.85 V IC=50mA, IB=1.25mA 0.7 1.05 V VBE (on) Base-Emitter On Voltage IC=2.0mA, VCE=5V 0.55 0.75 V fT Current Gain Bandwidth Product IC=10mA, VCE=5V, f=100MHz 125 MHz Cob Output Capacitance VCB=10V, IE=0, f=1MHz 4.5 pF NF Noise Figure VCE=5V, IC=0.2mA 6 dB RS=2K?, f=1KHz tON Turn On Time IC=10mA, IB1=1.0mA 150 ns tOFF Turn Off Time VBB=3.6V, IB2=1.0mA 800 ns R1=R2=5K?, RL=990? Marking AK �2002 Fairchild Semiconductor Corporation Rev. B2, Decemb

5.6. bcx70g.pdf Size:75K _fairchild_semi

=0.25mA 0.6 0.85 V IC=50mA, IB=1.25mA 0.7 1.05 V VBE (on) Base-Emitter On Voltage IC=2mA, VCE=5V 0.55 0.75 V fT Current Gain Bandwidth Product VCE=5V, IC=10mA 125 MHz Cob Output Capacitance VCB=10V, IE=0, f=1MHz 4.5 pF NF Noise Figure IC=0.2mA, VCE=5V 6 dB f=1KHz, RS=2K? tON Turn On Time IC=10mA, IB1=1mA 150 tOFF Turn Off Time IB2=1mA, VBB=3.6V 800 ns RL=990? R1=R2=5K? ns Marking AG �2002 Fairchild Semiconductor Corporation Rev. B2, December 2002 BCX70G Package Dimensions SOT-23

5.7. bcx70h.pdf Size:75K _fairchild_semi

ration Voltage IC=10mA, IB=0.25mA 0.6 0.85 V IC=50mA, IB=1.25mA 0.7 1.05 V VBE (on) Base-Emitter On Voltage VCE=5V, IC=2.0mA 0.55 0.75 V fT Current Gain Bandwidth Product VCE=5V, IC=10mA, f=100MHz 125 MHz Cob Output Capacitance VCE=10V, IE=0, f=1MHz 4.5 pF NF Noise Figure VCE=5V, IC=0.2mA 6 dB RS=2K?, f=1KHz tON Turn On Time IC=10mA, IB1=1.0mA 150 ns tOFF Turn Off Time VBB=3.6V, IB2=1.0mA 800 ns R1=R2=5K?, RL=990? Marking AH �2002 Fairchild Semiconductor Corporation Rev. B2, December

5.8. bcx70j.pdf Size:19K _samsung

IB=1.25mA 1.05 V 0.7 IC=2.0mA, VCE=5V Base-Emitter On Voltage VBE (on) 0.55 0.75 V IC=10mA, VCE=5V MHz Crrent Gain Bandwidth Product fT 125 Output Capacitance COB VCB=10V, IE=0 4.5 pF f=1MHz VCE=5V, IC=0.2mA Noise Figure NF 6 dB RS=2 , f=1KHz Turn On Time TON IC=10mA, IB1=1.0mA 150 ns ns Turn Off Time TOFF VBB=3.6V, IB2=1.0mA 800 R1=R2=5 , RL=990

5.9. bcx70k.pdf Size:20K _samsung

50mA, IB=1.25mA V 1.05 0.7 IC=2.0mA, VCE=5V Base-Emitter On Voltage VBE (on) V 0.55 0.75 IC=10mA, VCE=5V Crrent Gain Bandwidth Product fT MHz 125 Output Capacitance COB VCB=10V, IE=0 pF 4.5 f=1MHz VCE=5V, IC=0.2mA Noise Figure NF 6 dB RS=2 , f=1KHz Turn On Time TON IC=10mA, IB1=1.0mA ns 150 Turn Off Time TOFF VBB=3.6V, IB2=1.0mA ns 800 R1=R2=5 , RL=990

5.10. bcx70g.pdf Size:20K _samsung

ase-Emitter On Voltage VBE (on) IC=2mA, VCE=5V 0.55 0.75 V Crrent Gain Bandwidth Product fT VCE=5V, IC=10mA 125 MHz Output Capacitance COB VCB=10V, IE=0 4.5 pF f=1MHz IC=0.2mA, VCE=5V Noise Figure NF 6 dB f=1KHz, RS=2 Turn On Time TON IC=10mA, IB1=1mA 150 ns Turn Off Time TOFF IB2=1mA, VBB=3.6V 800 ns RL=990 , R1=R2=5

5.11. bcx70h.pdf Size:20K _samsung

A, IB=1.25mA 1.05 V 0.7 IC=2.0mA, VCE=5V Base-Emitter On Voltage VBE (on) 0.75 V 0.55 IC=10mA, VCE=5V Crrent Gain Bandwidth Product fT MHz 125 pF Output Capacitance COB VCE=10V, IE=0 4.5 f=1MHz VCE=5V, IC=0.2mA dB Noise Figure NF 6 RS=2 , f=1KHz ns Turn On Time TON IC=10mA, IB1=1.0mA 150 Turn Off Time TOFF VBB=3.6V, IB2=1.0mA ns 800 R1=R2=5 , RL=990

5.12. bcw60_bcx70.pdf Size:282K _siemens

= 71 ?C Ptot 330 mW Junction temperature Tj 150 ?C Storage temperature range Tstg � 65 � + 150 Thermal Resistance Junction - ambient1) Rth JA ? 310 K/W Junction - soldering point Rth JS ? 240 1) Package mounted on epoxy pcb 40 mm ? 40 mm ? 1.5 mm/6 cm2 Cu. Semiconductor Group 2 BCW 60 BCX 70 Electrical Characteristics at TA = 25 ?C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC characteristics Collector-emitter breakdown voltage V(BR)CE0 V IC = 10

5.13. bcx70j_k.pdf Size:985K _rohm

EBO 5 - - V IC= 10�A Collector-emitter cutoff current ICES - - 0.1 �A VCE= 45V Emitter-base cutoff current IEBO - - 0.1 �A VEB= 4V VCE(sat)1 - - 0.35 V IC/IB= 10mA/ 0.25mA Collector-emitter saturation voltage VCE(sat)2 - - 0.55 V IC/IB= 50mA/ 1.25mA VBE(sat)1 - - 0.85 V IC/IB= 10mA/ 0.25mA Base-emitter saturation voltage VBE(sat)2 - - 1.05 V IC/IB= 50mA/ 1.25mA Base-emitter voltage VBE(on) 0.55 - 0.75 V VCE= 5V, IC= 2mA hFE1 250 - 630 VCE= 5V, IC= 2mA DC current transfer ratio - hFE2

5.14. bcx70j.pdf Size:440K _secos

ge IC=10µA, IE =0 V(BR)CBO 45 V Collector-Emitter Breakdown Voltage IC=2mA, IB =0 V(BR)CEO 45 V Emitter-Base Breakdown Voltage IE=1µA, IC =0 V(BR)EBO 5 V Collector Cut-Off Current VCE=45V, VBE =0 ICES 20 nA VCE=5V, IC=10µA hFE1 30 DC Current Gain VCE=5V, IC=2mA hFE2 250 460 VCE=1V, IC=50mA hFE3 90 IC =10mA, IB =0.25mA VCE(sat)1 0.05 0.35 V Collector-Emitter Saturation Voltage IC =50mA, IB =1.25mA VCE(sat)2 0.1 0.55 V IC=10mA, IB=-0.25mA VBE(sat)1 0.6 0.85 V Base-Emitter Saturation

5.15. bcx70k.pdf Size:467K _secos

ge IC=10µA, IE =0 V(BR)CBO 45 V Collector-Emitter Breakdown Voltage IC=2mA, IB =0 V(BR)CEO 45 V Emitter-Base Breakdown Voltage IE=1µA, IC =0 V(BR)EBO 5 V Collector Cut-Off Current VCE=45V, VBE =0 ICES 20 nA VCE=5V, IC=10µA hFE1 100 DC Current Gain VCE=5V, IC=2mA hFE2 380 630 VCE=1V, IC=50mA hFE3 100 IC =10mA, IB =0.25mA VCE(sat)1 0.05 0.35 V Collector-Emitter Saturation Voltage IC =50mA, IB =1.25mA VCE(sat)2 0.1 0.55 V IC=10mA, IB=-0.25mA VBE(sat)1 0.6 0.85 V Base-Emitter Saturati

5.16. bcx70j.pdf Size:1100K _htsemi

,IC=2mA 380 630 hFE3 VCE=1V,IC=50mA 100 VCE(sat)1 IC= 10mA IB= 0.25 mA 0.05 0.35 V Collector-emitter saturation voltage VCE(sat)2 IC= 50mA IB=1.25 mA 0.1 0.55 V VBE(sat)1 IC= 10mA IB=-0.25 mA 0.6 0.85 V Base -emitter saturation voltage VBE(sat)2 IC= 50mA IB= 1.25 mA 0.7 1.05 V Base-emitter voltage VBE VCE=5V,IC=2mA 0.55 0.75 V Collector output capacitance Cob VCB=10V,IE=0,f=1MHz 1.7 pF VCE=5V,IC=200?A, Noise Figure NF 6 dB f=1KHz,BW=200Hz,RS=2K? Gain-Bandwidth Product fT VCE

5.17. bcx70j-k.pdf Size:400K _lge

A 100 DC current gain BCX70K hFE2 VCE=5V,IC=2mA 380 630 hFE3 VCE=1V,IC=50mA 100 VCE(sat)1 IC= 10mA IB= 0.25 mA 0.05 0.35 V Collector-emitter saturation voltage VCE(sat)2 IC= 50mA IB=1.25 mA 0.1 0.55 V VBE(sat)1 IC= 10mA IB=-0.25 mA 0.6 0.85 V Base -emitter saturation voltage VBE(sat)2 IC= 50mA IB= 1.25 mA 0.7 1.05 V Base-emitter voltage VBE VCE=5V,IC=2mA 0.55 0.75 V Collector output capacitance Cob VCB=10V,IE=0,f=1MHz 1.7 pF VCE=5V,IC=200?A, Noise Figure NF 6 dB f=1KHz,BW=200

Anderen transistoren... BCX70H , BCX70J , BCX70JLT1 , BCX70K , BCX70KLT1 , BCX70RG , BCX70RH , BCX70RJ , 9013 , BCX71 , BCX71G , BCX71H , BCX71J , BCX71K , BCX71RG , BCX71RH , BCX71RJ .


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