BD436B . Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: BD436B

Werkstoff: Si

Polarity: PNP

Gesamt-Verlustleistung (Pc): 36

Kollektor-Basis-Sperrspannung (Ucb): 32

Kollektor-Emitter-Sperrspannung (Uce): 32

Emitter-Basis-Sperrspannung (Ueb): 5

Kollektorstrom (Ic): 4

Höchste Sperrschichttemperatur (Tj), °C: 150

Transitfrequenz (ft): 3

Kollektor-Kapazität (Cc), pF:

Kurzschluss-Stromverstärkung (hfe): 160

Transistorgehäuse: TO126

Ersatz (vergleichstyp) für BD436B

BD436B - PDF-Dokument zum Download bereitstellen...

5.1. bd433_bd435_bd437_bd434_bd436_bd438.pdf Size:70K _st

Tj Max. Operating Junction Temperature 150 C For PNP types voltage and current values are negative. 1/4 June 1997 BD433/434/435/436/437/438 THERMAL DATA o Rthj-case Thermal Resistance Junction-case Max 3.5 C/W o Rthj-amb Thermal Resistance Junction-ambient Max 100 C/W ELECTRICAL CHARACTERISTICS (T = 25 oC unless otherwise specified) case Symbol Parameter Test Conditions Min. Typ. Max. Unit I Collector Cut-off for BD433/434 V = 22 V 100 µA CBO CB Current (IE = 0) for BD435/436 VC

5.2. bd433_bd434_bd435_bd436_bd437_bd438.pdf Size:51K _st

Tj Max. Operating Junction Temperature 150 C For PNP types voltage and current values are negative. 1/4 February 2003 BD433 BD434 BD435 BD436 BD437 BD438 THERMAL DATA o Rthj-case Thermal Resistance Junction-case Max 3.5 C/W o R Thermal Resistance Junction-ambient Max 100 C/W thj-amb ELECTRICAL CHARACTERISTICS (T = 25 oC unless otherwise specified) case Symbol Parameter Test Conditions Min. Typ. Max. Unit I Collector Cut-off for BD433/434 V = 22 V 100 µA CBO CB Current (IE = 0

5.3. bd434_bd436_bd438.pdf Size:42K _fairchild_semi

e : BD434 IC = - 100mA, IB = 0 - 22 V : BD436 - 32 V : BD438 - 45 V ICBO Collector Cut-off Current VCB = - 22V, IE = 0 : BD434 VCB = - 32V, IE = 0 - 100 µA : BD436 VCB = - 45V, IE = 0 - 100 µA : BD438 - 100 µA ICEO Collector Cut-off Current : BD434 VCE = - 22V, VBE = 0 - 100 µA : BD436 VCE = - 32V, VBE = 0 - 100 µA : BD438 VCE = - 45V, VBE = 0 - 100 µA IEBO Emitter Cut-off Current - 1 mA VEB = - 5V, IC = 0 hFE * DC Current Gain : BD434/436 VCE = - 5V, IC = - 10mA 40 140 :

5.4. bd434_bd436_bd438.pdf Size:13K _samsung

= 0 - 100 uA : BD438 VCB = - 45V, IE = 0 - 100 uA Collector Cutoff Current : BD434 ICEO VCE = - 22V, VBE = 0 - 100 uA : BD436 VCE = - 32V, VBE = 0 - 100 uA : BD438 VCE = - 45V, VBE = 0 - 100 uA Emitter Cutoff Current IEBO VEB = - 5V, IC = 0 - 1 mA *DC Current Gain : BD434/436 hFE VCE = - 5V, IC = - 10mA 40 140 : BD438 30 140 : ALL DEVICE VCE = - 1V, IC = - 500mA 85 140 : BD434/436 VCE = - 1V, IC = - 2A 50 : BD438 40 * Collector Emitter Saturation Voltage : BD434 VCE(sat) IC = -

5.5. bd436_bd438_bd440_bd442.pdf Size:58K _onsemi

ING INFORMATION IIIIIIIIIIIIIIIIIII Characteristic Symbol Max Unit Device Package Shipping Thermal Resistance, Junction-to-Case qJC 3.5 °C/W BD436 TO-225AA 500 Units/Box Maximum ratings are those values beyond which device damage can occur. BD436G TO-225AA 500 Units/Box Maximum ratings applied to the device are individual stress limit values (not (Pb-Free) normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not im

Anderen transistoren... BD435A , BD435B , BD435C , BD436 , BD436-10 , BD436-16 , BD436-25 , BD436A , 2N3055 , BD436C , BD437 , BD438 , BD439 , BD440 , BD441 , BD442 , BD443 .