BD441 . Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: BD441

Werkstoff: Si

Polarity: NPN

Gesamt-Verlustleistung (Pc): 36

Kollektor-Basis-Sperrspannung (Ucb): 80

Kollektor-Emitter-Sperrspannung (Uce): 80

Emitter-Basis-Sperrspannung (Ueb): 5

Kollektorstrom (Ic): 4

Höchste Sperrschichttemperatur (Tj), °C: 150

Transitfrequenz (ft): 3

Kollektor-Kapazität (Cc), pF:

Kurzschluss-Stromverstärkung (hfe): 15

Transistorgehäuse: TO126

Ersatz (vergleichstyp) für BD441

BD441 - PDF-Dokument zum Download bereitstellen...

1.1. bd437_bd441.pdf Size:106K _motorola

IIIII IIII Collector–Base Voltage BD437 VCBO IIIIIIII Vdc 45 IIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIIIIIIII IIIIIIII IIIIIII IIII IIIIIII IIII IIIIIII IIII IIIIIIIIIIIIIIIIII IIII IIIIIII BD441 80 IIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIIIIIIII IIIIIIII IIIIIII IIII IIIIIII IIII IIIIIII IIII IIIIIII IIII Emitter–Base Voltage VEBO 5.0 Vdc IIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIIIIIIII IIIIIIII

1.2. bd439_bd440_bd441_bd442.pdf Size:69K _st

BD439/BD440/BD441/BD442 THERMAL DATA o Rthj-case Thermal Resistance Junction-case Max 3.5 C/W o Rthj-amb Thermal Resistance Junction-ambient Max 100 C/W ELECTRICAL CHARACTERISTICS (T = 25 oC unless otherwise specified) case Symbol Parameter Test Conditions Min. Typ. Max. Unit I Collector Cut-off for BD439/440 V = 60 V 100 µA CBO CB Current (IE = 0) for BD441/442 VCB = 80 V 100 µA I Collector Cut-off for BD439/440 V = 60 V 100 µA CES CB Current (VBE = 0) for BD441/442 VCB = 80 V 1

1.3. bd439_bd441.pdf Size:41K _fairchild_semi

S Collector Cut-off Current : BD439 VCE = 60V, VBE = 0 100 µA : BD441 VCE = 80V, VBE = 0 100 µA IEBO Emitter Cut-off Current VEB = 5V, IC = 0 1 mA hFE * DC Current Gain : BD439 VCE = 5V, IC = 10mA 20 130 : BD441 15 130 : BD439 VCE =1V, IC = 500mA 40 140 : BD441 40 140 : BD439 VCE = 1V, IC = 2A 25 : BD441 15 VCE(sat) * Collector-Emitter Saturation Voltage IC = 2A, IB = 0.2A 0.8 V VBE(on) * Base-Emitter ON Voltage VCE = 5V, IC = 10mA 0.58 V VCE = 1V, IC = 2A 1.5 V fT Curren

1.4. bd439_bd441.pdf Size:57K _samsung

uA : BD441 VCE = 80V, VBE = 0 100 uA Emitter Cutoff Current IEBO VEB = 5V, IC = 0 1 mA *DC Current Gain : BD439 hFE VCE = 5V, IC = 10mA 20 130 : BD441 15 130 : BD439 VCE =1V, IC = 500mA 40 140 : BD441 40 140 : BD439 VCE = 1V, IC = 2A 25 : BD441 15 * Collector Emitter Saturation Voltage VCE(sat) IC = 2A, IB = 0.2A 0.8 V *Base Emitter On Voltage VBE(on) VCE = 5V, IC = 10mA V 0.58 VCE = 1V, IC = 2A 1.5 V Transition Frequency fT VCE = 1V, IC = 250mA MHz 3 Pulse Test : PW=300

1.5. bd435_bd437_bd439_bd441.pdf Size:59K _onsemi

IC 4.0 Adc IIIIIIIIIII IIII IIIIIIIIIII IIII IIII III IIII III Base Current IB 1.0 Adc IIIIIIIIIII IIII IIIIIIIIIII IIII IIII III IIII III BD4xx = Device Code Total Device Dissipation @ TC = 25°C PD 36 W IIIIIIIIIII IIII IIIIIIIIIII IIII xx = 35, 37, 37T, 39, 41 IIII III IIII III Derate above 25°C 288 W/°C Y = Year IIIIIIIIIII IIII IIII III IIIIIIIIIII IIII IIII III Operating and Storage Junction TJ, Tstg –55 to +150 °C WW = Work Week Temperature Range G = Pb-Free Packag

1.6. bd439_bd441.pdf Size:117K _inchange_semiconductor

Anderen transistoren... BD436-25 , BD436A , BD436B , BD436C , BD437 , BD438 , BD439 , BD440 , BD139 , BD442 , BD443 , BD443A , BD450 , BD451 , BD461 , BD462 , BD463 .