BCY59CP
. Höchstzulässige Werte. Charakteristische Werte. Datenblatt. Typenbezeichnung: BCY59CP
Werkstoff: Si
Polarity: NPN
Gesamt-Verlustleistung (Pc): 0.39
Kollektor-Basis-Sperrspannung (Ucb): 45
Kollektor-Emitter-Sperrspannung (Uce): 45
Emitter-Basis-Sperrspannung (Ueb): 7
Kollektorstrom (Ic): 0.1
Höchste Sperrschichttemperatur (Tj), °C: 150
Transitfrequenz (ft): 120
Kollektor-Kapazität (Cc), pF: 7
Kurzschluss-Stromverstärkung (hfe): 250
Transistorgehäuse: TO226
Ersatz (vergleichstyp) für BCY59CP
BCY59CP
PDF doc:
5.1. bcy58_bcy59_cnv_2.pdf  Size:50K _philips  |
 | DISCRETE SEMICONDUCTORS
DATA SHEET
M3D125
BCY58; BCY59
NPN switching transistors
1997 Jun 17
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
Philips Semiconductors Product specification
NPN switching transistors BCY58; BCY59
FEATURES PINNING
• Low current (max. 100 mA)
PIN DESCRIPTION
• Low voltage (max. 45 V).
1 emitter
2 base
APPLICATIONS
3 collector, connected to case
• Switching and amplification.
DESCRIPTION 3
handbook, halfpage
1
2
NPN switching transistor in a TO-18 metal package.
2
PNP complements: BCY78 and BCY79.
3
MAM264
1
Fig.1 Simplified outline (TO-18) and symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCBO collector-base voltage open emitter
BCY58 - - 32 V
BCY59 - - 45 V
VCEO collector-emitter voltage open base
BCY58 - - 32 V
BCY59 - - 45 V
IC collector current (DC) - - 100 mA
Ptot total power dissipation Tamb ? 45 °C - - 340 mW
Tcase ? 45 °C - - 1 W
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5.2. bcy59_2.pdf Size:995K _st  |
 | BCY59
®
SMALL SIGNAL NPN TRANSISTOR
DESCRIPTION
The BCY59 is a silicon Planar Epitaxial NPN
transistor in Jedec TO-18 metal case. It is
intented for use in audio input stages, driver
stages and low-noise input stages.
The PNP complementary type Is BCY79.
TO-18
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCES Collector-Emitter Voltage (VBE = 0) 45 V
VCEO Collector-Emitter Voltage (IB = 0) 45 V
VEBO Emitter-Base Voltage (IC = 0) 7 V
I Collector Current 200 mA
C
IB Base Current 50 mA
Ptot 0.39 W
Total Dissipation at T ? 25 oC
amb
1 W
at TC ? 25 oC
o
Tstg Storage Temperature -55 to 175 C
o
Tj Max. Operating Junction Temperature 175 C
1/6
September 2002
BCY59
THERMAL DATA
o
Rthj-case Thermal Resistance Junction-Case Max 150 C/W
o
R Thermal Resistance Junction-Ambient Max 384.6 C/W
thj-amb
ELECTRICAL CHARACTERISTICS (T = 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
|
5.3. bcy59.pdf Size:993K _st  |
 | BCY59
®
SMALL SIGNAL NPN TRANSISTOR
DESCRIPTION
The BCY59 is a silicon Planar Epitaxial NPN
transistor in Jedec TO-18 metal case. It is
intented for use in audio input stages, driver
stages and low-noise input stages.
The PNP complementary type Is BCY79.
TO-18
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCES Collector-Emitter Voltage (VBE = 0) 45 V
VCEO Collector-Emitter Voltage (IB = 0) 45 V
VEBO Emitter-Base Voltage (IC = 0) 7 V
I Collector Current 200 mA
C
IB Base Current 50 mA
Ptot 0.39 W
Total Dissipation at T ? 25 oC
amb
1 W
at TC ? 25 oC
o
Tstg Storage Temperature -55 to 175 C
o
Tj Max. Operating Junction Temperature 175 C
1/6
September 2002
BCY59
THERMAL DATA
o
Rthj-case Thermal Resistance Junction-Case Max 150 C/W
o
R Thermal Resistance Junction-Ambient Max 384.6 C/W
thj-amb
ELECTRICAL CHARACTERISTICS (T = 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
|
Anderen transistoren... BCY59-7
, BCY59-8
, BCY59-9
, BCY59A
, BCY59AP
, BCY59B
, BCY59BP
, BCY59C
, BC547B
, BCY59CSM
, BCY59D
, BCY59DP
, BCY59QF
, BCY65
, BCY65E
, BCY65E7
, BCY65E8
.
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